Stripline Packaged Silicon Schottky Mixer Diodes 213 Description Three families of stripline packaged mixer diodes are offered in a wide range of packages. These diodes have low noise figure through 26 GHz. The three families are: Low Barrier diodes for minimum LO drive. Medium Barrier diodes for normal LO drive. High Barrier diodes for maximum dynamic range and upconverters. Features lM LARGE CHOICE OF AVAILABLE PACKAGES @ UNIFORM RF CHARACTERISTICS mM SCREENING TO JANTXV LEVEL AVAILABLE @ LOW, MEDIUM AND HIGH BARRIER DIODES Applications Stripline and microstrip mixers from 100 MHz. Upconverters. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 201Stripline Packaged Silicon Schottky Mixer Diodes Stripline Packaged Silicon Schottky Mixer Diodes These stripline packaged Schottky barrier mixer diodes are suitable for use in stripline and microstrip mixers. Each family of diodes is listed by barrier height, increasing frequency capability, and grouped according to package style and noise figure. The forward I-V characteristics of Schottky diodes are dependent on the barrier voltage of the metal. The barrier Specifications @ T, = 25C Low Barrier Stripline Packaged Schottky Diodes Low barrier diodes normally are most satisfactory for use in balanced mixers where the local oscillator drive level is between 0.5 dBM and +3 dBM per diode. voltage affects the local oscillator requirement for optimum RF performances. M/A-COM Semiconductor Products Inc., offers low, medium and high barrier Schottky mixer diodes. Electrical characteristics and packaging other than the standard specifications listed, are available upon request at nominal charge. For more information, contact the factory. Maximum? Maximum Z\F Range Model! Test Frequency | Noise Frequency SWR Min./Max. Number Case Style? (GHz) (dB) (Volts) (Ohms) MA40033 137 6.000 5.5 1.5 200-500 MA40034 137 6.000 6.0 1.5 200-500 MA40035 137 6.000 7.0 2.0 200-500 MA40036 213 6.000 5.5 1.5 200-500 MA40037 213 6.000 6.0 2.0 200-500 MA40038 213 9.375 7.0 15 200-500 MA40080 137 9.375 6.0 1.5 200-500 MA40078 137 9.375 6.5 1.5 250-450 MA40076 137 9.375 7.0 2.0 250-450 MA40126 186 9.375 6.0 1.5 250-450 MA40127 186 9.375 6.5 2.0 250-450 MA40128 186 9.375 7.0 1.5 250-450 MA40083 213 9.375 6.0 1.5 250-450 MA40079 213 9.375 6.5 1.5 200-500 MA40077 213 9.375 7.0 2.0 200-500 MA40105-276 276 9.375 6.0 1.5 250-450 MA40106-276 276 9.375 6.5 1.5 250-450 MA40107-276 276 9.375 7.0 2.0 250-450 MA40115-276 276 16.000 6.5 2.0 250-450 MA40116-276 276 16.000 7.0 2.0 250-450 MA4E911-276 276 24.000 8.0 2.0 200-500 MA4E914-276 276 24.000 7.5 1.5 200-500 M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 202Stripline Packaged Silicon Schottky Mixer Diodes Specifications (Contd) Medium Barrier Stripline Schottky Diodes Medium barrier diodes are normally most satisfactory for use in balanced mixers where the local oscillator drive level is between +0 dBM and +10 dBM per diode. Maximum? Maximum ZF Range Modelt Case? Test Frequency Noise Figure SWR Min./Max. Number Style (GHz) (dB) (Volts) (Ohms) MA40032 137 6.000 5.5 1.5 200-500 MA40031 137 6.000 6.0 15 200-500 MA40030 137 6.000 7.0 15 200-500 MA40048 213 6.000 5.5 1.5 200-500 MA40047 213 6.000 6.0 1.5 200-500 MA40046 213 6.000 7.0 1.5 200-500 MA40088 137 9.375 6.0 1.5 200-500 MA40086 137 9.375 6.5 1.5 200-500 MA40084 137 9.375 7.0 2.0 200-500 MA40176 186 9.375 6.0 1.5 250-450 MA40177 186 9.375 6.5 1.5 250-450 MA40178 186 9.375 7.0 2.0 250-450 MA40089 213 9.375 6.0 1.5 200-500 MA40087 213 9.375 6.5 1.5 200-500 MA40085 213 9.375 7.0 2.0 200-500 MA40155-276 276 9.375 6.0 1.5 250-450 MA40156-276 276 9.375 6.5 1.5 250-450 MA40157-276 276 9.375 7.0 2.0 250-450 MA40165-276 276 16.000 6.5 1.5 250-450 MA40166-276 276 16.000 7.0 2.0 250-450 MA4E920-276 276 24.000 7.5 1.5 200-500 MA4E917-276 276 24.000 8.0 2.0 200-500 MAXIMUM RATINGS TEMPERATURE RANGE Operating (case style 186, 276) - 65C to + 150C (case style 137, 213) -65C to +125C Storage (case style 186, 276) - 65C to + 150C (case style 137, 213) -65C to + 125C INCIDENT POWER RATINGS Maximum Peak RF Incident Power C-X Band 1 Watt for 1 microsecond maximum Ku-K Band 0.5 Watt for 1 microsecond maximum Maximum CW RAF Incident Power C-X Band 150 mW Ku-K Band 100 mW SOLDER TEMPERATURE RATINGS (case style 137, 213) 200C for 5 seconds, 1 mm from package (case style 186, 276) 225C for 5 seconds, 1 mm from package M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 203Stripline Packaged Silicon Schottky Mixer Diodes Specifications (Contd) High Barrier Stripline Schottky Diodes High barrier diodes are normally most satisfactory for use in balanced mixers where the local oscillator drive level is between +6 dBM and +15 dBM per diode. Maximum? Maximum ZiF Range Model! Test Frequency Noise Figure SWR Min./Max. Number Case Style? (GHz) (dB (Volts) (Ohms) MA40045 137 6.000 6.5 1.5 200-500 MA40044 137 6.000 6.0 1.5 200-500 MA40039 137 6.000 7.0 2.0 200-500 MA40060 213 6.000 5.5 1.5 200-500 MA40057 213 6.000 6.0 1.5 200-500 MA40056 213 6.000 7.0 2.0 200-500 MA40095 137 9.375 6.0 1.5 250-450 MA40093 137 9.375 6.5 1.5 250-450 MA40091 137 9.375 7.0 2.0 250-450 MA4E197 186 9.375 6.0 1.5 250-450 MA4E198 186 9.375 6.5 1.5 250-450 MA4E199 186 9.375 7.0 2.0 250-450 MA40096 213 9.375 6.0 1.5 250-450 MA40094 213 9.375 6.5 1.5 250-450 MA40092 213 9.375 7.0 2.0 250-450 MA4E 185-276 276 9.375 6.0 1.5 250-450 MA4E 186-276 276 9.375 6.5 1.5 250-450 MA4E 187-276 276 9.375 7.0 2.0 250-450 MA4E190-276 276 16.000 6.5 1.5 250-450 MA4E191-276 276 16.000 7.0 2.0 250-450 MA4E926-276 276 24.000 75 1.5 200-500 MA4E923-276 276 24.000 8.0 2.0 200-500 NOTES: 1. All mixer diodes are available as matched pairs and can be ordered by 4. SWR for low and medium barrier diodes is tested at LO power of 1.0 mW. adding the suffix M to the diode model number. Bin matching is High barrier diodes are tested at a LO power level of 2.0 mW. available upon request. The matching criteria is as follows: RL = 22 ohms. Nf = 0.3 dB maximum Zif = 25 ohms maximum 5. IF impedance is measured by modulating the specified test frequency with 2, The maximum solder temperature is 230C for 5 seconds. Case styles a 1000 Hz signal. RL = 22 ohms. Low and medium barrier diodes are other than those indicated are available on request. Consult the factory. tested at an incident power level of 1.0 mW. High barrier diodes are tested 3. Test conditions for noise figure: at an incident power level of 2.0 mW. PLO = 1 mW (for low and medium barrier) PLO = 2 mW (for high barrier) Fip = 30 MHz N + 1.5 dB (minimum) RL = 22 ohms oO Case Styles } Oo 135 137 - os ee IIL aoe COLL J 186 213 276 M/A-COM, Inc. BE 43 South Ave, Burlington, MA 01803 gg 800-366-2266 204Stripline Packaged Silicon Schottky Mixer Diodes og: . Specifications (Contd) All stripline packaged silicon Schottky mixer diodes can be screened to TX or TXV levels. SCREENED DIODES MIL-STD-19500 INSPECTION Internal Visual High Temperature Life (stabilization bake) Thermal Shock Constant Acceleration Fine Leak Gross Leak Electrical HTRB Pre Burn-in Electrical Burn-in Final Electricals and Delta PDA NOTE: METHOD (MIL-STD-750) CONDITION 2073 See nate 1032 T = 24 hours, Ta = 150C 1051 2006 20,000 g's, Y1 direction 1071 H 1071 CorE See note 1038 See note 1038 Condition B, Ta = + 25C, Ipk = 10 mA, T = 96 hours minimum See note Less than 10% 4. Conditions and details of tast depend on the specific model number. Information available from the factory on request. Typical Performance Curves 20 cycles ~ 65C to + 125C, T extreme >10 minutes Ta = +150C, Vr = 80% Vp, T = 48 hours minimum 3mA 9.0 TIMI ToT TTT ry 10.0 | ow BARRIER- rowsarRieR | [ITT hh oY Bs 3 M4 | MEDIUM BARRIER z amA | 2 g0 Lui tt 902 MEDIUM BARRIER ~ 8! ce Tt geo rot ot | ft N N HIGH | Y m HIGH BARRIER+ | oO K BARRIER| YJ nm 1mA w 7.0 1 80 9 A LN 5 3 NONI a ww Ke 4 0 a % 6.0 1 = 70 > oe wi 2 3 a 5 102A @ 5.0 6.0 ue x w x 20uA 4.0/-LO FREQ = 9.375 GHz, 16.0 GHz 50 a I IF FREQ = 30 MHz g 2 NF). = 1508 30uA 3.0 arrears 4.0 -6 -5 -4 -3 -2 -1 0 020406 08 01 050.1 05 1.0 5.0100 VOLTS LO POWER (mw) FIGURE 1. Nominal |-V Characteristics and Barrier FIGURE 2. Nominal Schottky Barrier Noise Figure vs. Heights for Schottky Mixer Diodes LO Power 7.0 1200 7 T T 7 t tF = 30 MHz wes BARRIER N, = 1.5 0B _ 1000 1 R, = 22 OHMS a 1 a &5 = \ 4 MEDIUM BARRIER 3 5 goof +} 1 { e wy \ F, 7 9.375 GHz 2 \ = 60 a 600 Rh AY R, =1000HMS J ua ~ Ou w 4, MOUNT = JD-2967 a = pan 3 = 400 = - z 55 w ML , 7 LOW BARRIER 200 5.0 0 1 3 5 7 9 1113 15 17 A 2 5 10 20 5.0 10.0 FIGURE 3. Nominal Noise Figure vs. Frequency FREQUENCY (GHz) Drive LOCAL OSCILLATOR POWER (niW) FIGURE 4. Nominal IF Impedance vs. Local! Oscillator M/A-COM, Inc. 43 South Ave, Burlington, MA 01803 800-366-2266 205