9-1
UPF19060
60W, 2 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for
CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.
• ALL GOLD metal system for highest reliability
• Industry standard package
• Suggested alternative to the MRF19060
• Internally matched for repeatable manufacturing
• High gain, high efficiency and high linearity
GSM: 60 Watts 11.8 dB
EDGE: 25 Watts 11.8 dB
IS95 CDMA: 7.5 Watts 11.8 dB
W-CDMA: 5 Watts 11.8 dB
Application Specific Performance, 1.96 GHz
9
•Typical CDMA Performance: 1960 MHz, 26 Volts
IS-95 CDMA:
Pilot, Sync, Paging, Traffic Codes 8 through 13
Output Power–7.5W
Associated PAE – 18 %
Power Gain – 11.8 dB
• Adjacent Channel Power-
885 kHz -45dBc at 30kHz BW
1.25 MHz –55 dBc at 12.5kHz BW
2.25 MHz -55 dBc at 1MHz BW
Package Type 440117
Package Type 440133
™
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UPF19060
9
Electrical DC Characteristics (TC=25°C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Drain to Source Breakdown Voltage BVDSS 65 - - Volts
(VGS=0, ID=1mA)
Drain to Source Leakage current IDSS - - 2.0 mA
(VDS=28V, VGS=0)
Gate to Source Leakage current IGSS --2.0µA
(VGS=15V, VDS=0)
Threshold Voltage VGS(th) - 3.5 - Volts
(VDS=10V, ID=1mA)
Gate Quiescent Voltage VGS(Q)3.0 4.0 5.0 Volts
(VDS=26 V, ID=540mA)
Drain to Source On Voltage VDS(on) - 0.14 0.25 Volts
(VGS=10V, ID=1A)
Forward Transconductance Gm2.2 3.0 - S
(VDS=10V, ID=5A)
Maximum Ratings
Rating Symbol Value Unit
Drain to Source Voltage, VDSS 65 Volts
Gate connected to Source
Gate to Source Voltage VGSS +15 to -0.5 Volts
Total Device Dissipation @ TC = 70°C PD100 Watts
Derate above 70°C 0.83 W/°C
Storage Temperature Range TSTG -65 to +150 °C
Operating Junction Temperature TJ200 °C
Thermal Characteristics
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction to Case ΘJC 1.2 °C/W
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UPF19060
9
AC Characteristics (TC=25°C unless otherwise specified)
Rating Symbol Min Typ Max Unit
Output Capacitance* COSS -70-pF
(VDS=26V, VGS=0V, freq= 1MHz)
Feedback Capacitance CRSS -3.5-pF
(VDS=26V, VGS=0V, freq= 1MHz)
RF and Functional Tests (TC=25°C unless otherwise specified, UltraRF Broadband Fixture)
Rating Symbol Min Typ Max Unit
CW Common-Source Amplifier GPS 11 11.8 - dB
Power Gain
VDD=26V, IDQ=500mA, POUT=60W
Freq=1990 MHz
CW Drain Efficiency η39 42 - %
VDD=26V, POUT=60W, IDQ=500mA
Freq=1990 MHz
3rd Order Intermodulation Distortion IMD3- -30 -26 dBc
VDD=26V, POUT=60W PEP, IDQ=500mA
f1=1930 MHz and 1990MHz, Tone
Spacing = 100kHz
Input Return Loss IRL - -10 - dB
VDD=26V, POUT=60W, CW IDQ=500mA
Freq=1990 MHz
Load Mismatch Tolerance VSWR 10:1 - -
VDS=26V, IDQ= 500 mA, POUT=60W,
f=1990 MHz
* Part is internally matched on input.
CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
™
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UPF19060
9
Power Output (CW) Vs Drain Efficiency & Power Gain
10
11
12
13
14
15
4.0 5.0 6.3 7.9 10.0 12.6 15.8 20.0 25.1 31.6 39.8 50.1 63.1 79.4
Pout (W)
Gp (dB)
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
D_Eff (%)
Gp(dB)
Eff(%)
Test conditions: Vdd=26V, Idq=.5A, Freq=1990 MH
z
Power Output (CDMA IS-95) Vs ACPR, Power Gain & Efficiency
-70
-65
-60
-55
-50
-45
-40
-35
-30
4 8 12 16 20 24
Pout (W, AVG)
ACPR (dBc)
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
D_Eff(%)/Gp(dB)
885KHz
1.25MHz
2.25MHz
Eff(%)
Gp (dB)
Test conditions: Vdd=26V, Idq=.5A, Freq=1990 MHz
CDMA(IS-95): Pilot, Sync,Paging, Traffic Codes 8 through 13
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UPF19060
9
Power Ouput (W-CDMA) Vs ACPR, Drain Efficiency & Power Gain
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
2.5 3.2 4.0 5.0 6.3 7.9 10.0 12.6 15.8 20.0 25.1 31.6 39.8 50.1
Pout (W, AVG W-CDMA)
ACPR(dBc)
0.0
10.0
20.0
30.0
40.0
50.0
Gp(dB)/D_Eff(%)
5MHz
10MHz
D_Eff(%)
Gp (dB)
Test conditions:
Vdd=26V, Idq=.5A, Freq=1960 MHz
W-CDMA(3GPP): 64 DPCH
Channel Bandwidth:3.84MHz
Offset: 5MHz & 10MHz; 3.84MHz Itg BW
Power Output (CDMA IS-95) Vs ACPR, Power Gain & Efficiency
-70
-65
-60
-55
-50
-45
-40
-35
-30
4 8 12 16 20 24
Pout (W, AVG)
ACPR (dBc)
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
D_Eff(%)/Gp(dB)
885KHz
1.25MHz
2.25MHz
Eff(%)
Gp (dB)
Test conditions: Vdd=26V, Idq=.5A, Freq=1990 MHz
CDMA(IS-95): Pilot, Sync,Paging, Traffic Codes 8 through 13
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UPF19060
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Power Output (EDGE) Vs ACP & EVM
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
5 6 8 1013162025324050
Pout (W, Avg. EDGE)
ACP (dBC)
0
1
2
3
4
5
6
7
8
9
10
EVMrms (%)
400KHz
600KHz
EVMrms(%)
Test conditions: Vdd=26V, Idq=.5A, Freq=1990 MHz
Modulation: EDGE
Power Output (EDGE) Vs EVM, Drain Efficiency & Power Gain
0
1
2
3
4
5
6
7
8
9
10
5 6 8 1013162025324050
Pout (W, AVG EDGE)
EVMrms (%)
0
5
10
15
20
25
30
35
40
45
D_Eff (%)/Gp(dB)
EVM(%)
Gp (dB)
D_Eff(%)
Test conditions: Vdd=26V, Idq=.5A, Freq=1990 MHz
Modulation: EDGE
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UPF19060
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™
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UPF19060
9
Parts List for RF Test Fixture 538399
(Tuned for 1930-1990 MHz, 60W, CW)
Designator Description Qty
R2 RES,1/16W,0603,1%,383 OHMS 1
R4 RES,1/16W,0603,1%,42.2 OHMS 1
R3 RES,1/16W,0603,1%,536 OHMS 1
R6,7,8 RES,1/16W,0603,1%,549 OHMS 3
R1 POTENTIOMETER,1K OHM,PANEL MT 1
C21, C23 CAP .1UF 1206 SMT MONO 50V 2
C4 CAP, 10uf 16V TANTALUM 1
C55, C56 CAP LOW ESR 390UF 35V 2
C50 CAP 0.5PF ATC100 110MIL 1
C53 TRIM CAP 0.6-4.5 PF 1
C51,52 CAP 10PF ATC100 110MIL 2
C7,8,17,18 CAP,100 PF,0603 PKG, 100 VOLTS 4
C6,19,20 CAP,1000 PF,0603 PKG,100 VOLTS 3
C9,10,15,16,22,24,25 CAP,15 PF,0603 PKG, 100 VOLTS 7
D1 DIODE,ZENER,6.2V,SOT-23,SMT 1
Q1 PNP DARL XSTR,MMBTA64,SOT-23 1
L3 WIRE MAGNET #18 1.3 in., 0.44 in ID, 0.5 turn 1
L2 IND 18.5NH SPG,AIR CORE SMT A 1
J1 DC Connector HEADER RT>PLZ .1CEN LK 9POS 1
J2,3 RF Connector CONN,N,FEM,W/.500 SMA FLNG 2
PCB PTFE .031, 2oz/2oz CU, Er=2.55 1
Z1 55Ω, λ=.139 @1990MHz
Z2 55Ω, λ=.0269 @1990MHz
Z3 55Ω, λ=.0942 @1990MHz
Z4 35.5Ω, λ=.038 @1990MHz
Z5 44.2Ω, λ=.022 @1990MHz
Z6 25.5Ω, λ=.062 @1990MHz
Z7 9Ω, λ=.023 @1990MHz
Z8 7.1Ω, λ=.140 @1990MHz
Z9 5.9Ω, λ=.118@1990MHz
Z10 11.3Ω, λ=.040 @1990MHz
Z11 25Ω, λ=.047 @1990MHz
Z12 17.7Ω, λ=.026 @1990MHz
Z13 35.3Ω, λ=.120 @1990MHz
Z14 52.5Ω, λ=.0345 @1990MHz
Z15 52.5Ω, λ=.085 @1990MHz
Z16 52.5Ω, λ=.058 @1990MHz
™
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UPF19060
9
™
3
2
1
1.52 REF0.060 REFU
NOTES:
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
1. DIMENSIONING AND TOLERANCING PER
18.92 19.94
27.81 28.07
9.25 9.50
3.12 3.38
19.63 19.99
4.32 5.33
.08 .15
1.45 1.70
.89 1.14
12.57 12.83
3.43 3.78
9.919.65
MILLIMETERS
33.91
MIN
34.16
MAX
45fl REF
3
R 0.3740.364
1.095
0.745
1.105
0.785
S
T
R
4X RAD U
M
J
H E
B
0.123 0.133
0.773 0.787
45fl REF
0.170 0.210
0.003 0.006
0.057 0.067
0.035 0.045
0.495 0.505
0.135 0.149
0.3900.380
PIN 3. SOURCE
PIN 2. GATE
PIN 1. DRAIN
P
N
M
K
J
H
E
D
C
B
A
DIM
1.345
MAX
1.335
MIN
INCHES
2X K
2X P
T
N
C
2X D
S
A
2
1
P
3
2
1
P 19.940.7850.745 18.92
3
A
2X K
2
1
B
.15
5.33
9.50
MIN
20.45
INCHES
MIN
0.805
MAX
0.815
3.43
12.57
.89
1.45
.08
4.32
19.63
9.25
0.135
0.495
0.035
0.057
0.003
0.170
45fl REF
0.773
0.364
0.149
0.505
0.045
0.067
0.006
0.210
0.787
0.374
0.380 0.390 9.65
A
C
D
H
J
E
K
N
M
R
B
DIM
ANSI Y14.5M, 1982.
NOTES:
PIN 2. GATE
PIN 3. SOURCE
C
PIN 1. DRAIN
45fl REF
MAX
20.70
MILLIMETERS
9.91
3.78
12.83
1.14
1.70
19.99
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
M
N
2X D
E
R
J
H
9-10
UPF19060
9
™
