2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–79 March 1, 2000-10
FEATURES
• CTR Minimum at
I
F
= 1.0 mA
H11B1, 500%
H11B2, 200%
H11B3, 100%
• Isolation Test Voltage, 5300 V
RMS
• Coupling Capacitance, 0.5 pF
• Underwriters Lab File #E52744
• VDE Approval #0884 (Available with
Option 1)
DESCRIPTION
The H11B1/H11B2/H11B3 are industry standard
optocouplers, consisting of a Gallium Arsenide
infrared LED and a silicon phototdarlington.
These optocouplers are constructed with a high
voltage insulation, double molded packaging
process which offers 7.5 kV withstand test capa-
bility.
Maximum Ratings
Emitter
Reverse Voltage ........................................... 3.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
°
C....................... 100 mW
Derate Linearly from 25
°
C ................. 1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage, BV
CEO
25 V
Emitter-Collector Breakdown Voltage, BV
ECO
7.0 V
Collector-Base Breakdown Voltage, BV
CBO
.... 30 V
Collector-Current (Continuous)................. 100 mA
Power Dissipation at 25
°
C....................... 150 mW
Derate Linearly from 25
°
C ................... 2.0 mW/
°
C
Package
Isolation Test Voltage (between
emitter and detector, refer
to standard climate 23
°
C/50%RH,
DIN 50014)....................................... 5300 V
RMS
Creepage.................................................
≥
7.0 mm
Clearance ................................................
≥
7.0 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1.....................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C..............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................
≥
10
11
Ω
Total Package Dissipation at 25
°
C
(LED plus Detector) ............................. 260 mW
Derate Linearly from 25
°
C ................... 3.5 mW/
°
C
Storage Temperature.................. -55
°
C to +150
°
C
Operating Temperature ............. –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ..................10 sec.
V
DE
Characteristics,
T
A
=25
°
C
Parameter Sym. Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
H11B1, B2
H11B3
V
F
— 1.1 1.5 V
I
F
=10 mA
I
F
=50 mA
Reverse Current
I
R
—10
µ
A
V
R
=3.0 V
Junction Capacitance
C
J
50 — pF
V
F
=0 V, f=1.0 mHz
Detector
BV
CEO
—30——V
I
C
=1.0 mA,
I
F
=0 mA
BV
ECO
7.0
I
E
=100
µ
A,
I
F
=0 mA
BV
CBO
30
I
C
=100
µ
A,
I
F
=0 mA
I
CEO
— 100 nA
V
CE
=10 V,
I
F
=0 mA
Package
V
CEsat
— — — 1.0 —
I
C
=1.0 mA,
I
C
=1.0 mA
DC Current Transfer
Ratio
H11B1
H11B2
H11B3
CTR
500
200
100
—%
V
CE
=5.0 V,
I
F
=1.0 mA
Capacitance Input
to Output
C
IO
— 0.5 — pF —
Switching Times
t
on
— 5.0
µ
s
I
F
=5.0 mA
V
CE
=10 V
R
L
=100
Ω
t
off
—30
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
H11B1/H11B2/H11B3
Photodarlington
Optocoupler
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA H11B1/2/3
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–80 March 1, 2000-10
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and
saturated CTR
ce
versus LED current
Figure 3. Normalized non-saturated and
saturated Ice versus LED current
Figure 4. Normalized non-saturated and saturated
collector-emitter current versus LED current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°C
Ta = 25°C
Ta = 85°
C
100
101.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF - LED Current - mA
NCTRce - Normalized CTRce
Vce = 1 V
Vce = 5 V
Normalized to:
Ta = 25°C
Vce = 5
V
IF = 1 mA
100101.1
.01
.1
1
10
100 Vce = 5
V
Vce = 1
V
IF - LED Current - mA
NIce - Normalized Ice
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 2 mA
100
101.1
.001
.01
.1
1
1
0
Vce = 1V
Vce = 5
V
IF - LED Current - mA
NIce - Normalized Ice
Ta = 25°C
IF = 10 mA
Vce = 5 V
Normalized to:
Figure 5. Non-saturated and saturated HFE
versus base current
Figure 6. Low to high propagation delay versus
collector load resistance and LED current
Figure 7. High to low propagation delay versus
collector load resistance and LED current
Figure 8. Switching waveform and schematic
.01 .1 1 10 100
0
2000
4000
6000
8000
10000
Vce = 5 V
Vce = 1 V
Ib - Base Current - µA
HFE - Forward Transfer Gain
Ta = 25°C
0 5 10 15 20
0
2
0
4
0
6
0
8
0
Ta = 25°C, Vcc = 5
V
Vth = 1.5 V
220Ω
470Ω
1KΩ
IF - LED Current - mA
tpLH - Low/High Propagation
Delay - µs
100Ω
0 5 10 15 20
0
5
10
15
20
100Ω
1KΩ
IF - LED Current - mA
tpHL - High/Low Propagation
delay - µs
T
a = 25°C
V
cc = 5 V
V
th = 1.5 V
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
VO
RL
VCC=10 V
F=10 KHz,
DF=50%
IF=5 mA