DMC3021LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q2 30V Q1 -30V Features RDS(ON) max ID Max TA = +25C 21m @ VGS = 10V 8.5A 32m @ VGS = 4.5V 7.2A 39m @ VGS = -10V -7A 53m @ VGS = -4.5V -5.6A Description Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (DMC3021LSDQ) This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Power Management Functions Analog Switch Load Switch Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.072 grams (Approximate) SO-8 S2 D2 G2 D2 S1 D1 G1 D1 D2 G2 G1 S2 Top View Top View D1 N-Channel MOSFET S1 P-Channel MOSFET Ordering Information (Note 4) Part Number DMC3021LSD-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 8 5 = Manufacturer's Marking C3021LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 20 = 2020) WW = Week (01 to 53) C3021LD YY WW 1 DMC3021LSD Document number: DS32152 Rev. 4 - 2 4 1 of 9 www.diodes.com February 2020 (c) Diodes Incorporated DMC3021LSD Maximum Ratings N-CHANNEL - Q2 (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value 30 20 Unit V V ID 8.5 7.1 A IDM 40 A Value -30 20 Unit V V ID -7.0 -4.5 A IDM -30 A Symbol Value 2.5 Unit W 50 C/W -55 to +150 C Drain-Source Voltage Gate-Source Voltage VDSS VGSS Steady State Continuous Drain Current (Note 5) TA = +25C TA = +85C Pulsed Drain Current (Note 6) Maximum Ratings P-CHANNEL - Q1 (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS TA = +25C TA = +85C Steady State Continuous Drain Current (Note 5) Pulsed Drain Current (Note 6) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) PD RJA Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range TJ, TSTG Electrical Characteristics N-CHANNEL - Q2 (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ BVDSS 30 -- -- V VGS = 0V, ID = 250A IDSS -- -- 1.0 A VDS = 30V, VGS = 0V IGSS -- -- 100 nA VGS = 20V, VDS = 0V VGS(TH) 1 1.45 2.1 V VDS = VGS, ID = 250A RDS(ON) -- -- 14 18 21 32 m Forward Transfer Admittance |Yfs| -- 8.1 -- S VGS = 4.5V, ID = 5.6A VDS = 5V, ID = 7A Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD -- 0.7 1.0 V VGS = 0V, IS = 1A Ciss -- 767 -- pF Output Capacitance Coss -- 110 -- pF Reverse Transfer Capacitance Crss -- 105 -- pF Gate Resistance Rg Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Qg Qg -- -- 1.4 7.8 -- -- nC Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Max Unit -- 16.1 -- nC Qgs -- 1.8 -- nC Qgd -- 2.5 -- nC Turn-On Delay Time tD(ON) -- 5.0 -- ns Turn-On Rise Time Turn-Off Delay Time tR -- -- 4.5 26.3 -- -- ns ns -- 8.55 -- ns Gate-Drain Charge Turn-Off Fall Time Notes: tD(OFF) tF Test Condition VGS = 10V, ID = 7A VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 9A VGS = 10V, VDS = 15V, RG = 6, ID = 1A 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMC3021LSD Document number: DS32152 Rev. 4 - 2 2 of 9 www.diodes.com February 2020 (c) Diodes Incorporated DMC3021LSD 30 30 VGS = 8.0V )A ( T 20 N E R R U C 15 N IA R D 10 ,D I VGS = 4.5V VGS = 3.0V 20 15 10 VGS = 2.5V 5 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 2 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D ,N ) 0.1 VGS = 2.5V R 0.01 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.4 1.2 VGS = 4.5V ID = 10A 0.8 VGS = 10V ID = 11.6A 0.6 -50 -25 0 25 50 75 100 125 150 C)) TJ, JUNCTION TEMPERATURE ( ( Fig. 5 On-Resistance Variation with Temperature DMC3021LSD Document number: DS32152 Rev. 4 - 2 0 1 2 3 VGS , GATE SOURCE VOLTAGE (V) 4 0.06 VGS = 4.5V 0.05 0.04 0.03 TA = 150C TA = 125C 0.02 TA = 85C TA = 25C 0.01 TA = -55C 0 0 30 1.6 1.0 TA = 25C TA = -55C O (S D VGS = 4.5V 0 TA = 85C Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = 2.0V 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 150C TA = 125C 5 0 V DS = 5V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 3 of 9 www.diodes.com 5 10 15 20 25 I D , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 30 0.05 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 VGS = 10V ID = 11.6A 0 -50 -25 0 25 50 75 100 125 150 C)) TJ, JUNCTION TEMPERATURE ( ( Fig. 6 On-Resistance Variation with Temperature February 2020 (c) Diodes Incorporated DMC3021LSD 2.4 T ( S G 20 2.0 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) )V ( E G A T L O V D L O H S E R H T E T A G , )H 1.6 ID = 1mA 1.2 ID = 250A 0.8 0.4 = 25 TAT=A 25 C 12 8 4 V 0 0 -50 0 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 C, CAPACITANCE (pF) 1,000 Ciss Coss Crss 100 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 30 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) )A 10,000 n ( T N E R R 1,000 U C E G A K A E 100 L E C R U O S -N 10 IA R D ,S f = 1MHz I S D 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 TA= 150C TA= 125C TA= 85C TA= 25C TA= -55C 1 0 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 100 ID, DRAIN CURRENT (A) RDS(ON) Limited PW = 100s 10 1 PW = 1ms PW = 10ms 0.1 PW = 100ms TJ(Max) = 150 PW = 1s TC = 25 Single Pulse PW = 10s DUT on 1*MRP Board DC VGS = 10V 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMC3021LSD Document number: DS32152 Rev. 4 - 2 100 4 of 9 www.diodes.com February 2020 (c) Diodes Incorporated DMC3021LSD Electrical Characteristics P-CHANNEL - Q1 (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ BVDSS -30 -- -- V VGS = 0V, ID = -250A IDSS -- -- -1.0 A VDS = -30V, VGS = 0V IGSS -- -- 100 nA VGS = 20V, VDS = 0V VGS(TH) -1 -2.2 39 VDS = VGS, ID = -250A RDS(ON) -1.7 30 V -- -- 42 53 m VGS = -10V, ID = -4.3A VGS = -4.5V, ID = -3.7A Forward Transfer Admittance |Yfs| -- 7 -- S VDS = -5V, ID = -4.3A Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD -- -0.75 -1.0 V VGS = 0V, IS = -1.7A Ciss -- 1002 -- pF Output Capacitance Coss -- 125 -- pF Reverse Transfer Capacitance Gate Resistance Crss -- -- 118 13 -- -- pF Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Qg Qg -- 10.1 -- nC -- 21.1 -- nC Qgs -- 2.8 -- nC Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Rg Max Unit Qgd -- 3.2 -- nC Turn-On Delay Time Turn-On Rise Time tD(ON) tR -- -- 10.1 6.5 -- -- ns ns Turn-Off Delay Time tD(OFF) -- 50.1 -- ns tF -- 22.2 -- ns Gate-Drain Charge Turn-Off Fall Time Notes: Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -6A VGS = -10V, VDS = -15V, RG = 6 , ID = -1A 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 20 20 VGS = -10V VDS = -5V VGS = -4.5V VGS = -4.0V )A 15 ( T N E R R U 10 C N IA R D ,D 5 I ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) ) 15 A ( T N E R R U C 10 N I A R D ,D I 5 VGS = -3.5V VGS = -3.0V TA= 150C TA = 125C TA= 85C 0 VGS = -2.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristics DMC3021LSD Document number: DS32152 Rev. 4 - 2 5 TA= 25C TA= -55C 0 0 1 2 3 4 5 V GS, GATE SOURCE VOLTAGE (V) 6 Fig. 13 Typical Transfer Characteristics 5 of 9 www.diodes.com February 2020 (c) Diodes Incorporated DMC3021LSD 0.10 0.08 0.06 VGS = -4.5V 0.04 VGS = -10V 0.02 O ( S D R 0.08 TA = 150C 5 10 15 ID , DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 85C TA = -55C 0.02 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.3 1.1 VGS = -10V ID = -10A 0.9 V GS = -4.5V ID = -5A 0.07 0.06 VGS = -4.5V ID = -5A 0.05 0.04 0.03 VGS = -10V ID = -10A 0.02 O ( S D 0.01 R 0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature 20 2.5 16 2.0 ID = -1mA IS, SOURCE CURRENT (A) 1.5 5 10 15 20 ID , DRAIN CURRENT (A) Fig. 15 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.08 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N 1.5 0.7 0 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Fig. 16 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 25C 0.04 20 0.5 -50 )V ( E G A T L O V D L O H S E R H T E T A G , )H TA = 125C 0.06 R 0 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) V GS = -10V O (S D 0 )D E E IZ C L R A U M O R S O - N N I (E A R C D N , )N A T OS (S IS DE R R N O 0.10 ) ( E C N A T S IS E R -N O E C R U O S -N I A R D ,N ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N ID = -250A 1.0 0.5 TA T=A25 C = 25 12 8 4 T ( S G V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature DMC3021LSD Document number: DS32152 Rev. 4 - 2 6 of 9 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 1918 Diode Forward Fig. Diode ForwardVoltage Voltagevs. vs.Current Current February 2020 (c) Diodes Incorporated DMC3021LSD 10,000 C, CAPACITANCE (pF) 1,000 Ciss Coss 100 10 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 19 Typical Typical Capacitance Capacitance Fig. 30 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) )A 10,000 n ( T N E R R 1,000 U C E G A K A E 100 L E C R U O S -N 10 IA R D ,S f = 1MHz I S D TA = 150C TA = 125C TA = 85C TA = 25C 1 0 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 100 ID, DRAIN CURRENT (A) RDS(ON) Limited PW = 100s 10 1 PW = 1ms PW = 10ms 0.1 0.01 TJ(Max) = 150 TC = 25 Single Pulse DUT on 1*MRP Board VGS = -10V 0.1 PW = 100ms PW = 1s PW = 10s DC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 22 SOA, Safe Operation Area DMC3021LSD Document number: DS32152 Rev. 4 - 2 100 7 of 9 www.diodes.com February 2020 (c) Diodes Incorporated DMC3021LSD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h --0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm E 1 b E1 h ) ides 7 A R 1 0. c 4 3 A1 e Q 45 All s 9 ( E0 L Gauge Plane Seating Plane D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMC3021LSD Document number: DS32152 Rev. 4 - 2 X 8 of 9 www.diodes.com February 2020 (c) Diodes Incorporated DMC3021LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2020, Diodes Incorporated www.diodes.com DMC3021LSD Document number: DS32152 Rev. 4 - 2 9 of 9 www.diodes.com February 2020 (c) Diodes Incorporated