DMC3021LSD
Document number: DS32152 Rev. 4 - 2
1 of 9
www.diodes.com
February 2020
© Diodes Incorporated
DMC3021LSD
D2
S2
G2
D1
S1
G1
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
RDS(ON) max
ID Max
TA = +25C
Q2
21mΩ @ VGS = 10V
8.5A
32mΩ @ VGS = 4.5V
7.2A
Q1
39mΩ @ VGS = -10V
-7A
53mΩ @ VGS = -4.5V
-5.6A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Power Management Functions
Analog Switch
Load Switch
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part. A
listing can be found at
https://www.diodes.com/products/automotive/automotive-
products/.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMC3021LSDQ)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Lead Frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC3021LSD-13
SO-8
2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SO-8
Top View
Top View
S2
D1
S1
D2
G1
G2 D2
D1
N-Channel MOSFET
P-Channel MOSFET
1
4
8
5
C3021LD
YY
WW
e3
= Manufacturer’s Marking
C3021LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 20 = 2020)
WW = Week (01 to 53)
DMC3021LSD
Document number: DS32152 Rev. 4 - 2
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February 2020
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DMC3021LSD
Maximum Ratings N-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +85°C
ID
8.5
7.1
A
Pulsed Drain Current (Note 6)
IDM
40
A
Maximum Ratings P-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +85°C
ID
-7.0
-4.5
A
Pulsed Drain Current (Note 6)
IDM
-30
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
2.5
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
50
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics N-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
30
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1.0
µA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1
1.45
2.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
—
14
21
mΩ
VGS = 10V, ID = 7A
18
32
VGS = 4.5V, ID = 5.6A
Forward Transfer Admittance
|Yfs|
—
8.1
—
S
VDS = 5V, ID = 7A
Diode Forward Voltage (Note 7)
VSD
—
0.7
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
767
—
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
110
—
pF
Reverse Transfer Capacitance
Crss
—
105
—
pF
Gate Resistance
Rg
—
1.4
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
—
7.8
—
nC
VDS = 15V, ID = 9A
Total Gate Charge (VGS = 10V)
Qg
—
16.1
—
nC
Gate-Source Charge
Qgs
—
1.8
—
nC
Gate-Drain Charge
Qgd
—
2.5
—
nC
Turn-On Delay Time
tD(ON)
—
5.0
—
ns
VGS = 10V, VDS = 15V,
RG = 6Ω, ID = 1A
Turn-On Rise Time
tR
—
4.5
—
ns
Turn-Off Delay Time
tD(OFF)
—
26.3
—
ns
Turn-Off Fall Time
tF
—
8.55
—
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMC3021LSD
Document number: DS32152 Rev. 4 - 2
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DMC3021LSD
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
30
I , DRAIN CURRENT (A)
D
25
20
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0.01
0.1
1
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (
癈
)
J
R, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 10V
I = 11.6A
GS
D
V = 4.5V
I = 10A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (
癈
)
J
0
0.01
0.02
0.03
0.05
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0.04
V = 10V
I = 11.6A
GS
D
V = 4.5V
I = 10A
GS
D
0
5
10
15
20
25
30
0
1
2
3
4
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0
5
10
15
20
25
30
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
0
0.01
0.02
0.03
0.06
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
0.05
0.04
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
(°C )
(°C )
DMC3021LSD
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DMC3021LSD
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
T = 25
癈
A
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
f = 1MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
TJ(Max) = 150
℃
TC= 25℃
Single Pulse
DUT on 1*MRP Board
VGS = 10V
R
DS(ON)
Limited
DC
PW=10s
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100µs
0
0.4
0.8
1.2
1.6
2.0
2.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
I = 1mA
D
I = 250µA
D
0
5
10
15
20
25
30
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I
,
D
R
A
I
N
-
S
O
U
R
C
E
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TA = 25°C
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
DMC3021LSD
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DMC3021LSD
Electrical Characteristics P-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
-1.0
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-1
-1.7
-2.2
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
—
—
30
39
mΩ
VGS = -10V, ID = -4.3A
42
53
VGS = -4.5V, ID = -3.7A
Forward Transfer Admittance
|Yfs|
—
7
—
S
VDS = -5V, ID = -4.3A
Diode Forward Voltage (Note 7)
VSD
—
-0.75
-1.0
V
VGS = 0V, IS = -1.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
1002
—
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
125
—
pF
Reverse Transfer Capacitance
Crss
—
118
—
pF
Gate Resistance
Rg
—
13
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
—
10.1
—
nC
VDS = -15V, ID = -6A
Total Gate Charge (VGS = -10V)
Qg
—
21.1
—
nC
Gate-Source Charge
Qgs
—
2.8
—
nC
Gate-Drain Charge
Qgd
—
3.2
—
nC
Turn-On Delay Time
tD(ON)
—
10.1
—
ns
VGS = -10V, VDS = -15V,
RG = 6Ω , ID = -1A
Turn-On Rise Time
tR
—
6.5
—
ns
Turn-Off Delay Time
tD(OFF)
—
50.1
—
ns
Turn-Off Fall Time
tF
—
22.2
—
ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Fig. 12 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -10V
GS
V = -3.5V
GS
V = -4.0V
GS
0
5
10
15
20
0
1
2
3
4
5
6
Fig. 13 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
DMC3021LSD
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0.4 0.6 0.8 1.0 1.2 1.4
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 18 Diode Forward Voltage vs. Current
0
4
8
12
16
20
I , SOURCE CURRENT (A)
S
T = 25
癈
A
0
5
10
15
20
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
0
0.02
0.04
0.06
0.10
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
0.08
V = -10V
GS
V = -4.5V
GS
0
0.02
0.04
0.06
0.08
0.10
0
5
10
15
20
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
I , DRAIN CURRENT (A)
Fig. 15 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
V = -10V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 16 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
D
S
(
O
N
)
V = -10V
I = -10A
GS
D
V = -4.5V
I = -5A
GS
D
Fig. 17 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.04
0.05
0.08
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
0.07
0.06
V = -10V
I = -10A
GS
D
V = -4.5V
I = -5A
GS
D
0
0.5
1.0
1.5
2.0
2.5
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
I = -1mA
D
I = -250µA
D
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TA = 25°C
Fig. 19 Diode Forward Voltage vs. Current
DMC3021LSD
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DMC3021LSD
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 19 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
f = 1MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 SOA, Safe Operation Area
TJ(Max) = 150
℃
TC= 25℃
Single Pulse
DUT on 1*MRP
Board
VGS = -10V
R
DS(ON)
Limited
DC
PW=10s
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100µs
0
5
10
15
20
25
30
Fig. 21 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I
,
D
R
A
I
N
-
S
O
U
R
C
E
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
Fig. 20 Typical Capacitance
DMC3021LSD
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DMC3021LSD
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
1
b
e
E
A
A1
9° (All sides)
4°± 3°
c
Q
h
45°
R 0.1
7°
D
E0
E1
L
Seating Plane
Gauge Plane
CX
Y
Y1
X1
SO-8
Dim
Min
Max
Typ
A
1.40
1.50
1.45
A1
0.10
0.20
0.15
b
0.30
0.50
0.40
c
0.15
0.25
0.20
D
4.85
4.95
4.90
E
5.90
6.10
6.00
E1
3.80
3.90
3.85
E0
3.85
3.95
3.90
e
--
--
1.27
h
--
--
0.35
L
0.62
0.82
0.72
Q
0.60
0.70
0.65
All Dimensions in mm
Dimensions
Value (in mm)
C
1.27
X
0.802
X1
4.612
Y
1.505
Y1
6.50
DMC3021LSD
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DMC3021LSD
IMPORTANT NOTICE
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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