© 2010 IXYS Corporation, All Rights Reserved DS99718H(03/10)
VDSS = 1200V
ID25 = 32A
RDS(on) ≤≤
≤≤
≤ 310mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 1200 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 32 A
IDM TC= 25°C, Pulse Width Limited by TJM 100 A
IATC= 25°C 16 A
EAS TC= 25°C 2 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 1000 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, RMS t = 1 minute 2500 V~
IISOL ≤ 1mA t = 1 second 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
IXFN32N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1200 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±300 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 310 mΩ
PolarTM HiPerFETTM
Power MOSFET
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Features
zInternational Standard Package
zminiBLOC, with Aluminium Nitride
Isolation
zIsolation Voltage 2500 V~
zHigh Current Handling Capability
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(on) HDMOSTM Process
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh Voltage Switch-Mode and
Resonant-ModePower Supplies
zHigh Voltage Pulse Power
Applications
zHigh Voltage Discharge Circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC Converters
zHigh Voltage DC-AC Inverters
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN32N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 17 28 S
Ciss 21 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1100 pF
Crss 77 pF
RGi Gate input resistance 0.84 Ω
td(on) 70 ns
tr 62 ns
td(off) 88 ns
tf 58 ns
Qg(on) 360 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 130 nC
Qgd 160 nC
RthJC 0.125 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 32 A
ISM Repetitive, Pulse Width Limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 1.9 μC
IRM 15 A
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
IF = 20A, -di/dt = 100A/μs
VR= 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
© 2010 IXYS Corporation, All Rights Reserved
IXFN32N120P
Fi g . 1. Ou tput Ch ar acter isti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
28
32
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
8V
Fi g . 2. Exten d ed Ou tp u t Ch ar acter i s ti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mperes
V
GS
= 10V
9V
7V
8V
Fi g. 3. Outp ut C h aracteristics T
J
= 125ºC
0
4
8
12
16
20
24
28
32
0 2 4 6 810121416182022
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
Fig. 4. R
DS(on)
No r mali z ed to I
D
= 16A Value
vs. Ju ncti o n Temp er ature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centigrad e
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
No r mali z ed t o I
D
= 16A Value
vs. D rain C u r rent
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
010203040506070
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximum D r ai n Curr en t vs.
Case Temp er ature
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Ampere s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN32N120P
Fi g . 7. Inpu t Admi ttance
0
5
10
15
20
25
30
35
40
45
50
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- V olt s
I
D
- Amperes
T
J
= 12 5ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35 40 45 50
I
D
- A mp e re s
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.30.40.50.60.70.80.91.01.11.2
V
SD
- V olt s
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450 500
Q
G
- NanoCoulombs
V
GS
- Vol ts
V
DS
= 600V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1000
10 100 1,000 10,000
V
DS
- V olts
I
D
- Amperes
R
DS(on)
Limit
DC
100ms
10ms
1ms
100µs
25µs
T
J
= 150ºC
Tc = 25ºC
Single Pulse
© 2010 IXYS Corporation, All Rights Reserved IXYS REF: F_32N120P(99) 3-04-10-D
IXFN32N120P
Fig. 13. Maximum T ransient Thermal Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 13. Maximum Transient Thermal Im pedance
0.300
