VUB72-12NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1200 V VCES = 1200 V I DAV = I FSM = 75 A I C25 = 58 A 600 A VCE(sat) = 1.85 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB72-12NOXT Backside: isolated 6 11 12 10 NTC 1~ 7~ 9~ 5 2 4 Features / Advantages: Applications: Package: V1-A-Pack Package with DCB ceramic base plate Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20151102d VUB72-12NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 1200 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.10 V 1.38 V 1.01 V IF = 25 A IF = 75 A IF = 25 A IF = 75 A TVJ = 125 C 1.37 V T VJ = 150 C 75 A TVJ = 150 C 0.79 V 7.7 m d= for power loss calculation only thermal resistance case to heatsink max. Unit 1300 V VR = 1200 V rectangular R thCH typ. VR = 1200 V TC = 110 C Ptot min. 1.1 K/W 0.3 K/W TC = 25C 110 W t = 10 ms; (50 Hz), sine TVJ = 45C 600 A t = 8,3 ms; (60 Hz), sine VR = 0 V 650 A t = 10 ms; (50 Hz), sine TVJ = 150 C 510 A t = 8,3 ms; (60 Hz), sine VR = 0 V 550 A t = 10 ms; (50 Hz), sine TVJ = 45C 1.80 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 1.76 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 1.30 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 1.26 kAs 19 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20151102d VUB72-12NOXT Ratings Brake IGBT Symbol VCES Definition Conditions min. VGES max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TC = 25C 58 A TC = 80 C 40 A 195 W 2.15 V TVJ = collector emitter voltage I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 2 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 35 A t d(on) turn-on delay time TC = 25C IC = 35 A; V GE = 15 V TVJ = 25C 1.85 TVJ = 125C 2.15 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25C 5.9 6.5 V 0.1 mA 0.1 mA TVJ = 125C 35 A VGE = 15 V; R G = 27 VGE = 15 V; R G = 27 SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 900 V; VGE = 15 V I SC short circuit current RG = 27 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 110 nC 70 ns 40 ns 250 ns 100 ns 3.8 mJ 4.1 mJ TVJ = 125C VCEK = 1200 V I CM V 500 inductive load VCE = 600 V; IC = 5.4 max. Unit 1200 V TVJ = 125C 105 A 10 s A 140 0.65 K/W K/W 0.25 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 31 A TC = 80 C 21 A TVJ = 25C 2.97 V TVJ = 25C 0.1 mA TVJ = 125C 0.5 mA I F80 VF forward voltage I F = 25 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = trr reverse recovery time IF = 25 A R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 600 V 400 A/s TVJ = 125C 2.43 V 1.2 C 18 A 130 ns 1.6 K/W 0.55 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20151102d VUB72-12NOXT Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 C -40 125 C 125 C 37 Weight MD creepage distance on surface | striking distance through air d Spb/Apb VISOL g 2 mounting torque d Spp/App typ. t = 1 minute Date Code Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage 2.5 50/60 Hz, RMS; IISOL 1 mA Prod. Index yywwA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Ordering Number VUB72-12NOXT Marking on Product VUB72-12NOXT Similar Part VUB72-16NOXT Package V1-A-Pack Delivery Mode Blister Quantity 24 Code No. 510734 Voltage class 1600 7000 Temperature Sensor NTC 6000 Symbol Definition Conditions R25 resistance TVJ = 25 B25/50 temperature coefficient V0 R0 2.13 * on die level Rectifier Brake IGBT Brake Diode V 0 max threshold voltage 0.79 1.1 1.16 R0 max slope resistance * 6.5 40 43 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved typ. 2.2 3560 Equivalent Circuits for Simulation I min. max. Unit 2.27 k K T VJ = 150 C 5000 4000 R 3000 [ ] 2000 1000 0 0 V m 50 100 150 TC [C] Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20151102d VUB72-12NOXT Outlines V1-A-Pack 4,6 15,8 1 0,5 +0,2 1 3,6 0,5 5 1 O 0,5 0,25 35 26 63 31,6 2 17 13 max. 0,25 8,3 0,1 R2 52 (see 1) O 6,1 O 2,5 1,5 *7 *14 0,3 *0 11,75 *7 0,3 *14 12,2 11,75 = 5,5 = 1x45 3 4 5 8 9 10 15 6 2 7 4 1 6 *11 5,5 *0 O 2,1 *11 6 0,5 *14 *7 25 *0 *7 *14 Marking on product Aufdruck der Typenbezeichnung 25 O 0,8 * 25,75 0,3 25,75 0,3 1 0,2 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kuhlkorper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflachenbehandlung der Pins: verzinnt (Sn) im Tauchbad 4. Detail X : EJOT PT(R) self-tapping screws (dimension K25) to be recommended for mounting on PCB selbstschneidende Schraube (Groe K25) empfohlen fur die PCB-Montage Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm Bei der Wahl der Schraubenlange die PCB-Dicke und die maximale Lochtiefe von 6mm beachten Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm 2 +0,2 6 11 12 10 NTC 1~ 7~ 9~ 5 2 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20151102d VUB72-12NOXT Rectifier 500 100 2000 50 Hz 0.8 x V RRM 80 1600 400 IF VR = 0 V 60 I 2t TVJ = 45C IFSM 1200 TVJ = 45C 2 [A] [A s] [A] 40 TVJ = 150C 300 TVJ = 125C 150C 20 TVJ = 150C 800 400 TVJ = 25C 0 0.4 0.8 1.0 1.2 1.4 200 10-3 1.6 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 24 Ptot 10 2 Fig. 3 I t vs. time per diode 100 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 1 t [ms] VF [V] 32 [W] 0.6 DC = 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 1 80 0.5 0.4 IF(AV)M 60 0.33 0.17 16 [A] 40 8 20 0 0.08 0 0 4 8 12 16 20 24 28 32 0 25 50 75 100 125 150 0 175 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 1.0 0.8 ZthJC Constants for ZthJC calculation: 0.6 [K/W] 0.4 0.2 0.0 1 10 100 1000 10000 i Rth (K/W) ti (s) 1 0.0607 0.0004 2 0.1230 0.00256 3 0.2305 0.0045 4 0.4230 0.0242 5 0.2628 0.1800 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20151102d VUB72-12NOXT Brake IGBT 70 70 70 13 V VGE = 15 V VGE = 15 V 17 V 19 V 11 V 60 60 50 50 50 IC 40 IC 40 IC 40 60 TVJ = 25C [A] 30 [A] 30 TVJ = 125C 20 [A] 30 9V 20 20 TVJ = 125C 10 TVJ = 125C 10 0 10 0 0 1 2 3 TVJ = 25C 0 0 1 2 3 4 5 5 6 7 8 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 10 IC = 35 A VCE = 600 V 8 VGE E 10 11 12 13 Fig. 3 Typ. tranfer characteristics 6 Eon RG = 27 VCE = 600 V VGE = 15 V TVJ = 125C 15 9 VGE [V] Eoff 6 IC = 35 A VCE = 600 V VGE = 15 V TVJ = 125C 5 Eon E 10 [V] [mJ] [mJ] 4 Eoff 4 5 2 0 0 0 20 40 60 80 100 120 140 0 20 40 60 80 3 20 40 60 80 QG [nC] IC [A] RG [ ] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 0.1 ZthJC [K/W] 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 t [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20151102d VUB72-12NOXT Brake Diode 3.0 40 35 30 IF VR = 800 V 40 2.0 25 Qrr 1.5 20 [A] TVJ = 125C VR = 800 V 2.5 TVJ = 25C 100C 150C 50 TVJ = 125C [C] 15 IF = 30 A IRM 30 IF = 15 A IF = 7.5 A [A] 20 IF = 30 A IF = 15 A IF = 7.5 A 1.0 10 10 0.5 5 0 0 1 2 VF [V] 3 0 0.0 100 4 0 1000 200 diF /dt [A/s] Fig. 1 Forward current IF versus VF Fig. 3 Typ. peak reverse current IRM versus diF /dt Fig. 2 Typ. reverse recov. charge Qr versus diF /dt 2.0 180 1.5 400 600 800 1000 diF /dt [A/s] 120 1.2 TVJ = 125C TVJ = 125C VR = 800 V IF = 15 A VR = 800 V 160 80 trr Kf 1.0 140 [ns] IRM 0.8 IF = 30 A VFR tfr IF = 15 A IF = 7.5 A [V] [s] 40 0.5 0.4 120 Qr 0.0 100 0 40 80 120 160 0 200 400 600 800 1000 diF /dt [A/s] TVJ [C] Fig. 4 Dynamic parameters Qr, I RM versus TVJ tfr VFR 0 0 200 400 600 0.0 800 1000 -d i F /dt [A/s] Fig. 5 Typ. recovery time trr versus diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 10 1 ZthJC 0.1 [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20151102d Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: VUB72-12NOXT