2SC3927 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) 100max A V IEBO VEB=7V 100max A V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25C) W VBE(sat) Tj 150 C fT -55 to +150 C COB VCB=10V, f=1MHz 105typ 0.5max IC=5A, IB=1A 1.2max V VCE=12V, IE=-1A 6typ MHz V pF IB2 (A) ton (s) tstg (s) tf (s) 5 10 -5 0.75 -1.5 1max 5max 0.5max 0 1 2 3 12 0.05 0.1 Collector-Emitter Voltage V C E (V) C 5 5 -5 0.5 1 5 t o n * t s t g* t f ( s) 10 1 5 10 t s tg 5 V C C 250V I C :I B 1 :-I B2 =10:1.5:3 1 0.5 t on tf 0.1 0.2 0.5 20 10 10 10 0 s 0.1 1 10 Temp) (Case P c - T a Derating 120 500 Collector-Emitter Voltage V C E (V) 1000 nk 100 si Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 100 at 0.02 50 1000 he 500 600 100 ite 100 Collector-Emitter Voltage V C E (V) 82 0.5 Time t(ms) 1 0.05 50 10 1 fin 0.05 0.02 10 5 0.5 0.1 1.2 In Without Heatsink Natural Cooling 1.0 ith 1 0.5 0.1 1 5 Co lle ctor Cu rre nt I C ( A) s 0.8 W Co lle ctor Cu rre nt I C (A) 1m 0.6 2 M aximu m Power Dissipat io n P C (W) 20 ms 0.4 j-a - t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) DC Transient Thermal Resistance -5 5 C Switching Ti me DC C urrent G ain h FE 25 C 5 0 Base-Emittor Voltage V B E (V) 10 125 C 0.5 p) 0 10 t on *t st g * t f - I C Characteristics (Typical) 50 0.1 em 2 C (V C E =4V) 0.05 4 Collector Current I C (A) h FE - I C Characteristics (Typical) 5 0.02 eT T V C E (sat) 0 0.02 4 (Case 6 Cas 125C emp) j- a ( C/W) 0 p) ase Tem C ( I B =100mA 2 -55C (C 125 200mA 4 ase Temp) 25C (C 8 Collector Current I C (A) 400m A 6 V B E (sat) 1 ) Collector Current I C (A) 60 0m A (V C E =4V) 10 mp 80 0m A 8 I C - V BE Temperature Characteristics (Typical) (I C /I B =5) Te 1A 1.4 E se 2A Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E(s a t) (V ) 1. C Weight : Approx 6.0g a. Type No. b. Lot No. V CE (sat),V BE (sat) - I C Temperature Characteristics (Typical) I C - V CE Characteristics (Typical) 10 (C a 50 IC (A) IB1 (A) 0.65 +0.2 -0.1 5.450.1 B VBB2 (V) C 250 5.450.1 VBB1 (V) 25 VCC (V) 2 3 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) RL () o3.20.1 -55C Tstg a b IC=5A, IB=1A ) 7 IC 2.00.1 Temp VEBO 4.80.2 (Case 550 15.60.4 9.6 25C VCEO 19.90.3 V 1.8 VCB=800V 900 5.00.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25C) 2SC3927 Unit 4.0 Electrical Characteristics Conditions 2SC3927 4.0max Symbol 20.0min Absolute maximum ratings (Ta=25C) Application : Switching Regulator and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(C) 150