82
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3927
900
550
7
10(Pulse15)
5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3927
100max
100max
550min
10to28
0.5max
1.2max
6typ
105typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=5A
IC=5A, IB=1A
IC=5A, IB=1A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
2SC3927
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
2
4
6
8
10
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
800mA
1A
600mA
400mA
200mA
1.2A
I
B
=100mA
0.02
0.1
0.05
15100.5
0
1
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
0.2 10.5 105
0.1
0.5
5
10
1
Switching Time ton•tstg•tf(µs)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:–IB2=10:1.5:3
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
120
100
50
3.5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
100 50050 1000
1
0.5
0.1
0.05
0.02
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
10 50 100
500 600
0.05
0.02
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
100µs
10ms
1ms
DC
0
10
4
2
8
6
0 1.20.4 0.6 0.8 1.00.2Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
–55˚C (Case Temp)
0.02 0.10.05 1 1050.5
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
25˚C (Case Temp)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
50
IC
(A)
5
VBB2
(V)
–5
IB2
(A)
–1.5
ton
(
µ
s)
1max
tstg
(
µ
s)
5max
tf
(
µ
s)
0.5max
IB1
(A)
0.75
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
