Ordering number: EN 2254 No,2254 Features -. High breakdown voltage ( Vero 2SAT480/285$C3790 PNP/NPN Epitaxial Planar Type Silicon Transistors H1GH-DEFINITION CRT Dispiay Vipeo Output APPLICATIONS >300V) - Small reverse transfer capacitance and excellent high frequency chracteristic Cre=1.8pF(NPN), 2.3pF (PNP) . Adoption of MBIT process ( ): 2541480 Absolute Maximum Ratings at Ta=25C Collector_to-Base Voltage Collector -to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Electrical Characteristics at Ta=25C Collector Cutoff Current Emitter Cutoff Current Be Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance C-E Saturation Voltage B-E Saturation Voltage unit Vopo (-)300 V Vero (-)300 V don (-)200 mA Po 1.5 W o Te=25~C 7 W Tj 150 ~% Tstg ~55 to +150 C min typ max unit hep Vop=(-)10V,I,=(-)10mA = 40# 320% fr Vop=(~)30V,Ip=(~) 10mA 150 ' MHz cob Vopz(-) 30V, f= IMHz 2.6 pF (3.1) Che Vege (-) 30V, f= 1MHz 1.8 pF (2.3) Vv In=(-)20mA,Ip=(-) 2mA (-)0.6 V CE(sat) C 2B VER(sat) Ic=(-)20mA, Tp=(-)2mA (-)1.0 V Continued on next page. Package Dimensions 2042A (unit:mm) 11.0 4.8>4 m L 8: Base ai 6 c: Collector 3 E: Emitter SANYO: TO126ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters _ TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN: .- 4087TA,TS Ne2254-1/52S5A1480/25C3790 Continued from preceding page. min typ max unit C-B Breakdown Voltage Vepr)cpo Ic={-) 10pA,I,=0 (+}300 v C-E Breakdown Voltage Vopr) cro To=(-) mA , Rpp=0o (-)300 V E-~B Breakdown Voltage Vopryepo Ipe(~-) 10pa,Ig=0 (-)5 V *: The 2SA1480/2SC3790 are classified by 10mA hp, as follows: 100 E 200 | 160 F 320] [40 Cc 80 [ 60 D120 Ie - Vee 79 Sq 1480 Vab A aq 12044 1-16 = 100H4 ~l4 Bou 4 co Aa0 2A I a eS 20KA Collector Current, Ip l a 0 =0 -h 5 Oo =) -2 3 6 -7 -8 Collector-to-Emitter Voltage, Vp - 7-9 = E- Ic - Vee 1 Qo { wo OO HR S0HA 1 2 1 I i ALA t oa 30 ! uw J 6 ~20 4A 1 ] { ood 1OMA Collector Current,I, - mA I 0 Ip=o QO -10 -20 -3% -4 -50 - 30 -80 -90 Collector-to- Emitter Voltage ,Vep -V Ir - : -120 C BE 284 1460 Vop= tov i" 8 Collector Current,I, - mA 1 1 & S Ta=75% 25% | J 25 eo yy { 6 t 3 P_! St KP 0 -02 - 04 -06 -08 ~tD Base -to- Emitter Voltage , Var - Vv Ic - VCE 2803790 | a 1 100 HAA o ~ BOA B2 2 10 60uA 5 hy oO wy o o q4 oO Q oO mw 2 10 Collector. to-Emitter Voltage, Vep - V Ie - 10 2803790 = mn - 20448 ow ng LOA Collector Current,I, - mA : ag Tg=0 a 10, . 40 o WwW 99 100 Collector-to- Emitter Voltage Ven - v Ic ~ Vee 120 T 2803790 Vor = 10V i ay eI 3% 9 L E60 NFER oO if alu 5 ay N o i a 4 j | 0 20 J 0 0 0.2 OA 0.6 0.8 1 Base-to-Emitter Voltage, Vg, - V Ne2254-2/525A1480/2SC3790 hFE + Ic 28A 1480 Yon = 10V DC Current Gain,hpp 8 -10 -10 -10 Collector Current Ip -~ mA ft - 1 g 2841480 Gain-Bandwidth Product,f, - MHz 8 3 10 ~10 Collector Current,I, ~ mA Cob - VCB 0 254 1480 f= \MHz a Output Capacitance,c,), - pF a . ~I0 -10 2 -100 Collector-to-Base Voltage , Voz - Vv Cre - V 28a 1480 f= 1MHz Che 7 pF Reverse Transfer Capacitance, ~10 10 =! / 10 Collector-to.Base"VoltakejVeR - v FE - 1 2803790 Vop= 10V ja] = a. 3 3 100 oe a o L & a oO oO A oS A 10 Collector Current,I, - mA fT - 1 2803790 Vog=30V Gain-Bandwidth Product, fy MHz 8 3 100 1p 10 Collector Current ,Ip ~ mA Cob ~ YR 2803790 f= 1MHz 3 Output Capacitance ,, - pF = : ) 10 10 100 Collector. toa. Base Voltage, Voz -V Cre - V 2803790 = | MHz e 7 PF c,, 3 Reverse Transfer Capacitance, & 10 ~ 10 . 109 Collector -to-Base Voltage Voy - v No2254-3/525A1480/25C3790 v - Ic > VeE(sat) - Ic b 410 pe I A480 , 2803790 I/ Ig=10 ~ 7 Ig= 10 3 2 . 8 B SS a5 38 70 2 & ao 4 8 a A a lo 6 o> 8 Pq Le & oO 64 on 3 y+ 24 O1 oa on & as -o 43 oa+ ot Sa 58 10 -10 2 f 400 ar) 2 Collector Current,I - mA Collector Current,I> - mA VeE{sat) - Ic VBE(sat) - fc 2581480 Inf Ip= 10 3 -10 C3790 I Ig=10 Saturation Voltage, Vprrsat) - V Saturation Voltage, Vpr(sat) - V u aI 3 3 4 LD A 1.0 5 5 & fa { t 8 g a Le a & 40 ~10 -100 z _ Collector Current,I, - mA Collector Current,I - mA A5 0 AS 0 2SA14B0 ; ic 2803790 < a , 7100 ' 100 I o wT 4 5 A 3 3 E 5 5 6 he & ~10 & - o o a 2 ro ot 2 3 3 Oo 10 100 , 10 joo Collector-to-Emitter Voltage, Vop - V Collector-to. Emitter Voltage, Vopr - iV P - Ta en ON Key Ls , Se we i No heat Sin Collector Dissipation,P, - WW a . i : ' ? 0 a 40 69 80 Oo 120 wo 160 Ambient Tmprature,Ta - C , No2254-4/528A1480/25C3790 Mi No products described or contained herein are intended for use in surgical implants, life-support systerns, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the ike, the failure of which may directly or indirectly cause injury, death or property loss, M Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of ther officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No2254-5/5