Gg HARRIS 2N6767 2N6768 N-Channel Enhancement-Mode August 1991 Power MOS Field-Effect Transistors Features Package TOQ-204AA 12A and 14A, 350V - 400V BOTTOM VIEW * DS(on) = 0.42 and 0.32 | . . DRAIN * SOA is Power-Dissipation Limited SOURCE J (FLANGE) * Nanosecond Switching Speeds d * Linear Transfer Characteristics O A oO * High Input Impedance GATE * Majority Carrier Device Description The 2N6767 and 2N6768 are n-channel enhancement-mode | Terminal Diagram silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, N-CHANNEL ENHANCEMENT MODE a motor drivers, relay drivers, and drivers for high-power bipolar a bo switching transistors requiring high speed and low gate-drive power. D Ww Be These types can be operated directly from integrated circuits. s Oo = These types are supplied in the JEDEC TO-204AA steel package. < o Ow G zs a Ss Absolute Maximum Ratings (Tc = +25C) Unless Otherwise Specified 2N6767 2N6768 UNITS Drain-Source Voltage ....... 0... cece ect cnet eet a teens 350* 400* v Drain-Gate Voltage (R@g = 20kN) 350* 400* Vv Continuous Drain Current TCH F250 Lecce cece e cee ete eee ee ete erect ten eneee 12* 14* A To = 41009... eee 7.75* g* A Pulsed Drain Current 20 25 A Gate-Source Voltage +20* +20* Vv Maximum Power Dissipation To = +259C (See Figure 11)... cece cee nett een e net Pp 150* 150* Ww Above To = +259C, Derate Linearly 20.0... 60. ccc e cece eee eee eee 1.2* 1.2* W/C Inductive Current, Clamped .......... 000s cece eee eee eee ee teenes lum 20 25 A (See Figures 1 and 2, = 100yH) Operating and Storage Junction Temperature Range . -55 to +150* -55 to +150* 9G Maximum Lead Temperature for Soldering .......... 0c ceeee een eeeee 300* 300* oC {0.063 (1.6mm) from case for 10s) *JEDEC registered vaiues CAUTION: These devices are sensitive to electrostatic discharge. Proper i.C. handling procedures should be followed. File Number 1 898.1 Copyright Harris Corporation 1991 4-34Specifications 2N6767, 2N6768 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. Max, Units Test Conditions 8Voss Orain Source Breakdown Voitage | 2N6767 350 - - v Ves79 2N6768 400 - - Vv Ip = 1.0 mA Vesith) Gate Threshold Voltage ALL 2.0 - 4.0 Vv | Vos = Vas. ip = 1 mA losse Gate Body Leakage Forward ALL - - 100 nA | Ves = 20V essa Gate Body Leakage Reverse ALL - - 400 nA Ves * -20V loss Zero Gate Voltage Orain Current ALL - 0.1 1.0 mA | Vos * Max. Rating, Vgg = 0 = 0.2 | 40 | mA | Vog = Max. Rating, Vgg = 0, Tc = 125C VoSton} Static Drain-Source On-State 2N6767 - - 5.4 Vv Veg = 10V, Ip = 12A Voltage @) 2ne768 | 66 | Vv | Vgg~10V, ip -14A Ros{on} Static Orain-Source On-State 2N6767 ~ 0.3 0.4* 2 Vas = 10V, Ip = 7.754 Resistance o 2ne768 | 0.25 | 0.3" 2 | Veg = 10V, tp = 9.00 Rogion) Static Drain-Source On-State 2N6767 - - 0.88 2 Vg * 10V, Ip = 7.754, Tg = 125C Resistance (1) 0; 2ne768 | - | oeer | 2 | Vgg = 10V, Ip = 9.0A, Te = 126C Q Forward Transconductance ALL 8.0 11.0 24 $ (8) | Vig = 18V, Ip = 9.0A fs OS D c Input Capacitance ALL 1000* | 2000 | 3000 pF - Vas = 9. Vp = 25V, f = 1.0 MHz Cos Output Capacitance ALL 200 400 600 pF See Fig. 10 Ig. Ci. Reverse Transfer Capacitance ALL 50 100 200 pF 8 td ton) Turn-On Oeiay Time ALL - - 35 Ms | Vo & 180V, Ip = 9.04, Z, = 4.79 ty Rise Time ALL = = 65 as (See Figs. 13 and 14) ty (off) Turn-Off Delay Time ALL - _ 150 ns {MOSFET switching times are essentially ty Fall Time ALL - - 75 ns independent of operating temperature.) Thermal Resistance Rinuc Junction-to-Case ALL - - 0.83* | Cc/w Rincs _Case-to-Sink ALL - 0.1 - C/W | Mounting surface flat, smooth, and greased. Ringa Junction-to-Ambient ALL = - 30 C/W | Free Air Operation Body-Drain Diode Ratings and Characteristics 4g Continuous Source Current 2N6767 = = 12 A Modified Mosr eT symbol o {Body Diode) a . showing the integra 2N6768 14 reverse P-N junction rectifier. 'Ism Pulsed Source Current 2N6767 - = 20 A G (Body Diode) 2ne768 | = 25 s Vsp Diode Forward Voltage (7) 2N6767 | 0.8" - 16 Vv Te = 28%C, Ig = 124, Vgg = 0 2ne768 | o.a5* | 17" Vv | Te = 25C, Ig = 14A, Vag = 0 ter Reverse Recovery Time ALL - 1000 - ns Ty = 150C, Ip = Ign, die /dt = 100 A/us Qaa Reverse Recovered Charge ALL - 2s - yc Ty = 150C, Ip = Iggy, dig /dt = 100 A/us *JEDEC registered values. (1) Pulse Test: Pulse Width < 300 usec, Duty Cycle < 2% VARY ty TO OBTAIN REQUIRED PEAK 1, E, = 0.58Vpgs bur = vp = 0.758Vos5 Vgg + 10V fo tya I Fig. 1 - Clamped inductive test circuit. Fig. 2 - Clamped inductive waveforms. 4-322N6767, 2N6768 BO ws PULSE 60 us PULSE a 5.6 a Vos = 18V 2 3 = z = 2 2 Zz z = = = 250C z z Ty = 2504 a a Ty= -550C 5 50 100 160 200 250 300 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) 0 ' 2 a 4 5 6 ? a gg, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical output characteristics for both types. Fig. 4 - Typical transfer characteristics for both types. o 10 - as PULSE iW w ! o = o 8 z a a < = as c : z ui $5 < = 5 : 4 = e a = = S 2 z 3 & 5 Ss 3s 2 0 1 2 3 4 5 o 1 2 3 4 5 Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS} Fig. 5 - Typical saturation characteristics for the 2N6767. Fig. 6. - Typical saturation characteristics for the 2N6768. 30 10 ps 10 2 Ty = 56C a z Zc = S m5 p= #12500 = 3 x 2 =< 5 5 2 wa 2 = Ty = 150C MAX & @ 201+ sInGte PULSE 2 2 = z =z a - 5 3 of * Vpg = 15V | 80 us PULSE TEST 05 o 4 8 12 16 20 03 Ip, DRAIN CURRENT (AMPERES) 8010 20 50 1 500 Vos, ORAIN-TO-SQUACE VOLTAGE (VOLTS) Fig. 7 - Typical transconductance versus drain current for Fig. 8 - Maximum safe operating area for both types. both types. 4-33Rosion) ORAIN-TO-SOURCE ON RESISTANCE Fig. 9 - Typical normalized on-resistance versus temp- Pp, POWER DISSIPATION (WATTS) (NORMALIZED) 2N6767, 2N6768 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) erature for both types. G 20 40 60 80 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 11 - Power versus temperature derating curve for bath types. Voo 2 190V 2082 PAF = 1 kHz tps lus Vo TO SCOPE Fig. 13 - Switching time test circuit. 4-34 4000 3200 2400 1600 C, CAPACITANCE {oF} 900 Fig. 10 - is, SOURCE CURRENT (AMPERES) Fig. 12 - INPUT, V, 10%, Vos (off} f Vgs=0 I I= t MHz 10 20 30 40 50 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS} Typical capacitance versus drain-to-source voltage for both types. Ign. 2N6788 Ig, 2N6768 1 2 Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical body-drain diode forward voltage for both types. 'p PULSE WIDTH tNPUT PULSE ! et PULSE [7 RISE TIME f-FaLL TIME Td {on} Fi YDS (off) QUTPUT, Vg VDS (on) 'y (oft) tym] Nel PF La tot Ns Fig. 14 - Switching time waveforms