FW261
No.8749-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1405PA MS IM TB-00001816
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
FW261 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID5A
Drain Current (PW≤10s) IDDuty cycle≤1% 6 A
Drain Current (PW≤100ms) IDDuty cycle≤1% 10 A
Drain Current (PW≤10µs) IDP Duty cycle≤1% 20 A
Allowable Power Dissipation PD
Mounted on a ceramic board (2000mm
2
✕0.8mm) 1unit, PW≤10s
1.8 W
Total Dissipation PT
Mounted on a ceramic board (2000mm
2
✕0.8mm), PW≤10s
2.2 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=5A 3.9 5.5 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=5A, VGS=10V 37 48 mΩ
RDS(on)2 ID=3A, VGS=4V 64 83 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 460 pF
Output Capacitance Coss VDS=10V, f=1MHz 95 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 75 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise Time trSee specified Test Circuit. 20 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 30 ns
Fall T ime tfSee specified Test Circuit. 20 ns
Marking : W261 Continued on next page.
Ordering number : EN8749
FW261
No.8749-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 8.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 2.0 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 1.6 nC
Diode Forward Voltage VSD IS=5A, VGS=0V 0.9 1.2 V
Package Dimensions Electrical Connection
unit : mm
7005-003
Switching Time Test Circuit
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=5A
RL=3Ω
VDD=15V
VOUT
FW261
VIN
10V
0V
VIN
14
58
5.0
4.4
6.0 0.3
1.5
1.8 MAX
0.1
0.595 1.27
0.2
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
8765
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
FW261
No.8749-3/4
10
7
5
3
2
100
0.001
2
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
1.0
0.1
2
10
20
40
60
80
100
1
2
3
4
5
6
7
10
9
8
0
--60 --40 --20 0 20 40 60 80 100 120 140
RDS(on) -- VGS
IT04959
1
2
3
4
5
00 0.4 0.8 1.00.2 0.6
ID -- VDS
VGS=2.0V
2.5V
3.0V
3.5V
IT04957
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ID -- VGS
VDS=10V
25
°
C
--25°C
Ta=75°C
IT04958
RDS(on) -- Ta
IT04960
0
ID=5A, VGS=10V
ID=3A, VGS=4V
SW Time -- ID
td(on)
td(off)
tr
tf
IT04963
Ciss, Coss, Crss -- VDS
IT04961
0.001 0.01
2357 0.1
23 57 1.0
23 57 10
2357
0.1 23 57
1.0 23 57
10
0.01
2
0.1
7
5
3
2
7
5
3
2
7
5
3
1.0
10 yfs-- ID
VDS=10V
Ta= --25°C
IT04962
0 0.2 0.4 0.6 0.8 1.0 1.41.2
IS -- VSD
VGS=0V
--25
°
C
25°C
Ta=75
°
C
VDD=15V
VGS=10V
75°C
6.0V
4.0V
8.0V
10.0V
25
°
C
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Ambient Temperature, Ta -- °C
012345678910
0
50
100
150
200
Ta=25°C
5A
ID=3A
3
100
7
5
1000
7
5
3
2
0 5 10 15 20 25 30
f=1MHz
Ciss
Coss
Crss
IT10287
FW261
No.8749-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2005. Specifications and information herein are subject
to change without notice.
PS
0.01 0.1 1.0 23 5723 5723 57 23
10 5
0.01
0.1
1.0
10
7
5
3
2
7
5
3
2
7
5
3
2
5
3
2
IT10288
IDP=20A
ID=5A
100ms
DC operation
1ms
10ms
10s
<10µs
100µs
Operation in this
area is limited by RDS(on).
VGS -- Qg
IT04965
0
2
4
6
8
10
0123456789
A S O
VDS=10V
ID=5A
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ta=25°C
Single pulse
Mounted on a ceramic board (2000mm2✕0.8mm) 1unit
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
0 20 40 60 80 100 120 140 160
0
0.5
1.0
1.5
1.8
2.5
2.0
2.2
IT10289
Mounted on a ceramic board(2000mm2✕0.8mm), PW≤10s
1unit
Total dissipation
Note on usage : Since the FW261 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.