Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL | PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK455 -200A | -200B The device is intended for use in Vos Drain-source voltage 200 200 Vv Switched Mode Power Supplies lb Drain current (DC) 14 13 A (SMPS), motor control, welding, Prot Total power dissipation 125 125 Ww DC/DC and AC/DC converters, and T, Junction temperature 175 175 C in automotive and general purpose Rosiony Drain-source on-state 0.23 0.28 Q switching applications. resistance; PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION or () d 1 |gate _ 7 : It a 2 {drain i i yes iI 3 |source \ i Foe! fe tab [drain | | 123 $s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage - - 200 Vv Vocr Drain-gate voltage Reg = 20 kQ - 200 Vv Ves Gate-source voltage - - 30 Vv -200A -200B lp Drain current (DC) Tab = 25C - 14 13 A Ib Drain current (DC) Tap = 100 C - 10 9 A tom Drain current (pulse peak vaiue) Tm = 25C - 56 52 A Prot Total power dissipation Tiny = 25C - 125 WwW sig Storage temperature - - 55 175 C i Junction Temperature - - 175 C THERMAL RESISTANCES SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Rin mb Thermal resistance junction to - - 1.2 KAW mounting base Rina Thermal resistance junction to - 60 - KAW ambient August 1996 704 Rev 1.100Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B STATIC CHARACTERISTICS Tn = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Vierypss Drain-source breakdown Ves = OVi lp = 0.25 mA 200 - - voltage Vesrro) Gate threshoid voltage Vos = Vegi lb = 1 MA 2.4 3.0 4.0 Vv loss Zero gate voltage drain-current | Vps = 200 V; Veg = OV; T, = 25C - 1 10 pA pss Zero gat voltage drain-:current |Vps = 200 V; Ve, = 0 V; T, =125C - 0.1 1.0 mA less Gate source leakage current Ves = +80 Vi Vpp = OV - 10 100 nA Rosjony Drain-source on-state Veg = 10V; BUK455-200A - 0.2 0.23 Q resistance b=a7A BUK455-200B - 0.22 | 0.28 DYNAMIC CHARACTERISTICS Tm = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Ors Forward transconductance Vag 25 Vi b= 7A 6.0 | 8.4 - s Coss Input capacitance Ves = OV; Vig = 25 V3 f= 1 MHz - 1400 | 1750 | pF Coss Output capacitance - 190 250 pF Cres Feedback capacitance - 55 80 pF te on Turn-on delay time Vop = 30 V3 lp = 3A; - 18 30 ns t Turn-on rise time Ves = 30 V; Reg = 50.0; - 35 60 ns te ott Turn-off delay time Reen = 50 Q - 85 120 ns Turn-off fail time - 35 50 ns Ly Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ly Internal drain inductance Measured from drain lead 6 mm - 45 - nH from package to centre of die L, Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tw = 25 C unless. otherwise specified SYMBOL {PARAMETER CONDITIONS MIN. | TYP. } MAX. | UNIT log Continuous reverse drain ~ - - 14 A current lone Pulsed reverse drain current - - - 56 A Voep Diode forward voltage lp=14A;Vegs= OV - 1.0 1.5 Vv te Reverse recovery time |. = 14 A; -di-/dt = 100 A/us; - 180 - ns Q, Reverse recovery charge Ves = OV; Va = 30 V - 1.8 - pc AVALANCHE LIMITING VALUE Ty = 25 C unless otherwise specified SYMBOL {PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Woes Drain-source non-repetitive Ip = 144A; Vpp $ 100 V ; - - 100 mJ unclamped inductive turn-off Veg= 10V; Reg = 502 energy August 1996 705 Rev 1.100Philips Semiconductors PowerMOS transistor Product Specification BUK455-200A/B 120 110 100 90 &0 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 Tmb/ C Fig.1. Normalised power dissipation. PD% = 100-P p/P 95 25 -o= Tiny) _2th j-emb / (KW) Ot 0.01 4 0.004 7 TE-O7 16-03 " t/s Fig.4.. Transient thermal impedance. Zn jane = f(t); parameter D = t/T 1E-05 120 1D% Normalised Current Derating 710 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 1720 140 160 180 Tmb/ C Fig.2. Normalised continuous drain current. ID%. = 100-Ip/tp 05 - = F(T pp); Conditions: Vgg2 10 V ID/A oO 0 2 4 6 8 10 12 #14 #16 vos/ Fig.5. Typical output characteristics, T; = 25 C. Ip = f(Vps); parameter Veg 18 20 IDSA 1 10 100 1000 VDS/V Fig.3. Safe operating area. T,,, = 25 C Ip & low = f(Vps); low single pulse; parameter t, /Ohm 0.8 0.6 0.4 02 0 o 4 & t2 16 20 24 28 ID/A Fig.6. Typical on-state resistance, T, = 25 C. Fosiony = f(lp); parameter Vas August 1996 706 Rev 1.100Philips Semiconductors PowerMOS transistor Product Specification BUK455-200A/B o 2 4 6 & 70 VGS/V Fig.7. Typical transfer characteristics. = f(Vgs) ; conditions: Vos = 25 V; parameter T, Go 60 -20 20 60 tive Fig.10. Gate threshold voltage. Vaso) = (7); conditions: Ip = 1 MA; Vos = Vas 400 140 180 o 4 8 12 16 20 24 28 ID/A Fig.8. Typical transconductance, T,= 25 C. ee = lp); Conditions: Vpg = 25 V Fig.11. Sub-threshold drain current. lp = "Ves conditions: T; = 25 C; Vos = Vas Normalised RDS(ON) = f(T}} -60 -20 20 0, Ti c 100 140 180 Fig.9. Normalised drain-source on-state resistance. @ = Apsion/Rosionjas c= f(T)i Ip = 7 As Vos = 10 V 1 0 20 40 VDS/V Fig.12. Typical capacitances, Cige, Coase, Crs C = f(Vps); conditions: Vag = 0 V; f= 1 MHz August 1996 707 Rev 1.100Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B WOSS% 120 110 106 90 86 76 60 50 40 30 26 10 0 0 10 20 30 20 40 60 80 100, 120 140 6160 = 180 QG/ne Fig.13. Typical turn-on gate-charge characteristics. Ves = (Q,); conditions: |, = 14 A; parameter Vs Tmb/ C Fig.15. Normalised avalanche energy rating. Woo5% = f(T); Conditions: 1, = 14 A 30 PIM EE VoD L f PA (4 } 20 vDs x7 aa vas ot / sy -ID/100 10 oo \ gh ) TUT. po =_e y ras | | Ror | | shunt 7 0 I 0 1 : VSDS/V i? Fig.16. Avalanche energy test circuit. Fig.14. Typical reverse diode current. , , 0 yr Wrsy = 0.5 LI 0 BV yg HBV yes Vin) I, = (Veps); conditions: Vag= 0 V; parameter T, August 1996 708 Rev 1.100