(iz HEWLETT PACKARD Schottky Barrier Diode Quads for Double Balanced Mixers Technical Data Features Small Size Eases Broad Band Designs Tight Match Improves Mixer Balance Improved Balance over Temperature * Rugged Design * Both Medium and Low Barrier Diodes Available s is P= iS ; | a 2 2 bs 1.27 (0.05) MAX. 4 0.64 {.025) MAX. + sng TF Outline E4 Cp = 0.07 pF diagonal Cp = 0.09 pF adjacent 58 5082-2231 5082-2233 5082-2263 5082-2271/72 5082-2277 5082-2279/80 5082-2291/92 5082-2294 5082-2830/31 ANGLE CUT 30-50 ALTERNATE 0.13 {.005) OIA. HOLE 1.5 (0.06) FROM END L {3333} +p + 1.40 (0.065) 1.14 (0.045) SQUARE O 0.10 0.38 (0.015) (0.004) MAX. TYP. 4+ > ii, t ~ t Outline C4 Cp = 0.05 pF diagonal Cp = 0.07 pF adjacent LID DIAMETER 2.59 (0,102) 2.06 {0.081)"| Outline H4 Cp = 0.16 pF diagonal Cp = 0.20 pF adjacent DIMENSIONS IN MILLIMETERS (INCHES) 3-80Description/ Applications These matched diode quads use a monolithic array of Schottky diodes interconnected in ring configuration. The relative proximity of the diode junction on the wafer assures uniform electrical characteristics and temperature tracking. These diodes are designed for use in double balanced mixers, phase detectors, AM modula- tors, and pulse modulators requiring wideband operation Maximum Ratings Junction Operating and Storage Temperature Range H4 Packaged Diodes ...........cccsccssssesssssssceeeesseeeersees -65C to +150C EEA ,.ccesseseoseneseeesoreecesons ...-65C to +125C C4 Packaged Diodes .........ccsscssserssscssserccsssceeseerenes -65C to +150C DC Power Dissipation ............cccceesesseteteneantes 75 mW per Junction Derated linearly to zero at maximum rated temperatures (measured in infinite heat sink at Tcasre = 25C). Soldering Temperature H4 oo aeceseccssessessesscecessesnecesseessessestseasssnsesesesseensensseeeses 260C for 10 sec. 235C for 10 sec. 220C for 10 sec. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. and small size. The low barrier diodes allow for optimum mixer noise figure at lower than conventional local oscillator levels. The wider dynamic range of the medium barrier diodes allows for better distortion performance. Selection Guide Frequency Package Outline Barrier | To 2 GHz 2-4 GHz 4-8 GHz 8-12 GHz | 12-18 GHz E4 Medium 5082-2830 | 5082-2277 | 5082-2277 Low Cost Low 5082-2831 H4 Medium 5082-2263 | 5082-2263 | 5082-2263 Hermetic Low 5082-2231 | 5082-2231 | 5082-2233 C4 Medium 5082-2291 | 5082-2291 | 5082-2292 | 5082-2294 | 5082-2294 Broadband Low 5082-2271 | 5082-2271 | 5082-2272 | 5082-2279 | 5082-2280 3-81Typical Electrical Characteristics at T, = 25C Parameters Maximum Measured | Maximum | Maximum Part Maximum | Capacitance Vp Dynamic Forward Number Capacitance | Difference | Difference | Resistance Voltage 5082- Package | Barrier Cy (pF) ACy (pF) AV, (mV) Rp (Q) Vp (V) 2231 H4 Low 0.60 0.10 20 12 0.25 2233 0.40 0.05 16 0.30 2263 Medium 0.40 0.05 16 0.45 2830 E4 0.5 Typ. 0.20 12 0.40 2831 Low 0.5 Typ. 0.20 12 0.25 2277 Medium 0.50 0.10 15 0.35 2271 C4 Low 0.60 0.10 12 0.25 2272 0.40 0.10 15 0.25 2279 0.25 0.05 16 0.30 2280 0.20 0.05 16 0.30 2291 Medium 0.60 0.10 12 0.35 2292 0.40 0.10 15 0.35 2294 0.20 0.05 16 0.45 Test Vp =0 Ip=5 mA Ip=1mA Conditions f=1MHz between Adjacent Leads Measured between Adjacent Leads Package the package body. The semi- resistance, Rp. These two terms Characteristics conductor is protected from are related by the equation The HP outline E4 package is designed for MIC, Microstrip, and Stripline use from de through X-Band. The leads provide a good continuity of transmission line impedance to the monolithic diode array. The leads are tin plated copper. The C4 subminiature package is a ceramic carrier whose gold plated kovar leads are brazed to the substrate for maximum package ruggedness. If the leads are to be formed, they should be restricted so the bend starts at least 0.25 mm (0.01 inch) from mechanical abrasion by epoxy. The H4 miniature package is a hermetic metal-ceramic device, which makes it ideal for applica- tions requiring high reliability. The leads are gold plated kovar. Outline H4 is capable of passing many of the environmental tests of MIL-STD-750. The applicable solderability test is reference 2031.1: 260C, 10 seconds. Dynamic and Series Resistance Schottky diode resistance may be expressed as series resistance, Rg, or as dynamic 3-82 Rp = Rg +R, where R; is the resistance of the junction. Junction resistance of a diode with DC bias is quite accurately calculated by R = 26/lg where Ip is the bias current in milliamperes. The series resistance is independent of current. The dynamic resistance is more easily measured. If series resistance is specified it is usually obtained by subtractingthe calculated junction resis- tance from the measured dynamic resistance. Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. HP defines this measurement as Cy, and it is equivalent to the capaci- tance of the diode by itself. The equivalent diagonal and adja- cent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capaci- tance is the capacitance between points A and B as shown in Figure 1. The diagonal capacitance is calculated using the following formula: C,xC, C,+C, Cy x Cy CplacoNaAL = G+G, 3 4 The equivalent adjacent capaci- tance is the capacitance between points A and C in Figure 1. This capacitance is calculated using the following formula: Cansacent = C1 + 1 + + C2 Cy Cy CS y \. s0b2-2292 100 100 $082-2280| YL | 5082-2272 qq w gq 10 n= bt E - z 5082-2294 a Cr = - 3 1.0 / 3 1.0 y o a < oF = = I / 5 5 2 01 4 2 oF} a 0 0 0.20 0.40 0.60 0.80 1.00 0 0.20 FORWARD VOLTAGE (V) Figure 2. Typical Forward Characteristics at T, = 25C. 0.40 0.60 0.80 1.00 FORWARD VOLTAGE (Vv) 3-83 Figure 3. Typical Forward Characteristics at T, = 25C.