AO4406AL 30V N-Channel MOSFET General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 13A (VGS = 10V) RDS(ON) < 11.5m (VGS = 10V) RDS(ON) < 15.5m (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D SOIC-8 D S S S G G D D D D G S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.1mH TC=25C B Power Dissipation TC=70C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. V A 100 IAR 22 A EAR 24 mJ 3.1 PD Junction and Storage Temperature Range 20 10.4 IDM C Units V 13 ID TC=70C Maximum 30 TJ, TSTG -55 to 150 Symbol t 10s Steady-State Steady-State W 2 RJA RJL Typ 31 59 16 C Max 40 75 24 Units C/W C/W C/W www.aosmd.com AO4406AL Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage On state drain current VDS=VGS ID=250A 1.5 VGS=10V, VDS=5V 100 TJ=55C 5 VGS=10V, ID=12A Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A 100 nA 1.9 2.5 V 9.5 11.5 14 17 12.5 15.5 m 1 V 4 A A m 45 0.75 S 610 760 910 pF 88 125 160 pF 40 70 100 pF 0.8 1.6 2.4 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11 14 17 nC Qg(4.5V) Total Gate Charge 5 6.6 8 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=12A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/s 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/s 6.4 8 9.6 VGS=10V, VDS=15V, RL=1.25, RGEN=3 4.4 ns 9 ns 17 ns 6 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. Rev 1 : Jun-09 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4406AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V VDS=5V 6V 80 5V 25 4.5V 20 ID (A) 60 ID(A) 7V 4V 15 40 10 3.5V 20 5 VGS=3V 0 0 1 2 3 4 125C 0 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 18 Normalized On-Resistance 1.8 16 RDS(ON) (m ) 25C VGS=4.5V 14 12 10 VGS=10V 8 VGS=10V ID=12A 1.6 1.4 17 VGS=4.5V 5 ID=10A 2 1.2 10 1 0.8 6 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 30 1.0E+02 ID=12A 1.0E+01 25 40 125C IS (A) RDS(ON) (m ) 1.0E+00 20 15 1.0E-01 1.0E-02 10 125C 25C 1.0E-03 25C 5 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4406AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=12A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0 60 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 50 TA=25C 40 10s TA=100C 30 TA=150C 20 TA=125C 100.0 ID (Amps) ID(A), Peak Avalanche Current 800 10.0 RDS(ON) limited 10s 100s 1ms 10ms 100ms 1.0 TJ(Max)=150C TA=25C 0.1 10 DC 10s 0.0 0 0.000001 0.1 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25C Power (W) 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4406AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=75C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4406AL Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com