General Description Features
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Max
31 40
59 75
RθJL 16 24
W
3.1
Maximum Junction-to-Lead Steady-State °C/W
Steady-State °C/W
Maximum Junction-to-Ambient
A D
Units
Maximum Junction-to-Ambient
A
TC=25°C
TC=70°C
Power Dissipation BPD
A
ID13
10.4
mJ
Avalanche Current
C
24 A
AO4406AL
30V N-Channel MOSFET
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
The AO4406AL uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
RDS(ON) < 15.5mΩ
VDS (V) = 30V
V
V±20Gate-Source Voltage
Drain-Source Voltage 30
t ≤ 10s °C/W
Parameter
RθJA
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
ID = 13A
RDS(ON) < 11.5mΩ
TC=25°C 2
TC=70°C
22
100Pulsed Drain Current
C
Continuous Drain
Current
Repetitive avalanche energy L=0.1mH
C
G
D
S
SOIC-8
G
S
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4406AL
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.5 1.9 2.5 V
I
D(ON)
100 A
9.5 11.5
T
J
=125°C 14 17
12.5 15.5 mΩ
g
FS
45 S
V
SD
0.75 1 V
I
S
4 A
C
iss
610 760 910 pF
C
oss
88 125 160 pF
C
rss
40 70 100 pF
R
g
0.8 1.6 2.4 Ω
Q
g
(10V) 11 14 17 nC
Q
g
(4.5V) 5 6.6 8 nC
Q
gs
1.9 2.4 2.9 nC
Q
gd
1.8 3 4.2 nC
t
D(on)
4.4 ns
t
r
9 ns
t
D(off)
17 ns
t
f
6 ns
t
rr
5.6 7 8 ns
Q
rr
6.4 8 9.6 nC
Rev 1 : Jun-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=12A
Reverse Transfer Capacitance
I
F
=12A, dI/dt=500A/µs
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=12A
V
GS
=4.5V, I
D
=10A
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=12A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=1.25Ω,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and l ead to ambi ent.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4406AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
6
8
10
12
14
16
18
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
Normalized On-Resistance
V
GS
=4.5V
I
D
=10A
V
GS
=10V
I
D
=12A
0
5
10
15
20
25
30
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=12A
25°C
125°C
0
20
40
60
80
100
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=3V
4V
6V
7V
10V
4.5V
5V
3.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4406AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8 10 12 14
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
V
DS
=15V
I
D
=12A
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
µ
s
0
10
20
30
40
50
60
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
(Note C)
I
D
(A), Peak Avalanche Current
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Power (W)
T
A
=25°C
10ms
100ms
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4406AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA
=75°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4406AL
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
t
on
t
d(off)
tf
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Alpha & Omega Semiconductor, Ltd. www.aosmd.com