Characteristics T4 series
2/15 DocID7699 Rev 9
1 Characteristics
Table 3. Absolute maximum rat in gs (Tj = 25 °C unless otherwise stated)
Symbol Parameter Value Unit
IT(rms) On-state rms current
(full sine wave) IPAK, DPAK,
TO-220AB Tc = 110 °C 4 A
ITSM Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 30 A
F = 60 Hz t = 16.7 ms 31
I²tI
²t value for fusing tp = 10 ms 5.1 A²s
dI/dt Critical rate of rise of on-state
current IG = 2 x IGT, tr ≤ 100 ns F = 120 Hz Tj = 125 °C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range - 40 to +150
- 40 to +125 °C
Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
Symbol Test cond iti on s Quadrant Value Unit
T405 T410 T435
IGT(1)
1. Minimum IGT is guaranteed at 5% of IGT max.
VD = 12 V, RL = 30 ΩI - II - III Max. 5 10 35 mA
VGT VD = 12 V, RL = 30 ΩI - II - III Max. 1.3 V
VGD VD = VDRM, RL = 3.3 k Ω, Tj = 125 °C I - II - III Min. 0.2 V
IH (2)
2. For both polarities of A2 referenced to A1
IT = 100 mA Max. 10 15 35 mA
ILIG = 1.2 IGT I - III Max.102550mA
II Max. 15 30 60
dV/dt (2) VD = 67% VDRM, gate open Tj = 125 °C Min. 20 40 400 V/µs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs
Tj = 125 °C Min.
1.8 2.7
A/ms(dV/dt)c = 10 V/µs 0.9 2.0
(without snubber) 2.5