TA8470AF/AFG
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TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TA8470AF/AFG
3 PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC
TA8470AF/AFG is a low-noise type 3 Phase Bi-direction Motor
Driver IC, developed as a 3 Phase Hall motor driver for VTRs
(capstan, cylinder), etc.
FEATURES
z Operating Voltage Range : VCC = 7~17 V
z Output Current : IO (MAX.) = 1.2 A
z Three Phase Bi-direction, current control mode
z Low Noise (Quasi Sinusoidal Drive)
z Built-in FG Amplifier
z Low Output Impedance with B Class Push-Pull Driver,
Capable of Short Brakes (Dumping Brakes)
z Position Detecting Circuit (Hall Input) with High Sensitivity
: VH = 50 mVp−p
z Enclosed in Space-saving Power Flat Package
z Built-in Thermal Shutdown Circuit
Weight : 0.79 g (Typ.)
TA8470AFG:
The TA8470AFG is a Pb-free product.
The following conditions apply to solderability:
*Solderability
1. Use of Sn-37Pb solder bath
*solder bath temperature = 230°C
*dipping time = 5 seconds
*number of times = once
*use of R-type flux
2. Use of Sn-3.0Ag-0.5Cu solder bath
*solder bath temperature = 245°C
*dipping time = 5 seconds
*the number of times = once
*use of R-type flux
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BLOCK DIAGRAM
FUNCTION (VIN− = 5 V)
MODE FRS VIN OUTPUT
CW L VIN+ > 2.3 V
La = Ha − Hb
Lb = Hb − Hc
Lc = Hc − Ha
CCW H VIN+ > 2.3 V
La = −(Ha − Hb)
Lb = −(Hb − Hc)
Lc = −(Hc − Ha)
Standby M ― Mid-point potentia (Note)
Brake ― V
IN+ < 2.3 V Mid-point potentia (Note)
Note: Low-impedance Mode
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1. Control input circuit
In the case of output current feedback to the motor, connect feedback resistance to RF pin (10) and feed it back
to NF pin (8).
The feedback amount can be adjusted by connecting a resistor between pin (10) and (8) pin.
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2. FG amplifier and schmitt circuit
The FG amplifier is stored with internal reference voltage (2.5 V), making it possible to directly input the FG
signal from pattern FG. The Schmitt circuit stored within can output wave-shaped FG signals.
FGO is in push-pull mode with low impedance.
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3. FRS section
Voltage applied to FRS pin (15) makes it possible to select forward, reverse, and stop modes. For the
relationships between FRS, control input, and output, refer to the item on these functions.
The relationship between input voltage (VFRS) and input current (IFRS) to the DRS pin (15) is shown as a
feature in the following graph :
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ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage VCC 18 V
Output Current IO 1.2 A
IFGO 12
FG Output Current
IFGS 14
mA
1.0 (Note 1)
3.2 (Note 2)
Power Dissipation PD
5.8 (Note 3)
W
Operating Temperature Topr −30~75 °C
Storage Temperature Tstg −55~150 °C
Note 1: Without heat sink
Note 2: 50 × 50 × 1 mm Fe board mounting
Note 3: Infinite heat sink mounting
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ELECTRICAL CHARACTERISTICS (VCC = 12 V, VIN− = 5 V, Ta = 25°C)
CHARACTERISTIC SYMBOL
TEST
CIR−
CUIT
TEST CONDITION MIN TYP. MAX UNIT
ICC 1 1 Output Open, FRS = 2.5 V ― 12.5 28
ICC 2 1 Output Open, FRS = GND ― 14 28
Supply Current
ICC 3 1 Output Open, FRS = 5 V ― 14 28
mA
Input Voltage Range VCIN 2 GND ― VCC
−2.5 V
Control Output Voltage
Gain GVCO 2 VH = 25 mVp−p 7.5 13 18 dB
Input Current ICIN 2 VIN+ = GND
(Sink Current) ― 0.2 5 µA
Speed
Control
Circuit
Internal Reference Voltage
1 Vref 1 ― 2.15 2.30 2.45 V
Common Mode Inoput
Voltage Range VCMRH 3 1.5 ― 5 V
Input Current IH 3 VINH = 2.5 V ― 0.2 3 µA
Position
Detecting
Circuit
Input Voltage Gain GVHO 4 VIN+ = 5 V 40 47 51 dB
Upper Side Vsat (U) 5 IO = 1.0 A ― 1.2 1.9
Saturation
Voltage Lower Side Vsat (L) 5 IO = 1.0 A ― 0.7 1.5
V
Quiescent Voltage VOS 5 VIN+ = 1.0 V 5.0 5.5 7.0 V
Output
Circuit
Quiescent Voltage
Difference VOOF 5 Each Output to Output ― 25 50 mV
Open Loop Voltage Gain GVFG ― f
FG = 1 kHz ― 70 ― dB
Band Width fFG 6 DC ― 50 kHz
FGO Output Amplitude VFGO 6 IFGO = 5 mA 1.0 2.1 4 V
FGS Output Saturation
Voltage Vsat (FGS) 6 IFGS = 4 mA ― 0.15 0.25 V
Internal Reference Voltage
2 Vref 2 6 2.1 2.5 2.9 V
FG Amp
Schmitt Circuit Hysteresis
Width VHYS 6 ― 100 250 mV
FWD Operating Voltage VFWD 5 4.0 ― V
CC V
Stop Operating Voltage VSTOP 5 1.9 ― 3.1 V
Rotation
Direction
Control
Circuit Reverse Operating
Voltage VREV 5 0 ― 1.3 V
Thermal Shutdown Operating
Temperature TSD ― 150 ― ― °C
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CHARACTERISTICS OF OUTPUT AMP SATURATION VOLTAGE
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TEST CIRCUIT 1
TEST CIRCUIT 2
TEST CIRCUIT 3
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TEST CIRCUIT 4
TEST CIRCUIT 5
TEST CIRCUIT 6
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APPLICATION CIRCUIT
Note 1: All output currents flow into RF pins ; therefore, be sure to provide GND separately from other GND lines.
Care should be taken not to have common impedance among other GND lines, either, in making pattern
designs (especially for Hall Sensor GND line).
Note 2: Utmost care is necessary in the design of the output, VCC, VM, and GND lines since the IC may be destroyed
by short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by
short-circuiting between contiguous pins.
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PACKAGE DIMENSIONS
HSOP20−P−450−1.00 Unit : mm
Weight : 0.79 g (Typ.)
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Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified
for explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for
explanatory purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. Application Circuits
The application circuits shown in this document are provided for reference purposes only. Thorough
evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerations
Notes on handling of ICs
[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case
of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location,
are required.
[3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into
the design to prevent device malfunction or breakdown caused by the current resulting from the
inrush current at power ON or the negative current resulting from the back electromotive force at
power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is
unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
[4] Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
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Points to remember on handling of ICs
(1) Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal
shutdown circuits operate against the over temperature, clear the heat generation status
immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
(2) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ)
at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown.
In addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
(3) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s
power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the
device’s motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid
this problem, take the effect of back-EMF into consideration in system design.
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