R07DS0433EJ0400 Rev.4.00 Page 1 of 7
Jun 07, 2011
Preliminary Datasheet
2SJ496
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A)
• 4 V gate drive devices .
• Large current capacitance
ID = –5 A
Outline
RENESAS Package code:
PRSS0003DC-A
(Package name:
TO-92 Mod)
1. Source
2. Drain
3. Gate
D
G
S
321
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID –5 A
Drain peak current ID (pulse) Note 1 –20 A
Body to drain diode reverse drain current IDR –5 A
Avalanche current IAP Note 3 –5 A
Avalanche energy EAR Note 3 2.14 mJ
Channel dissipation Pch Note 2 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 100 μs, duty cycle ≤ 10%
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
R07DS0433EJ0400
(Previous: REJ03G0870-0300)
Rev.4.00
Jun 07, 2011
2SJ496 Preliminary
R07DS0433EJ0400 Rev.4.00 Page 2 of 7
Jun 07, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 μA, VDS = 0
Zero gate voltage drain current IDSS — — –10 μA VDS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0
Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –5 V
RDS (on) — 0.12 0.16 Ω I
D = –2.5 A, VGS = –10 V Note 4 Static drain to source on state resistance RDS (on) — 0.17 0.24 Ω I
D = –2.5 A, VGS = –4 V Note 4
Forward transfer admittance |yfs| 3 5 — S ID = –2.5 A, VDS = –10 V Note 4
Input capacitance Ciss — 600 — pF
Output capacitance Coss — 290 — pF
Reverse transfer capacitance Crss — 80 — pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 10 — ns
Rise time tr — 25 — ns
Turn-off delay time td (off) — 95 — ns
Fall time tf — 55 — ns
VGS = –10 V
ID = –2.5 A
RL = 12 Ω
Body to drain diode forward voltage VDF — –1.0 — V IF = –5 A, VGS = 0
Body to drain diode reverse recover y
time trr — 65 — ns IF = –5 A, VGS = 0
diF/dt = 50 A/μs
Note: 4. Pulse test
2SJ496 Preliminary
R07DS0433EJ0400 Rev.4.00 Page 3 of 7
Jun 07, 2011
Main Characteristics
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2–4–6–8
–10
–10
0
–2
–4
–6
–8
0 –1–2–3–4–5
Tc = 75°C
1.6
0
0.4
0.8
1.2
0 50 100 150 200
V
DS
= –10 V
Pulse Test
–10 V
–5 V
–4 V
–3 V
–2.5 V
–3.5 V
V
GS
= –2 V
Ta = 25°C
Pulse Test
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
–30
–3
–10
–0.03
–1
–0.3
–0.1
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100
–100
Ta = 25°C
PW = 10 ms (1 shot)
DC Operation
1 ms
10 μs100 μs
Operation in
this area is
limited by R
DS (on)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0 –4 –8 –12 –16 –20
Pulse Test
I
D
= –5 A
–2 A
–1 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3 –10 –30–0.1 –3–1 –100
1
0.5
V
GS
= –4 V
–10 V
Pulse Test
–25°C
25°C
2SJ496 Preliminary
R07DS0433EJ0400 Rev.4.00 Page 4 of 7
Jun 07, 2011
0.5
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
0.1
0.2
0.3
0.4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
I
D
= –5 A
I
D
= –5 A
–1 A, –2 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(A)
20
10
2
5
0.5
1
0.2
–0.1 –0.2 –0.5 –1 –5–2 –10
Tc = –25°C
75°C
V
DS
= –10 V
Pulse Test
25°C
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2 –0.5 –1 –2 –5 –10
500
200
50
100
20
5
10 di / dt = 50 A / μs
V
GS
= 0, Ta = 25°C
0 –10 –20 –30 –40 –50
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
200
500
100
50
20
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
0
0
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
816243240
V
DS
V
GS
1000
300
100
10
30
3
1–0.2 –0.5 –1 –2 –5 –10
–0.1
tf
tr
td(off)
td(on)
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
V
DD
= –10 V
–25 V
–50 V
V
DD
= –50 V
–25 V
–10 V
–10 V
V
GS
= –4 V
–2 A
–1 A
–5 A
V
GS
= –10 V, V
DD
= –30 V
PW = 5 μs, duty ≤ 1 %
2SJ496 Preliminary
R07DS0433EJ0400 Rev.4.00 Page 5 of 7
Jun 07, 2011
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
2.5
25 50 75 100 125 150
0
0.5
1.0
1.5
2.0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= –5 A
V
DD
= –25 V
duty < 0.1 %
Rg ≥ 50 Ω
–10
0
–2
–4
–6
–8
0 –0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
–5 V V
GS
= 0, 5 V
–10 V
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
1
0.3
0.1
0.01
0.003
0.03
0.001
0.00001 0.010.0010.0001 0.1 1 10 100 1000 10000
Ta = 25°C
D = 1
0.5
0.1
0.2
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
L
2SJ496 Preliminary
R07DS0433EJ0400 Rev.4.00 Page 6 of 7
Jun 07, 2011
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Waveform
Vin Monitor
D.U.T.
Vin
10 V
R
L
Vout
Monitor
50 Ω
V
DD
= –30 V
2SJ496 Preliminary
R07DS0433EJ0400 Rev.4.00 Page 7 of 7
Jun 07, 2011
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.4 3.8 ± 0.4
8.0 ± 0.5
0.7
2.3 Max
10.1 Min
0.5 Max
1.27
2.54
0.65 ± 0.1
0.75 Max
Previous Code
PRSS0003DC-A
TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35gSC-51
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
TO-92 Mod
Ordering Information
Part Name Quantity Shipping Container
2SJ496TZ-E 2500 pcs Taping
Notes: 1. For some grades, production may be terminated. Please contact the Renesas sales office to check the state
of production before ordering the product.
2. Leads is forming applied as following figure.
12.7
28.0 max.
19.0
16.0
18.0
9.0
6.35
4.0
12.7
2.5 2.5
Unit: mm
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