Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM (512 x 8) 828147 82S147A FEATURES Address access time: 75ns max input loading: -1501A max One chip enable input On-chip address decoding No separate fusing pins Fully TTL compatible Outputs: 3-State @ Unprogrammed outputs are Low level PACKAGE APPLICATIONS DESCRIPTION ORDER CODE | pfacNaron Prototyping/volume production fypingivolume P 20-pin Ceramic DIP g2si47/BRA, | eoipy-to0 Sequential controllers (300mil-wide) 82S147A/BRA @ Microprogramming @ Hardwired algorithms Control store @ Random logic @ Code conversion ABSOLUTE MAXIMUM RATINGS DESCRIPTION The 828147 and 8281474 are field-programmable, which means that custom patterns are immediately available by following the Philips Generic | fusing procedure. The standard devices are supplied with all outputs at logical Low. Outputs are programmed to a logic High level at any specified address by fusing the Ni-Cr link matrix. The 828147 and 8281474 include on-chip decoding and one chip enable input for ease of memory expansion, and feature 3-State outputs for optimization of word expansion in bused organizations. ORDERING INFORMATION " MIL-STD 1835 or Appendix A of 1995 Military Data Handbook SYMBOL PARAMETER RATING UNIT Veo Supply voltage +7 Voc vi Input voltage +5.5 Vpc Vo Output voltage Off-State +5.5 Voc Ta Operating temperature range -55 to +125 C Tsta Storage temperature range -65 to +150 Ke PIN CONFIGURATION BLOCK DIAGRAM soo TT AoDREsS =| 1:64 | | 64 x 64 MATRIX Veo LINES | DECODER! | As Ago_l __ ty A7 Ag he ! + As As 1:8 | 1:8 7 4:8 | 1:6 | 1:8 7 1:8 | 1:6 | 1:8 a6 MUX | MUX | MUX | MUX | MUX | MUX | MUX | MUX cE AT 08 pt [| {| | ft ff O7 tEO | J 8 3-STATE DRIVERS 06 Os Pee et tb Gb 04 O2 03 OF OF OG 7 Og OUTPUT LINES November 10, 1987 1080 853-0261 F00357Philips Semiconductors Military Bipolar Memory Products Product specification 828147 4K-bit TTL bipolar PROM (512 x 8) 82S147A DC ELECTRICAL CHARACTERISTICS -55C < Ta < +125C, 4.5V < Voc <5.5V SYMBOL PARAMETER TEST CONDITIONS? 2 LIMITS UNIT Min | Typ | Max Input voltage Vic Low 0.8 v Vin High 2.0 v Vik Clamp Voc = 4.5V, || = -18mA -0.8 1.2 v Output voltage Veco = 4.5V, CE = Low VoL Low lo = 9.6mA 0.5 v Vou High lo =-2mA 2.4 v input current Voc = 5.5V Iie Low V, = 0.45V -150 pA tin High V, = 5.5V 40 pA Output current Voc = 5.5V loz Hi-Z state TE = High, Vo = 5.5V 40 yA CE = High, Vo = 0.5V -40 nA log Short circuit Voc = 5.5V, CE = Low, Vg = OV 15 -85 mA Supply current loc | CE = High, Voc = 5.5V | } 125 | 160 | ma Capacitance CE = High, Voc = 5.0V Cin Input Vi =2.0V 5 10 pF Cour Output Vo = 2.0V 8 13 pF AC ELECTRICAL CHARACTERISTICS -58C < Ty < +125C, 4.5V < Voc <5.5V SYMBOL | PARAMETER TO FROM 828147 82S147A UNIT Min Typ> Max Min Typ Max taa Access time4 Output Address 45 75 45 55 ns toe Access time* Output Chip Enable 20 45 20 30 ns tcp Disable time Output Chip Disable 20 45 20 30 ns NOTES: 1. All voltage values are with respect to network ground terminal. 2. Positive current is defined as into the terminal referenced. 3. Duration of short circuit should not exceed 1 second. 4. Tested at an address cycle time of Ips. , 5. Typical values are at Voc = 5V, Ta = +25 C. 6. Guaranteed, but not tested. November 10, 1987 1081Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM (512 x 8) 825147 828147A TEST LOAD CIRCUITS VOLTAGE WAVEFORMS | 27 w Kaw 3 Vv ee peatene Nw u 0.3V 0.3V ov Oo] Ao TTHL(tfh runt) 4 be Om AY 5.0V Oo) A2 tTLH(tr) trunen >| Om] A Ry posmmve 27V 27v Sov Om Ag Wy PULSE vu vm Om] As DUT | 0.3 ROSY gy om Ag og}-o (INCLUDES SCOPE w Ro Cy AND JIG Om az CAPACITANCE) i Pulse Definiti Om] Ag nput Pulse Definitions O-m TE = GND + INPUT PULSE CHARACTERISTICS Vu Rep. Rate | Pulse Width tree tre 1.5V 1MHz 500ns <5ns <5ns NOTE: Ry = 4700, Ap = 1K. Cy = S0pF TIMING DIAGRAMS 3.0 ADDRESS x VM ov cE ov YOu VM Vou Le TAA Vu = 1.5V 3.0V ADDRESS ov Hi-Z CE 3.0V ov YOu Hi-Z You YOu Vor November 10, 1987 1082