FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes UMN1N / UMP1N / UMN11N / UMP11N
Switching diode
FMN1 / FMP1 / IMN10 / IMN11 / IMP11
UMN1N / UMP1N / UMN11N / UMP11N
zApplication
Ultra high speed switching
zFeatures
1) A wide variety of configurations are available.
(UM D5, UMD6 , SMD5, SMD6)
2) Multiple diodes in one small surface mount package.
3) Diode characteristics are matched in the package.
zConstruction
Silicon epitaxial planar
z
zz
zExternal dimensions (Uni ts : mm )
2.8±0.2
1.6
2.9±0.2
1.9±0.2
0.95
0.3 0.15
0∼0.1
1.1
0.8±0.1
0.95
0.3∼0.6
−0.1
+0.2
+0.1
−0.05 +0.1
+0.2
−0.1
−0.06
0∼0.1
2.0±0.2
1.3
±
0.1
0.65 0.65
1.25
±
0.1
2.1±0.1
+0.1
−0.05
0.2 0.15±0.05
0.1Min.
0.7
0.9±0.1
FMN1 / FMP1 UMN1N / UMP1N
IMN10 / IMN11 / IMP11 UMN11N / UMP11N
2.8±0.2
1.6
2.9±0.2
1.9±0.2
0.95
0.3 0.15
0∼0.1
1.1
0.8±0.1
0.95
0.3∼0.6
−0.1
+0.2
+0.1
−0.05 +0.1
+0.2
−0.1
−0.06
0∼0.1
2.0±0.2
1.3
±
0.1
0.65 0.65
1.25
±
0.1
2.1±0.1
+0.1
−0.05
0.2 0.15±0.05
0.1Min.
0.7
0.9±0.1
EIAJ : SC-74A
JEDEC : −
ROHM : SMD5 EIAJ : SC-88A
JEDEC : SOT-353
ROHM : UMD5
EIAJ : SC-74
JEDEC : SOT-457
ROHM : SMD6
∗∗
∗∗
FMP1 : P1
FMN1 : N1
∗Marking
UMP1N : P1
UMN1N : N1
∗Marking
EIAJ : SC-88
JEDEC : SOT-363
ROHM : UMD6
UMP11N : P11
UMN11N : N11
∗Marking
IMN11 : N11
IMP11 : P11
IMN10 : N10
∗Marking
(All leads have the same dimensions.) (All leads have the same dimensions.)
(All leads have the same dimensions.)
(All leads have the same dimensions.)
z
zz
zCircuits
FMN1 FMP1 IMN10
SMD5 / SMD6 Package
UMD5 / UMD6 Package
UMN1N UMP1N UMN11N UMP11N
IMN11 IMP11
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes UMN1N / UMP1N / UMN11N / UMP11N
z
zz
zAbsolute maximum ratings (Ta=25°C)
∗1 Not to exceed 200mW per element.
∗2 Not to exceed 120mW per element.
Type V
R (
V) I
FM (
mA) Pd (mW)
UMN1N 80 80 80 25 0.25 150
FMP1
UMP1N 80 80 80 25 0.25 150 −55~+150
IMN10 80 80 300 100 4 150 −55~+150
80 80 300 100 4 150 −55~+150
80 80 300 100 4 150 −55~+150
150/80
150/80
−55~+150
FMN1
300 ∗1
150 ∗2
150 ∗2
UMN11N
IMN11
UMP11N
IMP11
V
RM (
V) (1µs) (TOTAL)
I
O (
mA) Isurge
(
A)
Peak
reverse
voltage
DC
reverse
voltage Tj
(°C)
Tstg
(°C)
Peak
forward
current
Mean
rectifying
current
Surge
current Power
dissipation Junction
temperature Storage
temperature
z
zz
zElectrical characteristics (Ta=25°C)
Type Cond.
V
F
(
V)
Max. Cond. Cond. Max.
Cond. C
T
(
pF)
Max.Max.
I
F
(
mA)
V
R
(
V) I
F
(
mA)
V
R
(
V)
f (MHz)
V
R
(
V)
FMN1
UMN1N 0.9 5 0.1 70 3.5 6 1 4 6 5
FMP1
UMP1N 0.9 5 0.1 70 3.5 6 1 4 6 5
IMN10 1.2 100 0.1 70 3.5 6 1 4 6 5
1.2 100 0.1 70 3.5 6 1 4 6 5
1.2 100 0.1 70 3.5 6 1 4 6 5
t
rr
(ns)
I
R
(µ
A)
UMN11N
IMN11
UMP11N
IMP11
Forward voltage Reverse recovery timeReverse current
Capacitance between terminals
z
zz
zElectrical characteristic curves (Ta=25°C)
0
0
125
100
75
50
25
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
POWER DISSIPATION : P
d
/ P
dMax. (%)
Fig.1 Power reduction curve
85°C
0
Ta=25°C
50
°C
−30°C
0.1
0.2
0.5
1
2
5
10
20
50
0.2 0.4 0.6 0.8 1.0 1.2
0
°C
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
Fig.2 Forward characteristics
(P Type)
0
Ta=100°C
75°C
50°C
25°C
0°C
−25°C
1 000
100
10
1.0
0.1
0.01
10 20 30 40 50
REVERSE CURRENT : I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Reverse characteristics
(P Type)
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes UMN1N / UMP1N / UMN11N / UMP11N
Ta=25°C
85°C
0
50
°C
−30°C
0.1
0.2
0.5
1
2
5
10
20
50
0.2 0.4 0.6 0.8 1.0 1.2
0
°C
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.4 Forward characteristics
(N Type)
REVERSE CURRENT : IR (nA)
REVERSE VOLTAGE : VR (V)
Fig.5 Reverse characteristics
(N Type)
0.01
100
1000
10
0.1
1
10 20 30 40 80706050
0
Ta=100°C
75°C
50°C
25°C
−25°C
0°C
0
0
2
246810121416
N Type
4
Ta=25°C
f=1MHz
P Type
CAPACITANCE BETWEEN TERMINALS : C
T (
pF)
REVERSE VOLTAGE : V
R
(V)
Fig.6 Capacitance between
terminals characteristics
P Type
0
0
N Type
Ta=25°C
V
R
=
6V
10
9
8
7
6
5
4
3
2
1
12345678910
REVERSE RECOVERY TIME : t
rr
(ns)
FORWARD CURRENT : I
F
(mA)
Fig.7 Reverse recovery time
PULSE GENERATOR
OUTPUT 50ΩSAMPLING
OSCILLOSCOPE
50Ω
5kΩ
0.01µF
100ns
I
R
0.1I
R
t
rr
OUTPUT
0
INPUT
D.U.T.
Fig.8 Reverse recovery time (trr) measurement circuit
