SILICON EPITAXIAL i Trielectronics NPN TRANSISTOR Semelab Limited 2N5886 e Hermetic TO3 Metal Package. e Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise stated) VcCBO Collector Base Voltage 80V VCEO Collector Emitter Voltage 80V VEBO Emitter Base Voltage 5V Ic Continuous Collector Current 25A IB Base Current 7.5A PD Total Power Dissipation at To = 25C 200W Derate Above 25C 1.15W/PC Ty Junction Temperature Range -65 to +200C Tstg Storage Temperature Range -65 to +200C THERMAL PROPERTIES Symbols | Parameters Min. | Typ. |Max. |Units Rajc Thermal Resistance, Junction To Case 0.875 | CAV Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. A subsidiary of TT electronics plc. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8830 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http:/Awww.semelab-tt.com Issue 1 Page 1 of 1SILICON EPITAXIAL i Trielectronics NPN TRANSISTOR Semelab Limited 2NS5886 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) Symbols Parameters Test Conditions Min. | Typ | Max. | Units V a) Collector-Emitter |- = 50mA In = 0 (BR)CEO Breakdown Voltage C B 80 V Vcp = 80V Vpp=-1.5V 1.0 ICEX Collector Cut-Off Current Tc = 150C 10 ICEO Collector Cut-Off Current Vcp = 40V Ip = 0 2.0 mA ICBO Collector Cut-Off Current Vcp = 80V IF =O 1.0 lEBO Emitter Cut-Off Current Veg = 2V Ic =0 1.0 Ic =3A Vc =4V 35 hee Fonward-current transfer lc = 104 Vee =4V 20 100 Ic =25A Vcp=4v 4 VBE(on) Base-Emitter On Voltage Ic = 10A Vcp=4v 1.5 V a) Base-Emitter Saturation |- = 25A In = 6.25A BE(sat) Voltage Cc B 2.5 V Vce(sat) Collector-Emitter Saturation | ' = 124 Ip = 1.5A 1.0 sa Voltage Ic = 25A Ip = 6.254 4 DYNAMIC CHARACTERISTICS ic = 3A Vcp=4V fae) Small-Signal Current Gain 20 f = 1.0KHz lp =0 Vcp = 10V Cobo Output Capacitance 500 pF f = 1.0MHz Ic = 1.0A Vc = 10V tT Transition Frequency 4 MHz f = 1.0MHz SWITCHING CHARACTERISTICS tr Rise Time 0.7 Us : Vcc = 30V, Ic =10A ty Storage Time 1.0 Us lpi =Ipp = 1.0A tf Fall Time 0.8 Us Notes (1) Pulse Width < 300us, 6 < 2%. (2) Guaranteed by design, not production tested. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8830 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http:/Awww.semelab-tt.com Issue 1 Page 2 of 2SILICON EPITAXIAL Trielectronics NPN TRANSISTOR Semelab Limited 2N5886 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05 om = WwW ano (0.25) 45 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) aaa 3.43 (0.135) hs A [| 4 a s4| _ ce Co RE 8 a= FE 2 so) ae so < 8B on 2 oc 8 at Ss aso o 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Document Number 8830 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http:/Awww.semelab-tt.com Issue 1 Page 3 of 3