2SB1121 / 2SD1621
No.1787-1/4
Applications
•Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
•Adoption of FBET, MBIT processes.
•Low collector-to-emitter saturation voltage.
•Large current capacity and wide ASO.
•Fast switching speed.
•Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SB1121
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)30 V
Collector-to-Emitter Voltage VCEO (--)25 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)2 A
Collector Current (Pulse) ICP (--)5 A
Collector Dissipation PC500 mW
Mounted on a ceramic board (250mm
2
✕0.8mm)
1.3 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Marking 2SB1121 : BD
2SD1621 : DD
www.semiconductor-sanyo.com/network
Ordering number : EN1787B
31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/3045MW, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
’
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
’
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB1121 / 2SD1621
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Driver Applications
http://semicon.sanyo.com/en/network
2SB1121 / 2SD1621
No.1787-2/4
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)20V, IE=0A (--)0.1 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA
DC Current Gain hFE1V
CE=(--)2V, IC=(--)100mA 100* 560*
hFE2V
CE=(--)2V, IC=(--)1.5A 65
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)50mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (32)19 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1.5A, IB=(--)75mA
(--0.35)0.18
(--0.6)0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1.5A, IB=(--)75mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)30 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)25 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V
Turn-ON T ime ton See specified Test Circuit. (60)60 ns
Storage T ime tstg See specified Test Circuit. (350)550 ns
Fall T ime tfSee specified Test Circuit. (25)25 ns
*: The 2SB1121 / 2SD1621 are classified by 100mA hFE as follows:
Rank R S T U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7007B-004
VR
RB
12V--5V
++
50Ω
INPUT
OUTPUT
24Ω
100μF 470μF
PW=20μs
IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed)
IB1
D.C.≤1%
IB2
2SB1121 / 2SD1621
No.1787-3/4
IC -- VCE
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- mV
IC -- VCE
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- mV
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
fT -- IC
Collector Current, IC -- mA
Gain-Brandwidth Product, fT -- MHz
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
--2.0
--1.2
--0.8
--0.4
--1.6
00 --200 --400 --1000--800--600
IB=0mA
ITR08868
2SB1121
From top
--250mA
--200mA
--150mA
--100mA
--2mA
--8mA
--6mA
--4mA
--10mA
--20mA
--30mA
--50mA
--40mA
2.0
1.2
0.8
0.4
1.6
00 200 400 1000800600
IB=0mA
ITR08869
2mA
8mA
6mA
4mA
10mA
20mA
30mA
50mA
40mA
2SD1621
0.1
5
7
7
1.0
7
10
5
3
3
2
5
3
2
1.0 10
25 57357323
ITR08876
23 5
10 23 235
100 77 1000
1000
100
10
2
7
5
7
5
3
2
3
ITR08872
2SB1121
2SD1621
2
5
7
3
2
5
7
3
2
5
7
3
1.0
0.1
0.01
10
23 557 723 57
0.10.01 23 5
1.0 ITR08874
100
1.0 10
7
3
5
2
10
2
2735 523
ITR08873
2SB1121
2SD1621
2SB1121
2SD1621
2SB1121 / 2SD1621
VCE=10V
For PNP, minus sign is omitted
2SB1121 / 2SD1621
IC / IB=10
For PNP, minus sign is omitted
2SB1121 / 2SD1621
f=1MHz
For PNP, minus sign is omitted
10ms
1ms
100ms
DC operation
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm
2
✕0.8mm)
For PNP, minus sign is omitted
2SB1121 / 2SD1621
2
3
5
100
7
2
3
5
10
7
5
7
1000
0.01 0.1 23 5723 5723 57 1.0 10
ITR08871
2SB1121
2SD1621
0 0.2 0.4 0.6 0.8 1.21.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
ITR08870
2SB1121
2SD1621
2SB1121 / 2SD1621
VCE=2V
For PNP, minus sign is omitted
2SB1121 / 2SD1621
VCE=2V
For PNP, minus sign is omitted
ICP=5A
IC=2A
2SB1121 / 2SD1621
No.1787-4/4
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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PS
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PC -- Ta
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
0
1.8
1.6
1.4
1.2
0.8
1.0
0.6
0.4
0.2
0 20 40 60 100 120 16014080
ITR08875
Mounted on a ceramic board (250mm
2
✕0.8mm)
No heat sink
2SB1121 / 2SD1621
