Silicon Beamless Schottky Diodes Features For Microwave MIC Assembly & Automated High Volume Manufacturing Lines Mechanically Rugged Design Three Barrier Heights for Optimized Mixer Performance Wide Product Range: Series Pair, Ring, Bridge, and 8 Diode Ring Description The Beamless Diode family is designed for a high degree of device reliability in both commercial and industrial uses. They are designed to offer the utmost in performance as well as achieving price sensitive cost targets for commercial systems. Use in ring or crossover designs in double balanced mixer designs Virtually any LO requirement can be met with choice of barrier height. 100% DC tested on wafer. Available in film frame or waffle pack. Electrical Specifications at 25C Part Number VF IF = 1.0 mA (mV) Band Barrier S S S X X X S S S Min. Max. Low Medium High Low Medium High 200 300 500 250 325 550 260 400 600 310 425 650 Low Medium High 200 300 500 260 400 600 VF IF = 1.0 mA (mV) CJ1, 2 VR = 0V, f = 1 MHz (pF) RS IF = 5 mA (Ohms) VB (V)@ 10 A Min. Outline Drawing Number Min. Max. 10 10 10 10 10 10 0.3 0.3 0.3 0.15 0.15 0.15 0.5 0.5 0.5 0.30 0.30 0.30 5.0 5.0 5.0 8.0 8.0 8.0 2 3 4 2 3 4 551-002 551-002 551-002 551-002 551-002 551-002 10 10 10 0.3 0.3 0.3 0.5 0.5 0.5 5.0 5.0 5.0 2 3 4 551-004 551-004 551-004 Ring Quad3 DMF3926-000 DME3927-000 DMJ3928-000 DMF3942-000 DME3943-000 DMJ3944-000 Bridge Quad3 DMF3929-000 DME3930-000 DMJ3931-000 1. CJ represents total capacitance. 2. Maximum CJ unbalance @ 0V, 1 MHz = .025 pF. 3. Matching Criteria VF @ 1 mA 15 mV available for matched sets. 3-8 Alpha Industries * * Fax * E-mail * Visit our web site: Silicon Beamless Schottky Diodes Electrical Specifications (Continued) Part Number Band VF IF = 1.0 mA (mV) Drive Level VF IF = 1.0 mA (mV) CJ1, 2 VR = 0V, f = 1 MHz (pF) RS IF = 5 mA (Ohms) VB (V)@ 10 A Outline Drawing Number Min. Max. Max. Min. Max. Max. Min. Low Medium High 200 300 500 260 400 600 10 10 10 0.3 0.3 0.3 0.5 0.5 0.5 5 5 5 2 3 4 551-012 551-012 551-012 S S S Low Medium High 200 300 500 260 400 600 10 10 10 0.3 0.3 0.3 0.5 0.5 0.5 5.0 5.0 5.0 2 3 4 551-056 551-056 551-056 S-X S-X S-X Low Medium High 400 600 1000 520 800 1200 15 15 15 0.15 0.15 0.15 0.3 0.3 0.3 16 16 16 4 6 8 556-020 556-020 556-020 Series Pair3 DMF3932-000 DME3933-000 DMJ3934-000 S S S Back to Back Ring Series Pair3 DMF3935-000 DME3936-000 DMJ3937-000 OctoQuad Ring4 DMF3938-000 DME3939-000 DMJ3940-000 1. 2. 3. 4. CJ represents total capacitance. Maximum CJ unbalance @ 0V, 1 MHz = .025 pF. Matching Criteria VF @ 1 mA 15 mV available for matched sets. Matching criteria VF @ 1 mA 20 mV available for matched sets. Maximum Ratings TSTG: TOP: Pdiss CW: IMAX: PIV: Packing Methods 1. Vacuum release gel-pack. -65C to +175C -65C to +150C 75 mW/junction 50 mA Volts VB rating 2. Wafer on film frame (rejects are marked with ink). - Diced, ready for pick and place - Unsawn whole wafer, 7 mil thick, max. Assembly and Handling Procedure The process flow for assembly is: Wire Bonding 1. Die attach using nonconductive epoxy Two methods can be used to connect wire, ribbon, or wire mesh to the chips: 2. Wire bond 3. Encapsulation - nonconductive epoxy Thermocompression Ballbonding Die Attach Methods All leadless chips are compatible with both eutectic and conductive epoxy die attach methods. Eutectic processes use Sn-Au or Sn-Pb solder. Non conductive die attach is recommended. Alpha Industries * * Fax Alpha recommends use of pure gold wire. * E-mail * Visit our web site: 3-9