3–8 Alpha Industries
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Features
For Microwave MIC Assembly & Automated
High Volume Manufacturing Lines
Mechanically Rugged Design
Three Barrier Heights for Optimized Mixer
Performance
Wide Product Range: Series Pair, Ring, Bridge,
and 8 Diode Ring
Description
The Beamless Diode family is designed for a high
degree of device reliability in both commercial and
industrial uses. They are designed to offer the utmost
in performance as well as achieving price sensitive
cost targets for commercial systems.
Use in ring or crossover designs in double
balanced mixer designs
Virtually any LO requirement can be met with
choice of barrier height.
100% DC tested on wafer.
Available in film frame or waffle pack.
Electrical Specifications at 25
°C
Part
Number
Band
Barrier
VF
IF = 1.0 mA
(mV) VF
IF = 1.0 mA
(mV)
CJ1, 2
VR = 0V, f = 1 MHz
(pF) RS
IF = 5 mA
(Ohms)
VB (V)@
10 µAOutline
Drawing
Number
N
um
b
er
B
an
d
B
arr
i
er Min. Max.
(
m
V)
Min. Max.
(Oh
ms
)
Min.
N
um
b
er
Ring Quad3
DMF3926–000
DME3927–000
DMJ3928–000
S
S
S
Low
Medium
High
200
300
500
260
400
600
10
10
10
0.3
0.3
0.3
0.5
0.5
0.5
5.0
5.0
5.0
2
3
4
551–002
551–002
551–002
DMF3942–000
DME3943–000
DMJ3944–000
X
X
X
Low
Medium
High
250
325
550
310
425
650
10
10
10
0.15
0.15
0.15
0.30
0.30
0.30
8.0
8.0
8.0
2
3
4
551–002
551–002
551–002
Bridge Quad3
DMF3929–000
DME3930–000
DMJ3931–000
S
S
S
Low
Medium
High
200
300
500
260
400
600
10
10
10
0.3
0.3
0.3
0.5
0.5
0.5
5.0
5.0
5.0
2
3
4
551–004
551–004
551–004
1. CJ represents total capacitance.
2. Maximum CJ unbalance @ 0V, 1 MHz = .025 pF.
3. Matching Criteria VF @ 1 mA 15 mV available for matched sets.
Silicon Beamless Schottky Diodes
3–9
Alpha Industries
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Fax
•
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•
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Electrical Specifications (Continued)
Part
Number Band Drive
Level
VF
IF = 1.0 mA
(mV)
VF
IF = 1.0 mA
(mV)
CJ1, 2
VR = 0V, f = 1 MHz
(pF) RS
IF = 5 mA
(Ohms)
VB (V)@
10 µAOutline
Drawing
Number
Min. Max. Max. Min. Max. Max. Min.
Series Pair3
DMF3932–000
DME3933–000
DMJ3934–000
S
S
S
Low
Medium
High
200
300
500
260
400
600
10
10
10
0.3
0.3
0.3
0.5
0.5
0.5
5
5
5
2
3
4
551–012
551–012
551–012
Back to Back Ring Series Pair3
DMF3935–000
DME3936–000
DMJ3937–000
S
S
S
Low
Medium
High
200
300
500
260
400
600
10
10
10
0.3
0.3
0.3
0.5
0.5
0.5
5.0
5.0
5.0
2
3
4
551–056
551–056
551–056
OctoQuad Ring4
DMF3938–000
DME3939–000
DMJ3940–000
S–X
S–X
S–X
Low
Medium
High
400
600
1000
520
800
1200
15
15
15
0.15
0.15
0.15
0.3
0.3
0.3
16
16
16
4
6
8
556–020
556–020
556–020
1. CJ represents total capacitance.
2. Maximum CJ unbalance @ 0V, 1 MHz = .025 pF.
3. Matching Criteria VF @ 1 mA 15 mV available for matched sets.
4. Matching criteria VF @ 1 mA 20 mV available for matched sets.
Maximum Ratings
TSTG:
TOP:
Pdiss CW:
IMAX:
PIV:
–65°C to +175°C
–65°C to +150°C
75 mW/junction
50 mA Volts
VB rating
Packing Methods
1. Vacuum release gel–pack.
2. Wafer on film frame (rejects are marked
with ink).
– Diced, ready for pick and place
– Unsawn whole wafer, 7 mil thick, max.
Assembly and Handling Procedure
The process flow for assembly is:
1. Die attach using nonconductive epoxy
2. Wire bond
3. Encapsulation – nonconductive epoxy
Die Attach Methods
All leadless chips are compatible with both eutectic
and conductive epoxy die attach methods. Eutectic
processes use Sn–Au or Sn–Pb solder. Non conductive
die attach is recommended.
Wire Bonding
T wo methods can be used to connect wire, ribbon, or
wire mesh to the chips:
Thermocompression
Ballbonding
Alpha recommends use of pure gold wire.
Silicon Beamless Schottky Diodes
