ZXMN7A11G
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS 70 V ID= 250A, VGS=0V
Zero gate voltage drain current IDSS 1AVDS= 70V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) 1.0 V ID= 250A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%.
RDS(on) 0.13 ⍀VGS= 10V, ID= 4.4A
0.19 ⍀VGS= 4.5V, ID = 3.8A
Forward transconductance(*)(‡) gfs 4.66 S VDS= 15V, ID= 4.4A
Dynamic(‡)
Input capacitance Ciss 298 pF
VDS= 40V, VGS=0V
f=1MHz
Output capacitance Coss 35 pF
Reverse transfer capacitance Crss 21 pF
Switching (†)(‡)
(†) Switching characteristics are independent of operating junction temperature.
Turn-on-delay time td(on) 1.9 ns
VDD= 35V, ID= 1A
RG≅6.0⍀, VGS= 10V
Rise time tr 2ns
Turn-off delay time td(off) 11.5 ns
Fall time tf5.8 ns
Total gate charge Qg4.35 nC VDS= 35V, VGS= 5V
ID= 4.4A
Total gate charge Qg7.4 nC
VDS=35V, VGS= 10V
ID= 4.4A
Gate-source charge Qgs 1.06 nC
Gate drain charge Qgd 1.8 nC
Source-drain diode
Diode forward voltage(*) VSD 0.85 0.95 V Tj=25°C, IS= 2.5A,
VGS=0V
Reverse recovery time (‡)
(‡) For design aid only, not subject to production testing.
trr 19.8 ns Tj=25°C, IS= 2.5A,
di/dt=100A/s
Reverse recovery charge(‡) Qrr 14 nC