ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V : RDS(on)=0.13 ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package G S Applications * DC-DC converters * Power management functions * Disconnect switches * Motor control * Class D audio output stages Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel ZXMN7A11GTA 7 12 1,000 ZXMN7A11GTC 13 12 4,000 Device marking ZXMN 7A11 Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN7A11G Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 70 V Gate-source voltage VGS 20 V ID 3.8 A @ VGS=10V; TA=70C(b) 3.0 A @ VGS=10V; TA=25C(a) 2.7 A IDM 10 A IS 5 A Pulsed source current (body diode)(c) ISM 10 A Power dissipation at TA =25C (a) Linear derating factor PD 2 16 W mW/C Power dissipation at TA =25C(b) Linear derating factor PD 3.9 31 W mW/C Tj, Tstg -55 to +150 C Symbol Limit Unit Junction to ambient(a) RJA 62.5 C/W Junction to ambient(b) RJA 32 C/W Continuous drain current @ VGS=10V; TA=25C(b) Pulsed drain current(c) Continuous source current (body diode)(b) Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN7A11G Characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN7A11G Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. V(BR)DSS 70 Typ. Max. Unit Conditions Static Drain-source breakdown voltage Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) V ID= 250A, VGS=0V 1 A VDS= 70V, VGS=0V 100 nA VGS=20V, VDS=0V 1.0 V ID= 250A, VDS=VGS 0.13 VGS= 10V, ID= 4.4A 0.19 VGS= 4.5V, ID = 3.8A VDS= 15V, ID= 4.4A gfs 4.66 S Input capacitance Ciss 298 pF Output capacitance Coss 35 pF Reverse transfer capacitance Crss 21 pF Turn-on-delay time td(on) 1.9 ns Rise time tr 2 ns Turn-off delay time td(off) 11.5 ns Fall time tf 5.8 ns Total gate charge Qg 4.35 nC Total gate charge Qg 7.4 nC Gate-source charge Qgs 1.06 nC Gate drain charge Qgd 1.8 nC Diode forward voltage(*) VSD 0.85 Reverse recovery time () trr Qrr Forward transconductance (*)() Dynamic() VDS= 40V, VGS=0V f=1MHz Switching ()() VDD= 35V, ID= 1A RG6.0, VGS= 10V VDS= 35V, VGS= 5V ID= 4.4A VDS=35V, VGS= 10V ID= 4.4A Source-drain diode () Reverse recovery charge 0.95 V Tj=25C, IS= 2.5A, VGS=0V 19.8 ns 14 nC Tj=25C, IS= 2.5A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN7A11G Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN7A11G Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com ZXMN7A11G Intentionally left blank Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN7A11G Package outline - SOT223 DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com