Issue 1 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN7A11G
70V N-channel enhancement mode MOSFET
Summary
VDSS=70V : RDS(on)=0.13⍀
ID=3.8A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT223 package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
• Class D audio output stages
Ordering information
Device marking
ZXMN
7A11
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMN7A11GTA 7 12 1,000
ZXMN7A11GTC 13 12 4,000
D
S
G
ZXMN7A11G
Issue 1 - March 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage VDSS 70 V
Gate-source voltage VGS ±20 V
Continuous drain current @ VGS=10V; TA=25°C(b) ID3.8 A
@ VGS=10V; TA=70°C(b) 3.0 A
@ VGS=10V; TA=25°C(a) 2.7 A
Pulsed drain current(c) IDM 10 A
Continuous source current (body diode)(b) IS5A
Pulsed source current (body diode)(c) ISM 10 A
Power dissipation at TA =25°C (a)
Linear derating factor
PD2
16
W
mW/°C
Power dissipation at TA =25°C(b)
Linear derating factor
PD3.9
31
W
mW/°C
Operating and storage temperature range Tj, Tstg -55 to
+150
°C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient(a) R⍜JA 62.5 °C/W
Junction to ambient(b) R⍜JA 32 °C/W
ZXMN7A11G
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS 70 V ID= 250A, VGS=0V
Zero gate voltage drain current IDSS 1AVDS= 70V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) 1.0 V ID= 250A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%.
RDS(on) 0.13 ⍀VGS= 10V, ID= 4.4A
0.19 ⍀VGS= 4.5V, ID = 3.8A
Forward transconductance(*)(‡) gfs 4.66 S VDS= 15V, ID= 4.4A
Dynamic(‡)
Input capacitance Ciss 298 pF
VDS= 40V, VGS=0V
f=1MHz
Output capacitance Coss 35 pF
Reverse transfer capacitance Crss 21 pF
Switching (†)(‡)
(†) Switching characteristics are independent of operating junction temperature.
Turn-on-delay time td(on) 1.9 ns
VDD= 35V, ID= 1A
RG≅6.0⍀, VGS= 10V
Rise time tr 2ns
Turn-off delay time td(off) 11.5 ns
Fall time tf5.8 ns
Total gate charge Qg4.35 nC VDS= 35V, VGS= 5V
ID= 4.4A
Total gate charge Qg7.4 nC
VDS=35V, VGS= 10V
ID= 4.4A
Gate-source charge Qgs 1.06 nC
Gate drain charge Qgd 1.8 nC
Source-drain diode
Diode forward voltage(*) VSD 0.85 0.95 V Tj=25°C, IS= 2.5A,
VGS=0V
Reverse recovery time (‡)
(‡) For design aid only, not subject to production testing.
trr 19.8 ns Tj=25°C, IS= 2.5A,
di/dt=100A/s
Reverse recovery charge(‡) Qrr 14 nC
ZXMN7A11G
Issue 1 - March 2006 8 www.zetex.com
© Zetex Semiconductors plc 2006
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package outline - SOT223
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - - - - -
