2SA2060 - Toshiba - Datasheet.Live

2SA2060

2009-12-21

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2060

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

• High DC current gain: hFE = 200 to 500 (IC = −0.3 A)

• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

• High-speed switching: tf = 90 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −50 V

Collector-emitter voltage VCEO −50 V

Emitter-base voltage VEBO −7 V

DC IC −2.0

Collector current

Pulse ICP −3.5

Base current IB −200 mA

t = 10 s 2.5

Collector power

dissipation DC

(Note 1) 1.0

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA SC-62

TOSHIBA 2-5K1A

Weight: 0.05 g (typ.)

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2SA2060

2009-12-21

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO V

CB = −50 V, IE = 0 ― ― −100 nA

Emitter cut-off current IEBO V

EB = −7 V, IC = 0 ― ― −100 nA

Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V

hFE (1) VCE = −2 V, IC = −0.3 A 200 ― 500

DC current gain

hFE (2) VCE = −2 V, IC = −1.0 A 100 ― ―

Collector-emitter saturation voltage VCE (sat) I

C = −1.0 A, IB = −0.033 A ― ― −0.2 V

Base-emitter saturation voltage VBE (sat) I

C = −1.0 A, IB = −0.033 A ― ― −1.1 V

Collector output capacitance Cob V

CB = −10 V, IE = 0, f = 1 MHz ― 20 ― pF

Rise time tr ― 60 ―

Storage time tstg ― 250 ―

Switching time

Fall time tf

See Figure 1 circuit diagram.

VCC ≈ −30 V, RL = 30 Ω

IB1 = 33 mA,IB2 = 33 mA ― 90 ―

Marking

Note 3: A line to the right of a Lot No. identifies the indication of product Labels.

Without a line: [[Pb]]/INCLUDES > MCV

With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

4 G

Part No. (or abbreviation code)

Lot No.

Note 3

Figure 1 Switching Time Test Circuit &

Timin

Chart

IB2

IB1

20 μs

Output

Input

IB2

IB1

VCC

Duty cycle < 1%

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Collector current IC (A)

Base-emitter saturation voltage

VBE (sat) (V)

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

hFE – IC

DC current gain hFE

Collector current IC (A)

VCE (sat) – IC

Collector-emitter saturation voltage

VCE (sat) (V)

Collector current IC (A)

VBE (sat) – IC

Base-emitter voltage VBE (V)

IC – VBE

Common emitter

VCE = −2 V

Single nonrepetitive pulse

Ta = 100°C −55

−1.8

0 −0.2 −0.4 −0.6 −1 −1.2−0.8

−0.6

−1.2

−2.4

−3

Common emitte

Ta = 25°C

Single nonrepetitive

pulse

−0.8 −2.4−1.6

−60 −40

−30

−20

−10

−6

IB = −2 mA

−3

−2.4

−1.8

−1.2

−0.6

−4

−80

−100

−0.4 −2 −1.2

−0.001 −0.01 −0.1 −1 −10

−10

−0.1

−1

Common emitter

IC/IB = 30

Single nonrepetitive pulse

−55

Ta = 100°C

−0.001 −0.01 −0.1 −1 −10

100

1000

10000

Common emitter

VCE = −2 V

Single

nonrepetitive

pulse

−55

Ta = 100°C

−0.001

−1

−0.1

−0.01

−0.001 −0.01 −0.1 −1 −10

Common emitter

IC/IB = 30

Single nonrepetitive

pulse

−55

Ta = 100°C

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2SA2060

2009-12-21

Pulse width tw (s)

rth – tw

Transient thermal resistance

rth (°C/W)

Collector-emitter voltage VCE (V)

Safe Operating Area

Collector current IC (A)

Curves should be applied in thermal limited area.

Single nonrepetitive pulse Ta = 25°C

Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu

area: 645 mm2)

1000

0.001

100

0.01 0.1 1 10 100 1000

−10

−0.01

−0.1 −1 −10 −100

−0.1

−1

IC max (pulsed) ♦

DC operation *

(Ta = 25°C)

VCEO max

10 μs♦

100 μs♦ 1 ms♦

100 ms♦*

10 ms♦

10 s♦*

♦: Single nonrepetitive pulse

Ta = 25°C

Note that the curves for 100 ms*,

10 s* and DC operation* will be

different when the devices aren’t

mounted on an FR4 board (glass

epoxy, 1.6 mm thick, Cu area:

645 mm2). These characteristic

curves must be derated linearly

with increase in temperature.

IC max (continuous)

−0.5 −5 −50

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2009-12-21

RESTRICTIONS ON PRODUCT USE

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in this document, and related hardware, software and systems (collectively “Product”) without notice.

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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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