1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band ra dar applications in the frequency range from
2.7 GHz to 2.9 GHz.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operation (2.7 GHz to 2.9 GHz)
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz
BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 4 — 23 September 2013 Product data sheet
Table 1. Typical perform ance
Typical RF performance at Tcase =25
C; tp = 300
s;
= 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Test signal f VDS PLGpDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 2.7 to 2.9 32 350 13 50 8 5
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 2 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLS7G2729L-350P (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLS7G2729LS-350P (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Tabl e 3. Ordering informati on
Type number Package
Name Description Version
BLS7G2729L-350P - flanged balanced ceramic package; 2 mounting holes;
4 leads SOT539A
BLS7G2729LS-350P - earless flanged balanced ceramic package; 4 leads SOT539B
Table 4. Limiting va lu es
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +11 V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 3 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
5. Thermal characteristics
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-mb) transient thermal impedance from junction
to mounting base Tcase =85C; PL= 350 W
tp=100s; = 10 % 0.07 K/W
tp=200s; = 10 % 0.09 K/W
tp=300s; = 10 % 0.10 K/W
tp=100s; = 20 % 0.09 K/W
Table 6. DC charac teristics
Tj=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D=2.2mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 220 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V--2.8A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -39-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS =10V; I
D=11.0A - 16.2 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID=7.7A - 0.065 -
Table 7. RF characteristics
Test signal: pulsed RF; tp = 300
s;
= 10 %; RF performance at VDS =32V; I
Dq = 200 mA;
Tcase =25
C; unless otherwise specified, in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL= 350 W 11 13 - dB
RLin input return loss PL= 350 W - 10 - dB
Ddrain efficiency PL= 350 W 46 50 - %
Pdroop(pulse) pulse droop power PL= 350 W - 0 0.5 dB
trrise time PL= 350 W - 8 50 ns
tffall time PL= 350 W - 5 50 ns
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 4 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load
mismatch corr es po nd in g to VSWR = 10 : 1 through all phases under the following
conditions: VDS =32V; I
Dq =200mA; P
L=350W; t
p = 300 s; = 10 %.
7.2 Impedance information
[1] Impedances are taken at a single halve of the push-pull transistor
Table 8. Typical impedance
f ZS[1] ZL[1]
GHz
2.7 2.8 j8.7 1.8 j5.1
2.8 3.9 j8.2 2.1 j5.4
2.9 4.8 j9.3 1.5 j5.7
Fig 1. Definitio n of tran sistor impedance
001aak544
gate 1
gate 2
drain 2
drain 1
Z
S
Z
L
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 5 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
7.3 Test circuit information
Printed-Circuit Board (PCB): Rogers RO6006; r = 6.45 F/m; thickness = 0.635 mm; thickness copper plating = 35 m.
The vias can be used as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more appropriate application
demonstration for specific customer needs can be provided. See Table 9 for list of components.
Fig 2. Component layout
%/6*/63
%/6*/63
5(9
5(9
&
5
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5
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&
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Table 9. List of compone nts
See Figure 2 for component layout.
Component Description Value Remarks
C1, C2 SMD capacitor 4.7 F, 50 V
C5, C6 multilayer ceramic chip capacitor 12 pF ATC800A
C7, C8 multilayer ceramic chip capacitor 20 pF ATC800A
C9, C10 multilayer ceramic chip capacitor 12 pF ATC800A
C11, C1 2 multilayer ceramic chip capacitor 1 nF ATC700A
C13, C14 electrolytic capacitor 220 F, 63 V
R1, R2 SMD resistor 9.1 SMD 0805
R3, R4 SMD resistor 8 SMD 0805
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 6 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
7.4 Graphical data
VDS =32V; I
Dq = 200 mA.
(1) f = 2.7 GHz
(2) f = 2.8 GHz
(3) f = 2.9 GHz
VDS =32V; I
Dq = 200 mA.
(1) f = 2.7 GHz
(2) f = 2.8 GHz
(3) f = 2.9 GHz
Fig 3. Power gain and drain efficiency as function of
output power; typical values Fig 4. Po wer gain and drain efficiency as function of
output power; typical values
VDS =32V; I
Dq = 200 mA; tp =300 s; =10%.
(1) f = 2.7 GHz
(2) f = 2.8 GHz
(3) f = 2.9 GHz
VDS =32V; I
Dq = 200 mA; tp = 300 s; =10%;
PL= 350 W.
Fig 5. Output power as a function of input power;
typical valu e s Fig 6. Drain efficiency as a function of frequency;
typical values
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DDD
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BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 7 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
VDS =32V; I
Dq = 200 mA; tp = 300 s; =10%;
PL= 350 W. VDS =32V; I
Dq = 200 mA; tp = 300 s; =10%;
PL= 350 W.
Fig 7. Power gain as a function of frequency; typical
values Fig 8. Input retu rn loss as a function of frequency;
typical values
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BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 8 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
8. Package outline
Fig 9. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 12-05-02
10-02-02
0 5 10 mm
scale
p
AF
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56 0.18
0.10 31.55
30.94 13.72 9.53
9.27 17.12
16.10 10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455 0.007
0.004 1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365 0.674
0.634 0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059 1.625
1.615
1.005
0.995 0.130
0.120 0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 9 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
Fig 10. Package outline SOT539B
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03 0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395 0.01
0.007
0.004 0.54 1.005
0.995
0.089
0.079
1.275
1.265 0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
AF
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 10 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MTF Median Time to Failure
S-band Short wave Band
SMD Surface-Mounted Device
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS7G2729L-350P_LS-350P v.4 20130923 Product data sheet - BLS7G2729L-350P_LS-350P v.3
Modifications: The status of this document has been changed to Product data sheet.
Table 1 on page 1: the table has been updated.
Table 1 on page 1: the table has been updated.
Table 4 on page 2: value VGS Max changed from +13 to +11.
Figure 2 on page 5: notes have been updated.
Table 9 on page 5: component C8 has been updated.
Section 7.4 on page 6: figures have be en updated and added.
BLS7G2729L-350P_LS-350P v.3 20130712 Objective data sheet - BLS7G2729L-350P_LS-350P v.2
BLS7G2729L-350P_LS-350P v.2 20130506 Objective data sheet - BLS7G2729L-350P_LS-350P v.1
BLS7G2729L-350P_LS-350P v.1 20110524 Objective data sheet - -
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 11 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat ion The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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Applications — Applications that are described herein for any of these
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Customers are responsible for the design and ope ration of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 12 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a pri or
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a docume nt is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 September 2013
Document identi fier: BLS7G27 29L-350P_LS-3 50P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit information . . . . . . . . . . . . . . . . . . . 5
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Handling information. . . . . . . . . . . . . . . . . . . . 10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13