~ MOSPOWER Cross Reference List HEWLETT-PACKARD . Industry BVpss 'DS(on) Siliconix BVpss 'DS(on) Part No. (Volts) (Ohms) Package Equivalent (Volts) (Ohms) HPWR-6501 450 0.85 TO-3 IRF 444 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF 444 450 0.85 HPWR-6504 400 1.0 TO-3 VN4O01A 400 1:0 HITACHI 28K132 100 1.71 TO-3 IRF 122 100 0.4 28K133 120 1:71 TO-3 IRF223 150 1.2 28K134 440 v71 TO-3 IRF223 150 1.2 28K135 160 1:71 TO-3 IRF 222 200 1.2 | 28K175 180 171 TO-3 (RF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 28K220 160 TO-3 _ 2SK221 200 TO-3 _ 2SK259 350 3.0 TO-3 IRF323 350 25 2SK260 400 3.0 T0-3 IRF322 400 25 28/47 100 1:71 TO-3 _ 2548 120 1.71 TO-3 _ _ 2849 140 1:71 TO-3 _ 28J50 160 1.71 TO-3 _ - INTERNATIONAL RECTIFIER IRF120 100 0.30 TO-3 IRF120 _ ~ IRF121 60 0.30 TO-3 IRF121 _ IRF122 100 0.40 TO-3 IRF 122 _ _ IRF123 60 0.40 TO-3 IRF123 IRF 130 100 0.18 TO-3 IRF130 IRF131 60 0.18 TO-3 iRF131 _ _ (RF 132 100 0.25 TO-3 IRF132 _ _ IRF133 60 0.25 TO-3 IRF133 ~ IRF 140 100 0.085 TO-3 IRF140 IRF141 60 0.085 TO-3 IRF 141 IRF 142 100 0.11 TO-3 IRF 142 _ IRF 143 60 0.11 TO-3 IRF 143 _ _ IRF 150 100 0.055 TO-3 IRF 150 IRF151 60 0.055 TO-3 i{RF151 IRF152 100 0.08 TO-3 iRF152 _ {RF153 60 0.08 TO-3 IRF153 _ (RF220 200 08 TO-3 IRF220 IRF221 150 08 TO-3 IRF221 _ IRF222 200 1.2 TO-3 IRF222 _ IRF223 450 1.2 TO-3 IRF223 _ IRF230 200 0.4 TO-3 IRF230 _ IRF231 150 0.4 TO-3 IRF231 IRF232 200 0.6 TO-3 iRF232 _ IRF233 150 0.6 TO-3 IRF233 ~ _ IRF240 200 0.18 TO-3 IRF240 IRF241 150 0.18 TO-3 IRF241 _ (RF 242 200 0.22 TO-3 IRF 242 IRF243 150 0.22 TO-3 IRF243 _ IRF 250 200 0.085 TO-3 IRF250 _ IRF251 150 0.085 TO-3 IRF251 _ IRF252 200 0.120 TO-3 IRF252 _ IRF 253 150 0.120 TO-3 iRF253 IRF320 400 1.8 TO-3 IRF320 IRF321 350 18 TO-3 IRF321 ~ IRF322 400 25 TO-3 IRF322 ~ _ IRF323 350 25 TO-3 IRF323 _ IRF330 400 1.0 TO-3 IRF330 _ IRF331 350 1.0 TO-3 IRF331 _ IRF332 400 15 TO-3 IRF332 IRF333 350 15 TO-3 IRF333 _ ~ IRF340 400 0.55 TO-3 IRF340 IRF341 350 0.55 TO-3 IRF341 _ _ IRF342 400 0.80 TO-3 IRF342 IRE343 350 0.80 TO-3 IRF343 IRF350 400 0.3 TO-3 IRF350 _ ~ IRF351 350 0.3 TO-3 IRF351 _ IRF352 400 0.4 TO-3 IRF 352 IRF353 350 0.4 TO-3 IRF353 _ Siliconix 1-13 {S1] SOUSISJOY SSOLD YIMOdSOWMOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 SiliconixIArea AN IKFO4) IKFO42 iIRF841 IRF440 = IRF444 = IRF442 IRF443 _=-. 2s IKFO4U IRF440 = IRF4441 IRF442 IRF443 gs IRF840 = IRF844 = IRF842 = IRF8&43 Siliconix Advanced Information 5OOV) N-Channel Enhancement Mode These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. Product Summary FEATURES neat, | BYoss | Rosiom | tp Package a High Voltage IRF440 500V a No Second Breakdown TAFa41 soy | 88 BOA a High Input Impedance arase 500V TOS u Internal Drain-Source Diode IRF443 ov | | 10% | 7A m Very Rugged: Excellent SOA IRFB40 500V a Extremely Fast Switching 0.852 | 8.0A rose BENEFITS areas aso 1.102 | 7.0A a Reduced Component Count a Improved Performance a Simpler Designs J a improved Reliability so s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current IRF440, 442, 840, 842 0.0... cece ce cere ee ee en ete ees 500V Pulsed (80us to 300us, 1% duty cycle).........-..... t32A IRF441, 443, B41, B43 -..... eee eeeee cere crete nee ener eens 450V Gate Current (Peak) ..........cc cece eee eee e ener ere ence nee +3A Drain-Gate Voltage _ Vv IRF440, 442, 840, 842 ......ccccccecececevevseseseseeveeees 500V Gate-Source Voltage ......... ccc cece cece eee nner ett e en es + 40V IRF441, 443, 841, 843 200. ccc ccc cence rene eee 450V Total Power Dissipation ......5..... cc cceee eevee ee ee en ennee 125W Linear Derating Factor .............:ee eects teen eens 1.0W?C Drain Current Continuous" Operating and Storage IPFA40, 441, 840, 841 cee ceccceccesceeseeseeseecseneens 8A Temperature ------sserreersereeersrresrcess 55C to + 150C IRF442, 443, 842, 843 2.2.0... cece cece e tenn ete tees +7A Notes: 1. Limited by package dissipation. PACKAGE DIMENSIONS 5 Fr 230 po Ey = ea 5 | 8 oe 04 iaaze) MAX ~ | 63) 4 qT T 0.043 1.092) $9392 SEATING 0038/0965) MN j-$90 12.70) PLANE 1187 wna vn fs8t 8) i (4. a 0.675 (17.145) |b t77 (29.6896) (6.35) 0.655 (16.637) La ore | ma ago (71.176) | fn | ? \ a (iby j 0420 (70.668) Ye WN = _ 0.161 (4.089) 045 (1.15, f ads nl ; oe 73.855) 1 as _ J om 0.205 (5.207) BOTTOM VIEW 113.335) R MAX _ (423) __t PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source 2-30 SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part T Parameter Number Min Typ Max Unit est Conditions Static IRF440, 442 | 4, Drain-Source Breakdown IRF840, 842 BV, Ves =0, lp = 250uA OSS Voltage IRF441,443 | 4.0 Vv es=h ose IRF841, 843 Vestn) Gate Threshold Voltage All 2.0 3.3 4.0 v Vos= Ves, lp=1 mA lass Gate-Body Leakage All ; 10 +100 nA Veg = + 20V, Vos =0 \ Zero Gate Voltage Drain All 0.1 | 0.25 mA Vos =Rated Vos Vag = OV OSS Current 02 | 10 Vig = Rated Ving Vag = OV, T= 125C Ipjon) =: ON-State Drain Current All 8.0 A Vps = 25V, Ves = 10V (Note 1) IRF 440, 441 Static Drain-Source On-State | _!RF840, 841 08 | 085 Fosion) , 2 | Vag =10V, Ip = 4A (Note 1) Resistance IRF442, 443 0 IRF842, 843 1.00 | 11 Dynamic Dts Forward Transconductance All 4.0 6.5 Ss Vos = 25V, Ip =4A (Note 1) Ciss Input Capacitance 1225 | 1600 Coss Output Capacitance All 200 350 pF Ves = 0, Vos = 25V, f= 1 MHz Cres Reverse Transfer Capacitance 85 150 : tavon) Turn-On Delay Time All 17 35 ty Rise Time All 5 15 ng | Yoo 200V, 1p 4A, R, = 802, Ry = 102 tary Turn-Off Delay Time All 42 90 Veg= 10V (Fig. 1) ty Fall Time All 14 30 Drain-Source Diode Characteristics Vsp Forward On Voltage Alt -2.0 Vv ls =8A, Vag = 0 (Note 1) ter Reverse Recovery Time All 800 ns lp =-8A, Veg =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 us to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circult WA 50.2 di/dt Adjust . (1 = 27 WH) _ | Zt $10 50uF ~ IN4933 2 7 - i(pkyAdiust > | \ Rgen 6 I I ~ 4 | i j + 1N4Q01 | | 400uF == OS 4 - < | | | jj clReuiT = | R$ 0252 PULSE UNDER L $ 0.01uH [GENERATOR] [TEST _! PW. = 1 ys Cg < 50 pF Lerman. . La. WA DUTY CYCLE = 1% 1N4723 | 7 anez04 . SCOPE . FROM TRIGGER CKT Siliconix 2431 eveidl = cyeidl = breddl = Oedal eyridl = cyvidl = bWrsdl = Ovrial