MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Unit: Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING 55 wan 3 0.3 type double diode, especially designed for high speed switching application. > Due to the small pin capacitance,short switching time (reverse recovery time), it 05 +0.28 a 16 0 579. is most suitable for high. speed switching application and limitter,clipper application. 7 0.95 @Smail pin capacitance 4 @Quick switching time ai @Good two elements characteristics @Smait outline package for mounting @dHigh voltage @Doubie and super mini package for mounting 90 0.95 tk tH ' FEATURE ~ S ; 28 9 o| F ge APPLICATION ~le 2 For general high speed switching of audio machine, VCR. ~+Y ot f _ o 2 Qo Terminal Connector : CATHODE 1 : CATHODE 2 EIAJ : SC-59 : ANODE(COMMON} JEDEC : TO-236 resembiance Note) The dimension without tolerance represent central value. MARKING INTERNAL CONNECTION A 5 MAXIMUM RATINGS (ra-25'C) Oo oO Parameter VRM Peak 75 VR reverse 50 lFSM 4 Peak 300 rectification current 100 Total allowable 150 Junction +125 -55 to +125 ELECTRICAL CHARACTERISTICS (Ta=25C) va: Limits : E Test conditions Unit Symbol Parameter con Min Tw Max VF1 Forward voltage - le =10mA 0.77 0.9 Vv Vr2 Forward voltage !F =50mA 0.90 1.0 v VF3 Forward voltage tF=100mMA 0.95 1.2 v In Reverse current Vr =50V o1 BA Cr Pin capacitance Vr =0,f=1MHz 28 4.0 pF tre Reverse recovery time (Refer to test circuit} 4.0 ns fe ES ELECTRIC 8-19MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) REVERSE RECOVERY TIME(tr)TEST CIRCUIT TRIGGER 7 D.U.T PULSE 0.02 uF ~ SAMPLING GENERATOR u OSCILLOSCOPE (Zout=50.Q) (Zin=60.Q} ir=10mA, VA=6V + 3kQ Ri=500 DC POWER REVERSE RECOVERY SUPPLY TIME FOR tr=0.1h TYPICAL CHARACTERISTICS FORWARD CURRENT VS.FORWARD VOLTAGE FORWARD CURRENT IF(mA) PIN CAPACITANCE Ct(pF) 0.5 0.2 0.1 0.2 G4 a6 0.8 1.0 1.2 FORWARD VOLTAGE VF(V) PIN CAPACITANCE VS. REVERSE VOLTAGE 50 100 2 5 10 20 REVERSE VOLTAGE Va(V) REVERSE CURRENT Ia(na) REVERSE RECOVERY TIME tr(ns) 100 @INPUT VOLTAGE WAVE FORM O.1lr REVERSE CURRENT VS.REVERSE VOLTAGE = on nm 2 2 o -~ N 05 0.2 01 6 10 20 30 50 REVERSE VOLTAGE Va(V) REVERSE RECOVERY TIME VS. FORWARD CURRENT 10 8 6 4 _ 2 | | 0 0 20 40 60 80-100 FORWARD CURRENT IF(mA) 8-20 MITSUBISHI ELECTRIC