Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz. Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 18.9 29.8 7.2 -34.0 -18 2140 MHz 19.1 29.3 7.1 -34.0 -25 2170 MHz 19.2 28.9 7.0 -34.0 -17 AFT21S220W02SR3 AFT21S220W02GSR3 2110-2170 MHz, 50 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS NI--780S--2L AFT21S220W02SR3 Features Designed for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel. NI--780GS--2L AFT21S220W02GSR3 1 RFout/VDS RFin/VGS 2 (Top View) Figure 1. Pin Connections Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT21S220W02SR3 AFT21S220W02GSR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -0.5, +65 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature Range TC -40 to +125 C Operating Junction Temperature Range (1,2) TJ -40 to +225 C CW 92 0.41 W W/C Symbol Value (2,3) Unit RJC 0.56 C/W CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 91C, 50 W CW, 28 Vdc, IDQ = 1200 mA, 2140 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 5 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGS(Q) 1.4 1.8 2.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.0 Adc) VDS(on) 0.1 0.15 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps 18.1 19.1 21.1 dB D 26.0 29.3 -- % PAR 6.6 7.1 -- dB ACPR -- -34.0 -32.0 dBc IRL -- -25 -12 dB 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Part internally matched both on input and output. 5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. (continued) AFT21S220W02SR3 AFT21S220W02GSR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1200 mA, f = 2140 MHz, 120 sec Pulse Width, 10% Duty Cycle VSWR 10:1 at 30 Vdc, 250 W Pulse Output Power (3 dB Input Overdrive from 180 W Pulse Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 2110-2170 MHz Bandwidth Pout @ 1 dB Compression Point, 120 sec Pulse Width, 10% Duty Cycle P1dB -- 209 -- W -- -18 -- VBWres -- 80 -- MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg. GF -- 0.3 -- dB Gain Variation over Temperature @ 166 W CW (-30C to +85C) G -- 0.02 -- dB/C P1dB -- 0.01 -- dB/C AM/PM (Maximum value measured at the P3dB compression point across the 2110-2170 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature @ 166 W CW (-30C to +85C) (1) 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. AFT21S220W02SR3 AFT21S220W02GSR3 RF Device Data Freescale Semiconductor, Inc. 3 C9 C17 VDD C10 VGG C7 C11* C4 C1* R1 CUT OUT AREA C3 C2 C5 R2 C6 C16* C15* C12* VGG C8 C13 C14 C18 AFT21S220W02S Rev. 2 D57394 *C1, C11, C12, C15 and C16 are mounted vertically. Figure 2. AFT21S220W02SR3 Test Circuit Component Layout Table 5. AFT21S220W02SR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4, C6, C11, C12, C16 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C2 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C3, C5 0.1 F Chip Capacitors C1206C104K1RACTU Kemet C7, C8, C9, C10, C13, C14 10 F Chip Capacitors GRM32ER61H106KA12L Murata C15 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC C17, C18 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp R1, R2 4.75 , 1/4 W Chip Resistors CRCW12064R75FNEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D57394 MTL AFT21S220W02SR3 AFT21S220W02GSR3 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 19.2 Gps 28 19 18.8 PARC 18.6 18.2 2080 --33 --10 --34 --34.5 IRL 18 2060 --5 --33.5 ACPR 18.4 --32.5 2100 2120 2140 2160 2180 --15 --20 --25 --35 2220 2200 --30 --2.4 --2.6 --2.8 --3 PARC (dB) 29 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 19.6 19.4 D, DRAIN EFFICIENCY (%) 32 VDD = 28 Vdc, Pout = 50 W (Avg.) IDQ = 1200 mA, Single--Carrier W--CDMA 31 3.84 MHz Channel Bandwidth 30 D 19.8 ACPR (dBc) 20 --3.2 --3.4 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. 0 VDD = 28 Vdc, Pout = 184 W (PEP) IDQ = 1200 mA, Two--Tone Measurements --15 (f1 + f2)/2 = Center Frequency of 2140 MHz IM3--U --30 IM5--U IM5--L --45 IM7--L IM7--U --60 --75 IM3--L 1 10 100 200 300 TWO--TONE SPACING (MHz) 19.4 0 19.2 19 18.8 18.6 18.4 VDD = 28 Vdc, IDQ = 1200 mA, f = 2140 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF Gps --1 --15 40 --20 35 --2 dB = 42 W --1 dB = 31 W --2 D 45 30 ACPR --3 --3 dB = 56 W --4 --5 PARC 20 30 40 50 60 25 --25 --30 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 19.6 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing --35 20 --40 15 --45 70 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT21S220W02SR3 AFT21S220W02GSR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 20 18 D 14 2140 MHz 0 50 --10 40 2170 MHz 2140 MHz 2110 MHz 16 60 30 2170 MHz 20 ACPR 12 10 2110 MHz Gps 0 200 300 10 1 10 100 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ = 1200 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 22 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 25 18 Gain GAIN (dB) IRL 14 --5 IRL (dB) 5 16 --15 12 VDD = 28 Vdc Pin = 0 dBm IDQ = 1200 mA 10 8 1800 15 1900 2000 2100 2200 2300 2400 2500 --25 --35 2600 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT21S220W02SR3 AFT21S220W02GSR3 6 RF Device Data Freescale Semiconductor, Inc. Table 6. Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, IDQ = 1260 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 2110 3.03 - j5.49 3.14 + j5.71 3.09 - j5.64 18.8 54.2 264 50.3 -12 2140 3.62 - j5.77 4.06 + j5.98 3.37 - j5.73 18.8 54.1 255 49.0 -12 2170 4.75 - j5.91 5.19 + j5.97 3.49 - j5.61 19.0 54.0 253 49.5 -13 Max Output Power P3dB f (MHz) Zsource () Zin () Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 2110 3.03 - j5.49 3.35 + j5.99 3.70 - j6.29 16.6 55.1 322 51.8 -17 2140 3.62 - j5.77 4.42 + j6.26 3.88 - j6.19 16.6 55.0 314 51.0 -18 2170 4.75 - j5.91 5.69 + j6.11 4.28 - j6.16 16.6 54.9 310 50.7 -18 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 7. Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQ = 1260 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 3.03 - j5.49 3.17 + j5.81 2.97 - j3.19 20.7 52.9 196 59.1 -18 2140 3.62 - j5.77 4.19 + j6.13 2.59 - j3.06 20.7 52.6 183 58.3 -21 2170 4.75 - j5.91 5.36 + j5.92 2.76 - j3.04 20.8 52.6 183 58.6 -20 Max Drain Efficiency P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 3.03 - j5.49 3.32 + j6.09 3.03 - j3.22 18.7 53.7 233 61.4 -27 2140 3.62 - j5.77 4.46 + j6.38 2.64 - j3.06 18.7 53.3 215 60.3 -29 2170 4.75 - j5.91 5.78 + j6.11 2.85 - j3.15 18.7 53.5 222 60.5 -28 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT21S220W02SR3 AFT21S220W02GSR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB -- TYPICAL LOAD PULL CONTOURS -- 2140 MHz --1 50.5 --2 52 E --3 IMAGINARY () 53 --4 53.5 --5 54 P --6 E 58 56 --4 54 52 --5 50 P --6 48 46 --7 --7 53.5 --8 --9 50 --2 52.5 --3 IMAGINARY () --1 51.5 51 52.5 52 2 53 2.5 3 3.5 4 4.5 5 5.5 --9 6 44 42 --8 2 2.5 3 4 3.5 4.5 5 5.5 6 REAL () REAL () Figure 8. P1dB Load Pull Output Power Contours (dBm) Figure 9. P1dB Load Pull Efficiency Contours (%) --1 --1 --3 IMAGINARY () --2 21 20.5 E 20 --4 19.5 --5 19 P --6 18.5 --7 --9 --24 17 2 2.5 3 3.5 4 4.5 --18 E --16 --4 --14 --5 P --6 --12 --7 18 17.5 --8 --20 --22 --3 IMAGINARY () --2 5 5.5 6 --8 --9 2 2.5 3 3.5 4 4.5 5 5.5 REAL () REAL () Figure 10. P1dB Load Pull Gain Contours (dB) Figure 11. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 6 Gain Drain Efficiency Linearity Output Power AFT21S220W02SR3 AFT21S220W02GSR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL LOAD PULL CONTOURS -- 2140 MHz 51.5 --2 52.5 53 --3 IMAGINARY () --1 52 E 53.5 --4 54.5 --5 P E 60 --4 58 --8 53.5 53 54 --6 2 2.5 3 3.5 4 4.5 5 5.5 --9 6 P 48 2.5 2 3 46 4 3.5 52 50 44 --8 54 56 --5 --7 --7 --9 52 --3 54 --6 52 --2 IMAGINARY () --1 4.5 5 6 5.5 REAL () REAL () Figure 12. P3dB Load Pull Output Power Contours (dBm) Figure 13. P3dB Load Pull Efficiency Contours (%) --1 --1 --2 --2 19 18.5 E 18 --4 17.5 --5 17 --6 P 16.5 --7 15.5 --8 --9 2.5 3 4 3.5 --32 --26 E --24 --22 --4 --20 --5 --18 --6 P --7 16 --16 --8 15 2 --18 --28 --3 IMAGINARY () IMAGINARY () --3 --30 4.5 5 6 5.5 --9 2 2.5 3 3.5 4 4.5 5 5.5 REAL () REAL () Figure 14. P3dB Load Pull Gain Contours (dB) Figure 15. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 6 Gain Drain Efficiency Linearity Output Power AFT21S220W02SR3 AFT21S220W02GSR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS AFT21S220W02SR3 AFT21S220W02GSR3 10 RF Device Data Freescale Semiconductor, Inc. AFT21S220W02SR3 AFT21S220W02GSR3 RF Device Data Freescale Semiconductor, Inc. 11 AFT21S220W02SR3 AFT21S220W02GSR3 12 RF Device Data Freescale Semiconductor, Inc. AFT21S220W02SR3 AFT21S220W02GSR3 RF Device Data Freescale Semiconductor, Inc. 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Feb. 2014 Description Initial Release of Data Sheet AFT21S220W02SR3 AFT21S220W02GSR3 14 RF Device Data Freescale Semiconductor, Inc. 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