SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 1995 ✪
PARTMARKING DETAIL SP
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -50 V
Continuous Drain Current ID-130 mA
Pulsed Drain Current IDM -520 mA
Gate-Source Voltage Peak VGS ±20 V
Power Dissipation at Tamb
=25°C PTOT 360 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS -50 V VGS=0V, ID=0.25mA
Gate-Source
Threashold Voltage
VGS(th) -0.8 -1.5 -2.0 V VDS=VGS , ID=-1mA
Zero gate Voltage
Drain Current
IDSS -1
-2
-15
-60
-100
µA
µA
T
j
=25 °C
T
j
=125 °C
V
DS
=-50V, V
GS
=0V(2)
Tj=25 °C
V
DS
=-25V, V
GS
=0V
Gate-Source Leakage
Current
IGSS -1 -10 nA VGS = ±20V
VDS=0V
Drain Source On-State
Resistance (1)
RDS(on) 610
ΩVGS=-5V
ID=-100mA
Forward
Transconductance (1)
(2)
gfs 0.05 0.07 S VDS=-25V
ID=-100mA
Input Capacitance (2) Ciss 40
pF
VGS=0V
VDS=-25V
f=1MHz
Output Capacitance Coss 15
Reverse Transfer
Capacitance (2)
Crss 6
Turn-On Time ton td(on) 10
ns
VDD
=-30V
ID=-0.27A
VGS=-10V
RGS=50Ω
tr10
Turn-Off Time toff td(off) 18
tf25
* (1) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
(2) Sample test.
BSS84
D
G
S
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