PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857
SOT23
MARKING : AS BELOW
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 60 V
Collector -Emitter Voltage VCEO 50 V
Emitter Base Voltage VEBO 6.0 V
Collector Current IC 200 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 125 deg C
Storage Temperature Tstg -55 to +125 deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Voltage VCEO IC=100uA, IB=0 50 - - V
Collector Cut off Current ICBO VCB=60V, IE=0 - - 100 nA
Emitter Cut off Current IEBO VEB=6V, IC=0 - - 100 nA
DC Current Gain hFE(1) IC=1mA,VCE=6V 150 - 500
hFE(2) IC=0.1mA,VCE=6V 90 - -
Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=10mA - - 0.30 V
Base Emitter Saturation Voltage VBE(Sat) IC=100mA,IB=10mA - - 1.0 V
Dynamic Characteristics
Transition Frequency ft VCE=6V,IC=10mA, - 200 - MHz
Collector Output Capacitance Cob VCB=6V, IE=0 - 4.0 - pF
f=1MHz
Noise Figure NF VCE=6V, IE=0.3mA - - 20 dB
f=100Hz, Rg=10kohms
CLASSIFICATION E F
hFE(1) 150-300 250-500
MARKING PA PB
PIN CONF IG URATION (PNP)
1 = BA SE
2 = EMITTE R
3 = COLLECTOR
2
1
3
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company