2N6111 - CENTRAL SEMICONDUCTOR

November, 2014 − Rev. 11 1Publication Order Number:

2N6107/D

2N6107, 2N6109, 2N6111 (PNP),

2N6288, 2N6292 (NPN)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

•High DC Current Gain

•High Current Gain − Bandwidth Product

•TO−220 Compact Package

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage

2N6111, 2N6288

2N6109

2N6107, 2N6292

VCEO 30

Vdc

Collector−Base Voltage

2N6111, 2N6288

2N6109

2N6107, 2N6292

VCB 40

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous IC7.0 Adc

Collector Current − Peak ICM 10 Adc

Base Current IB3.0 Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25_C

PD40

0.32 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. Indicates JEDEC Registered Data.

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 3.125 _C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

7 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

30 − 50 − 70 VOLTS, 40 WATTS

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MARKING DIAGRAM

2N6xxxG

AYWW

2N6xxx = Specific Device Code

xxx = See Table on Page 4

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

See detailed ordering, marking, and shipping information in

the package dimensions section on page 4 of this data sheet

ORDERING INFORMATION

BASE

EMITTER 3

COLLECTOR 2, 4

BASE

EMITTER 3

COLLECTOR 2, 4

PNP NPN

TO−220

CASE 221A

STYLE 1

123

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 100 mAdc, IB = 0)

2N6111, 2N6288

2N6109

2N6107, 2N6292

VCEO(sus)

−

Vdc

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)

2N6111, 2N6288

(VCE = 40 Vdc, IB = 0)

2N6109

(VCE = 60 Vdc, IB = 0)

2N6107, 2N6292

ICEO

−

1.0

mAdc

Collector Cutoff Current

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)

2N6111, 2N6288

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

2N6109

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

2N6107, 2N6292

(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6111, 2N6288

(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6109

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6107, 2N6292

ICEX

−

100

2.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 2.0 Adc, VCE = 4.0 Vdc)

2N6107, 2N6292

(IC = 2.5 Adc, VCE = 4.0 Vdc)

2N6109

(IC = 3.0 Adc, VCE = 4.0 Vdc)

2N6111, 2N6288

(IC = 7.0 Adc, VCE = 4.0 Vdc)

All Devices

hFE

2.3

150

−

Collector−Emitter Saturation Voltage

(IC = 7.0 Adc, IB = 3.0 Adc) VCE(sat) − 3.5 Vdc

Base−Emitter On Voltage

(IC = 7.0 Adc, VCE = 4.0 Vdc) VBE(on) − 3.0 Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 4)

(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

2N6288, 2N6292

2N6107, 2N6109, 2N6111

4.0

10 −

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 250 pF

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe 20 − −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤2.0%.

4. fT = |hfe| • ftest

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

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00 20 40 60 80 100 120 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

Figure 2. Switching Time Test Circuit

+11 V

25 ms

-9.0 V

-4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

2.0

0.07

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02 0.1 0.2 0.3 0.5 2.0 3.0 7.0

TJ = 25°C

VCC = 30 V

IC/IB = 10

0.05

t, TIME (s)μ

1.0 5.0

td @ VBE(off) ≈ 5.0 V

0.07

0.03

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC(t) = r(t) RqJC

RqJC = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

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1.0

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0

5.0

2.0

0.15 5.0 10

CURRENT LIMIT

SECONDARY

BREAKDOWN LIMIT

THERMAL LIMIT

@ TC = 25°C (SINGLE PULSE)

7.0

IC,

LLE

URRENT (AMP

)

0.1 ms

1.0

0.5

0.2

0.3

2.0 3.0

0.5 ms

20 30 50 70 100

3.0

0.7

0.1

5.0 ms

There are two limitations on the power handling ability o f

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

300

0.5

VR, REVERSE VOLTAGE (VOLTS)

30 3.0 5.0 501.0 2.0

C, CAPACITANCE (pF)

200

TJ = 25°C

Cib

100

Figure 6. Turn−Off Time

10 20 30

5.0

0.07

Figure 7. Capacitance

IC, COLLECTOR CURRENT (AMP)

3.0

2.0

1.0

0.7

0.5

0.3

0.05 0.1 0.2 0.3 0.5 2.0 3.0 7.0

TJ = 25°C

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.1

t, TIME (s)μ

1.0 5.0

0.2

0.07

Cob

ORDERING INFORMATION

Device Device Marking Package Shipping

2N6107G 2N6107 TO−220

(Pb−Free) 50 Units / Rail

2N6109G 2N6109 TO−220

(Pb−Free) 50 Units / Rail

2N6111G 2N6111 TO−220

(Pb−Free) 50 Units / Rail

2N6288G 2N6288 TO−220

(Pb−Free) 50 Units / Rail

2N6292G 2N6292 TO−220

(Pb−Free) 50 Units / Rail

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

2N6107/D

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Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative

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