BFP410 NPN Silicon RF Transistor * Low current device suitable e.g. for handhelds 3 * For high frequency oscillators e.g. DRO for LNB 2 4 * For ISM band applications like 1 Automatic Meter Reading, Sensors etc. * Transit frequency f T = 25 GHz * Pb-free (RoHS compliant) package * Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP410 Marking AKs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 4.5 TA = -55 C 4.1 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.5 Collector current IC 40 Base current IB 6 Total power dissipation1) Ptot 150 mW Junction temperature TJ 150 C Ambient temperature TA -55 ... 150 Storage temperature T Stg -55 ... 150 mA TS 100 C 1T S is measured on the emitter lead at the soldering point to the pcb Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 335 K/W 2010-04-09 1 BFP410 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 4.5 5 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 2 V, VBE = 0 - 1 30 VCE = 5 V, VBE = 0 , TA = 85 C (verified by random sampling) - 2 50 ICBO - 1 30 IEBO - 0.001 0.6 A hFE 60 95 130 - Collector-base cutoff current VCB = 2 V, I E = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 13 mA, VCE = 2 V, pulse measured 1For calculation of RthJA please refer to Application Note Thermal Resistance 2010-04-09 2 BFP410 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 18 25 - GHz Ccb - 0.09 0.17 Cce - 0.35 - Ceb - 0.45 - Noise figure F - 1.2 - dB IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt Power gain, maximum stable1) G ms - 21.5 - dB |S21| 2 - 18.5 - IP 3 - 23.5 - P-1dB - 10.5 - IC = 20 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 2 GHz Insertion power gain VCE = 2 V, I C = 20 mA, f = 2 GHz, ZS = ZL = 50 Third order intercept point at output 2) dBm VCE = 2 V, I C = 20 mA, f = 2 GHz, ZS = ZL = 50 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 2 GHz 1G ms = |S21 / S12| value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 2IP3 2010-04-09 3 BFP410 Total power dissipation Ptot = (TS) Collector-base capacitance Ccb= (VCB) f = 1MHz 0.3 180 mW pF 120 CCB Ptot 140 0.2 100 0.15 80 0.1 60 40 0.05 20 0 0 20 40 60 80 100 120 C TS 0 0 160 0.5 1 1.5 2 2.5 3 V 4 VCB Transition frequency fT = (IC) Power gain Gma, Gms , |S 21|2 = (f) f = 2 GHz VCE = 2 V, I C = 13 mA VCE = parameter in V 26 45 3 to 4V GHz dB 2V 1V 22 35 20 30 G fT 18 16 25 Gms 14 0.5V 12 20 15 10 |S21| 8 Gma 10 6 5 4 2 0 4 8 12 16 20 24 mA 0 0 32 IC 2 4 6 GHz 10 f 2010-04-09 4 BFP410 Power gain Gma, Gms = (I C) Power gain Gma, Gms = (VCE) VCE = 2V IC = 13 mA f = parameter in GHz f = parameter in GHz 40 40 0.15GHz dB 0.45GHz 32 0.9GHz 28 1.5GHz 24 G G dB 0.15GHz 32 0.45GHz 28 0.9GHz 24 1.5GHz 1.9GHz 1.9GHz 20 2.4GHz 20 2.4GHz 16 3.5GHz 16 3.5GHz 12 5.5GHz 12 5.5GHz 8 10GHz 8 10GHz 4 0 0 4 4 8 12 16 20 24 28 mA 0 0 36 1 2 3 V 4 IC VCE Noise figure F = (IC ) VCE = 2 V, Z S = ZSopt Noise figure F = (I C) VCE = 2 V, f = 2 GHz 4.5 4 dB dB 3.5 3 3 F Fmin 6 2.5 2.5 2 2 1.5 1.5 f= 10.0 GHz f= 5.5 GHz f= 2.4 GHz f= 1.8 GHz f= 0.9 GHz f= 0.45 GHz 1 0.5 0 0 4 8 12 16 20 24 mA ZS=50Ohm ZS=ZSopt 1 0.5 0 0 30 IC 4 8 12 16 mA 24 IC 2010-04-09 5 BFP410 Collector current I C = (VBE) Collector current I C = (VCE) VCE =2 V Parameter IB 10 2 mA 25 10 1 mA 160A IC IC 10 0 15 10 -1 90A 10 10 -2 5 10 -3 20A 10 -4 0.2 0.4 0.6 V 0.8 0 0 1.2 1 2 V 3 VBE 5 VCE DC current gain hFE = (IC) VCE =2 V Base current reverse IB = (VEB) 10 0 10 3 A 10 2 IB hFE 10 -1 10 -2 10 -3 10 1 10 -4 10 0 -1 10 10 0 10 1 mA 10 10 -5 0 2 IC 0.5 1 V 2 VEB 2010-04-09 6 Package SOT343 BFP410 Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2010-04-09 7 BFP410 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-04-09 8