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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features General Description * Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, ON semiconductor's new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. * Positive Temperaure Co-efficient for easy Parallel Operating * High Current Capability * Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A * High Input Impedance * Fast Swiching: EOFF = 6.5 uJ/A * Tightened Parameter Distribution * RoHS Compliant Applications * Sewing Machine, CNC * Home Appliances, Motor-Control C G E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage 20 V IC ICM (1) IF IFM (1) PD Collector Current @ TC = 25oC 80* A Collector Current @ TC = 100oC 40* A Pulsed Collector Current Diode Forward Current @ TC = 25oC Diode Forward Current @ TC = 100oC Pulsed Diode Maximum Forward Current o 120* A 40* A 20* A 120* A W Maximum Power Dissipation @ TC = 25 C 115 Maximum Power Dissipation @ TC = 100oC 58 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 o C C Notes: *Drain current limited by maximum junction temperature 1: Repetitive rating: Pulse width limited by max. junction temperature Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 www.fairchildsemi.com www.onsemi.com 1 FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT December 2016 Symbol Parameter Typ. Max. Unit o RJC(IGBT) Thermal Resistance, Junction to Case - 1.3 RJC(Diode) Thermal Resistance, Junction to Case - 3.27 oC/W C/W RJA Thermal Resistance, Junction to Ambient - 40 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGAF40N60SMD FGAF40N60SMD TO-3PF - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250A - 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - 400 nA IC = 250A, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.5 6.0 V IC = 40A, VGE = 15V - 1.9 - V IC = 40A, VGE = 15V, TC = 175oC - 2.1 - V - 1880 - pF - 180 - pF - 50 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 20 - ns td(off) Turn-Off Delay Time - 92 - ns tf Fall Time - 13 17 ns Eon Turn-On Switching Loss - 0.87 - mJ Eoff Turn-Off Switching Loss - 0.26 0.34 mJ Ets Total Switching Loss - 1.13 - mJ VCC = 400V, IC = 40A, RG = 6, VGE = 15V, Inductive Load, TC = 25oC td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 116 - ns tf Fall Time - 16 - ns VCC = 400V, IC = 40A, RG = 6, VGE = 15V, Inductive Load, TC = 175oC Eon Turn-On Switching Loss - 0.97 - mJ Eoff Turn-Off Switching Loss - 0.60 - mJ Ets Total Switching Loss - 1.57 - mJ Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 www.fairchildsemi.com www.onsemi.com 2 FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V Electrical Characteristics of the Diode Symbol (Continued) Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Min. Typ. Max Unit - 119 - nC - 13 - nC - 58 - nC Unit TC = 25C unless otherwise noted Test Conditions IF = 20A IF =20A, dIF/dt = 200A/s Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 Min. Typ. Max TC = 25oC - 2.3 - TC = 175oC - 1.67 - TC = 175oC - 48.9 - TC = 25oC - 36 - - 110 - TC = 25oC - 46.8 - TC = 175oC - 445 - TC = 175oC V uJ ns nC www.fairchildsemi.com www.onsemi.com 3 FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics VGE= 20V 120 12V 90 VGE= 20V 15V Collector Current, IC [A] Collector Current, IC [A] 120 Figure 2. Typical Output Characteristics 10V 60 30 o TC = 25 C 90 15V 12V 10V 60 8V 30 o 8V 0 0 TC = 175 C 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 120 120 90 60 Common Emitter VGE = 15V 30 o Collector Current, IC [A] Collector Current, IC [A] Common Emitter VCE = 20V TC = 25 C 90 o TC = 175 C 60 30 o TC = 25 C o TC = 175 C 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 15 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3 6 9 12 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4 80A 3 40A 2 IC = 20A 1 25 0 50 75 100 125 150 o Case Temperature, TC [ C] Common Emitter o TC = -40 C 16 12 80A 8 4 0 175 Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 40A IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com www.onsemi.com 4 FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 12 80A 8 40A 4 0 IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 o TC = 175 C 16 12 80A 8 40A 4 IC = 20A 0 20 Figure 9. Capacitance Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 400V 12 VCC = 200V 300V 9 6 3 Cres 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 120 Figure 12. Turn-on Characteristics vs. Gate Resistance 200 100 100 10s tr 100s 10 1ms Switching Time [ns] Collector Current, Ic [A] 40 80 Gate Charge, Qg [nC] 10 ms DC 1 *Notes: o 0.1 1. TC = 25 C td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A o o TC = 25 C 2. TJ =175 C 3. Single Pulse o TC = 175 C 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1 1000 0 Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 10 20 30 40 Gate Resistance, RG [] 50 www.fairchildsemi.com www.onsemi.com 5 FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 6 o TC = 25 C 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o Switching Time [ns] Switching Time [ns] td(off) TC = 175 C 100 tr 10 td(on) o TC = 25 C o TC = 175 C 1 0 10 20 30 40 1 20 50 30 40 Gate Resistance, RG [] 50 60 70 80 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 5 Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6 o Eon 1 Eoff IC = 40A TC = 25 C o TC = 25 C o TC = 175 C 1 20 30 40 50 60 Common Emitter VCC = 400V, VGE = 15V o TC = 175 C 70 0.1 80 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [] 50 Figure 18. Turn off Switching SOA Characteristics 200 6 Collector Current, IC [A] Switching Loss [mJ] 100 Eon 1 Eoff Common Emitter VGE = 15V, RG = 6 o 10 Safe Operating Area TC = 25 C o VGE = 15V, TC = 175 C o TC = 175 C 0.1 20 1 30 40 50 60 70 80 Collector Current, IC [A] Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 www.fairchildsemi.com www.onsemi.com 6 FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Power Dissipation 50 120 Common Emitter VGE = 15V 40 Power Dissipation, PD [W] Collector Current, Ic[A] Common Emitter VGE = 15V 30 20 10 0 25 50 75 100 125 150 o Case Temperature, TC [ C] 90 60 30 0 25 175 Figure 21. Load Current Vs. Frequency 75 100 125 150 o Case Temperature, TC [ C] 175 Figure 22. Forward Characteristics 100 100 VCC = 400V 90 load Current : peak of square wave 80 Duty cycle : 50% 70 T = 100 C Forward Current, IF [A] Collector Current, IC [A] 50 o C Powe Dissipation = 58 W 60 50 o Tc = 100 C 40 30 o TC = 175 C 10 o TC = 25 C 20 10 0 1k 1 10k 100k Switching Frequency, f [Hz] 1M 0 Figure 23. Reverse Current 1 2 3 Forward Voltage, VF [V] 4 Figure 24. Stored Charge 1000 700 Reverse Currnet, IR [A] Stored Recovery Charge, Qrr [nC] o 100 o TC = 175 C 10 o TC = 100 C 1 0.1 o 0.01 TC = 25 C 1E-3 0 100 200 300 400 Reverse Voltage, VR [V] 500 TC = 25 C 600 o TC = 175 C 500 400 300 di/dt = 200A/s 200 di/dt = 100A/s 100 0 600 0 Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 5 10 15 20 25 30 35 Forwad Current, IF [A] 40 45 www.fairchildsemi.com www.onsemi.com 7 FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics FGAF40N60SMD -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 25. Reverse Recovery Time 200 o Reverse Recovery Time, trr [ns] TC = 25 C o TC = 175 C 150 100 di/dt = 100A/s di/dt = 200A/s 50 0 0 5 10 15 20 25 30 35 Forward Current, IF [A] 40 45 Figure 26.Transient Thermal Impedance of IGBT 2 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 PDM t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 27.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 4 0.5 1 0.2 0.1 0.05 0.1 0.02 PDM 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] Semiconductor Components Industries, LLC, 2016 FGAF40N60SMD * Rev. 1.4 www.fairchildsemi.com www.onsemi.com 8 15.70 15.30 9.90 4.60 4.40 3.20 2.80 3.80 3.40 7.75 10.20 9.80 16.70 16.30 26.70 26.30 14.70 14.30 1.93 15.00 14.60 1 2 23.20 22.80 16.70 16.30 2.20 1.80 2.70 2.30 3 2.20 (3X) 1.80 4.20 3.80 3.50 3.10 0.95 (3X) 0.65 5.75 5.15 5.75 5.15 5.70 5.30 2.20 1.80 3.50 3.10 NOTES: A. THIS PACKAGE CONFORMS TO SC94 JEITA PACKAGING STANDARD. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. D. PIN 2 CONNECTS TO DAP. E. DRAWING FILE NAME: TO3PFA03REV2 1.10 0.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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