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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
December 2016
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
1
Absolute Maximum Ratings
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage 20 V
ICCollector Current @ TC = 25oC80* A
Collector Current @ TC = 100oC40* A
ICM (1) Pulsed Collector Current 120* A
IFDiode Forward Current @ TC = 25oC40* A
Diode Forward Current @ TC = 100oC20* A
IFM (1) Pulsed Diode Maximum Forward Current 120* A
PDMaximum Power Dissipation @ TC = 25oC115 W
Maximum Power Dissipation @ TC = 100oC58 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Notes:
*Drain current limited by maximum junction temperature
1: Repetitive rating: Pulse width limited by max. junction temperature
FGAF40N60SMD
600 V, 40 A Field Stop IGBT
G
E
C
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Swiching: EOFF = 6.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Sewing Machine, CNC
• Home Appliances, Motor-Control
General Description
Using novel field stop IGBT technology, ON semiconductor’s
new series of field stop 2nd ge neration IGBTs offer the optimum
performance for solar inverter, UPS, welder and PFC applica-
tions where low conduction and switching losses are essential.
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
2
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction to Case -1.3 oC/W
RJC(Diode) Thermal Resistance, Junction to Case -3.27 oC/W
RJA Thermal Resistance, Junction to Ambient -40 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGAF40N60SMD FGAF40N60SMD TO-3PF - - 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown V oltage VGE = 0V, IC = 250A600 - - V
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250A-0.6 -V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 3.5 4.5 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -1.9 - V
IC = 40A, VGE = 15V,
TC = 175oC-2.1 -V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-1880 -pF
Coes Output Capacitance -180 -pF
Cres Reverse T r ansfer Capacitance -50 -pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 40A,
RG = 6, VGE = 15V,
Inductive Load, TC = 25oC
-12 -ns
trRise T ime -20 -ns
td(off) Turn-Off Delay Time -92 -ns
tfFall T ime -13 17 ns
Eon Turn-On Switching Loss -0.87 -mJ
Eoff Turn-Off Switching Loss -0.26 0.34 mJ
Ets Total Switching Loss -1.13 -mJ
td(on) Turn-On Delay Time
VCC = 400V, IC = 40A,
RG = 6, VGE = 15V,
Inductive Load, TC = 175oC
-15 -ns
trRise T ime -22 -ns
td(off) Turn-Off Delay Time -116 -ns
tfFall T ime -16 -ns
Eon Turn-On Switching Loss -0.97 -mJ
Eoff Turn-Off Switching Loss -0.60 -mJ
Ets Total Switching Loss -1.57 -mJ
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
3
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions Min. Typ. Max Unit
QgTotal Gate Charge VCE = 400V, IC = 40A,
VGE = 15V
-119 -nC
Qge Gate to Emitter Charge -13 -nC
Qgc Gate to Collector Charge -58 -nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 20A TC = 25oC - 2.3 -V
TC = 175oC - 1.67 -
Erec Reverse Recovery Energy
IF =20A, dIF/dt = 200A/s
TC = 175oC - 48.9 -uJ
trr Diode Reverse Recovery Time TC = 25oC - 36 -ns
TC = 175oC - 110 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 46.8 -nC
TC = 175oC - 445 -
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
4
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0246810
0
30
60
90
120
8V
VGE= 20V
TC = 25oC
15V
12V
10V
Collector Current, IC [A]
Collector -Emitter Voltage, V CE [V]
0246810
0
30
60
90
120
8V
VGE= 20V
TC = 175oC
15V
12V 10V
Collector Current, IC [A]
Collector -Emitter Voltage, V CE [V]
012345
0
30
60
90
120
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Collec tor-E mitter Voltage, VCE [V ]
03691215
0
30
60
90
120 Common Em itter
VCE = 20V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Gate -E mitter Voltage,VGE [V]
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
80A
40A
Common Emitter
TC = -40oC
Collect o r -Emitter Voltag e, VCE [V]
Gate-Em itter V oltag e, VGE [V ]
25 50 75 100 125 150 175
1
2
3
4
80A
40A
IC = 20A
Comm on Em itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [oC]
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
5
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
80A
40A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Em i tter V oltag e, VGE [V ]
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
80A
40A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, VCE [V]
Gate-Em i tter V oltag e, VGE [V ]
0.1 1 10
0
1000
2000
3000
4000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V] 30
0 40 80 120
0
3
6
9
12
15
400V
Common E m itter
TC = 25oC
300V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Q
g
[nC]
0 1020304050
1
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
td(on)
tr
Switching Time [ns]
Gate Re s istance , R
G
[]
1 10 100 1000
0.01
0.1
1
10
100
200
1ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ =175oC
3. Single Pulse
10s
100s
Collector Current, Ic [A]
Collector -E mitter Voltage, VCE [V ]
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
6
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
0 1020304050
1
10
100
1000
Co mmon E mitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG []
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
VGE = 15V, R G = 6
TC = 25oC
TC = 175oC tr
td(on)
Switching Time [ns]
Collec to r C u rre n t, IC [A]
0 1020304050
0.1
1
5
Comm on Em itter
VCC = 400V, V GE = 15V
IC = 40A
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance
,
R
G
[
]
20 30 40 50 60 70 80
1
10
100
1000
Common Em itter
VGE = 15 V, R G = 6
TC = 25oC
TC = 175oC
td(off)
tf
Switch ing Time [ns]
Collector Current
,
I
C
[
A
]
20 30 40 50 60 70 80
0.1
1
6
Comm on Emitter
VGE = 15V, R G = 6
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Collec t or C u rre n t, IC [A ]
1 10 100 1000
1
10
100
200
Safe Operating Area
VGE = 1 5V, TC = 175oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
7
Typical Performance Characteristics
Figure 19. Current Derating Figure 20. Power Dissipation
Figure 21. Load Current Vs. Frequency Figure 22. Forward Characteristics
Figure 23. Reverse Current Figure 24. Stored Charge
25 50 75 100 125 150 175
0
30
60
90
120
Comm on E m itter
VGE = 15V
Power Dissipation , PD [W]
Case Temp erature, TC [oC]
25 50 75 100 125 150 175
0
10
20
30
40
50
Co m mon Emitter
VGE = 15V
Collector Current, Ic[A]
Case Temperature, TC [oC]
01234
1
10
100
TC = 175oC
TC = 25oC
Forward Voltage, VF [V]
Forward Current, IF [A]
1k 10k 100k 1M
0
10
20
30
40
50
60
70
80
90
100
Duty cy cle : 50%
TC = 100oC
Powe D issip atio n = 58 W
VCC = 400 V
load Current : peak of square wave
Collector Current, IC [A]
Switching Frequency, f [Hz]
Tc = 100oC
0 5 10 15 20 25 30 35 40 45
0
100
200
300
400
500
600
700
TC = 25oC
TC = 175oC
di/dt = 2 00A /sdi/dt = 100A/s
Stored Recovery Charge, Qrr [nC]
Forwad Current, IF [A]
0 100 200 300 400 500 600
1E-3
0.01
0.1
1
10
100
1000
TC = 25oC
TC = 175oC
TC = 100oC
Reverse Currnet, IR [A]
Reverse Voltage, V
R
[V]
FGAF40N60SMD — 600 V, 40 A Field Stop IGBT
Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com
FGAF40N60SMD • Rev. 1.4 www.onsemi.com
8
Typical Performance Characteristics
Figure 25. Reverse Recovery Time
Figure 26.Transient Thermal Impedance of IGBT
Figure 27.Transient Thermal Impedance of Diode
0 5 10 15 20 25 30 35 40 45
0
50
100
150
200
TC = 25oC
TC = 175oC
di/dt = 200A /s
di/dt = 100A/s
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
1E-5 1E-4 1E-3 0.01 0.1
1E-3
0.01
0.1
1
2
0.01
0.02
0.1
0.05
0.2
sin gle puls e
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
1E-5 1E-4 1E-3 0.01 0.1 1 10 100
0.01
0.1
1
4
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zth jc + TC
0.5
t1
PDM
t2
5.70
5.30
2.20
1.80
3.50
3.10
15.70
15.30
3.80
3.40
4.60
4.40
26.70
26.30
16.70
16.30 14.70
14.30
2.70
2.30
15.00
14.60
4.20
3.80
5.75
5.15
5.75
5.15
2.20
1.80
(3X)
0.95
0.65
(3X)
9.90
7.75
1.93
123
1.10
0.80
2.20
1.80
3.50
3.10
10.20
9.80
16.70
16.30
3.20
2.80
23.20
22.80
NOTES:
A.
THIS PACKAGE CONFORMS TO SC94
JEITA PACKAGING STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. PIN 2 CONNECTS TO DAP.
E. DRAWING FILE NAME: TO3PFA03REV2
www.onsemi.com
1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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