To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2014 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH75T65SHD Rev. C3
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
February 2015
Absolute Maximum Ratings
Symbol Description FGH75T65SHD_F155 Unit
VCES Collector to Emitter Voltage 650 V
VGES
Gate to Emitter Voltage 20 V
Transient Gate to Emitter Voltage ± 30 V
IC
Collector Current @ TC = 25oC 150 A
Collector Current @ TC = 100oC 75 A
ILM (1) Pulsed Collector Current @ TC = 25oC 225 A
ICM (2) Pulsed Collector Current 225 A
IF
Diode Forward Current @ TC = 25oC 75 A
Diode Forward Current @ TC = 100oC 50 A
IFM (2) Pulsed Diode Maximum Forward Current 225 A
PD
Maximum Power Dissipation @ TC = 25oC 455 W
Maximum Power Dissipation @ TC = 100oC 227 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
TC = 25°C unless otherwise noted
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 225 A, RG = 20 Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
FGH75T65SHD
650 V, 75 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature: TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
GC
E
TO-247
long leads
G
E
C
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
©2014 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGH75T65SHD Rev. C3
Thermal Characteristics
Symbol Parameter FGH75T65SHD_F155 Unit
RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.33 oC/W
RJC(Diode) Thermal Resistance, Junction to Case, Max. 0.65 oC/W
RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH75T65SHD_F155 FGH75T65SHD TO-247 G03 Tube - - 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA 650 - - V
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage IC = 1 mA, Reference to 25oC- 0.6 - V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 75 mA, VCE = VGE 4.0 5.5 7.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 75 A, VGE = 15 V - 1.6 2.1 V
IC = 75 A, VGE = 15 V,
TC = 175oC- 2.28 - V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
- 3680 - pF
Coes Output Capacitance - 179 - pF
Cres Reverse Transfer Capacitance - 43 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 75 A,
RG = 3 , VGE = 15 V,
Inductive Load, TC = 25oC
- 28 - ns
trRise Time - 56 - ns
td(off) Turn-Off Delay Time - 80 - ns
tfFall Time - 14.4 - ns
Eon Turn-On Switching Loss - 2.4 - mJ
Eoff Turn-Off Switching Loss - 0.72 - mJ
Ets Total Switching Loss - 3.12 - mJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 75 A,
RG = 3 , VGE = 15 V,
Inductive Load, TC = 175oC
- 26.4 - ns
trRise Time - 58.4 - ns
td(off) Turn-Off Delay Time - 86.4 - ns
tfFall Time - 13.6 - ns
Eon Turn-On Switching Loss - 3.7 - mJ
Eoff Turn-Off Switching Loss - 0.98 - mJ
Ets Total Switching Loss - 4.68 - mJ
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
©2014 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGH75T65SHD Rev. C3
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions Min. Typ. Max Unit
QgTotal Gate Charge
VCE = 400 V, IC = 75 A,
VGE = 15 V
- 123 - nC
Qge Gate to Emitter Charge - 22.6 - nC
Qgc Gate to Collector Charge - 44.9 - nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 50 A TC = 25oC - 2.2 2.7 V
TC = 175oC - 1.8 -
Erec Reverse Recovery Energy
IF =50 A, dIF/dt = 200 A/s
TC = 175oC - 60 - uJ
trr Diode Reverse Recovery Time TC = 25oC - 43.4 - ns
TC = 175oC - 207 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 87.9 - nC
TC = 175oC - 1243 -
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
©2014 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGH75T65SHD Rev. C3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
©2014 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGH75T65SHD Rev. C3
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
©2014 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGH75T65SHD Rev. C3
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
FGH75T65SHD 650 V, 75 A Field Stop Trench IGBT
©2014 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGH75T65SHD Rev. C3
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
Figure 22.Transient Thermal Impedance of Diode
t
1
P
DM
t
2
t
1
P
DM
t
2
15.87
15.37
E
20.82
20.32
E
3.93
3.69
E
20.25
19.75
E
1.60
5.56
11.12
5.20
4.96
1.35
1.17
5.58
5.34
E
4.13
3.53
1.87
1.53
(2X)
2.77
2.43
0.254
M
B A
M
0.254
M
B A
M
A
4.82
4.58
E
2.66
2.29
0.71
0.51
B
12.81
E
3.65
3.51
E
6.85
6.61
13.08 MIN
1.35
0.51
13
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E
DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247G03_REV02
1 3
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
