Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1201 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25) 2 3. EMITTER Collector current : -800 mA ICM Collector-base voltage V V(BR)CBO : -120 Operating and storage junction temperature range 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA, IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A DC current gain hFE(1) VCE=-5V, IC=-100mA VCE(sat) IC=-500mA, IB=-50mA -1 V Base-emitter voltage VBE VCE=-5V, IC=-500mA -1 V Transition frequency fT VCE=-5V, IC=-100mA Cob VCB=-10V, IE=0, f=1MHz Collector-emitter saturation voltage Collector output capacitance 80 240 120 30 CLASSIFICATION OF hFE(1) Rank Range Marking MHz O Y 80-160 120-240 DO DY pF