CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1993 10-41
SEMICONDUCTOR
DG506A, DG507A
DG508A, DG509A
CMOS Analog Multiplexers
Features
• Low Power Consumption
• TTL and CMOS Compatible Address and Enable Inputs
• 44V Maximum Power Supply Rating
• High Latch-Up Immunity
• Break-Before-Make Switching
• Alternate Source
Applications
• Data Acquisition Systems
• Communication Systems
• Signal Multiplexing/Demultiplexing
• Audio Signal Multiplexing
File Number 3137
December 1993
Pinouts
DG506A (PDIP, CDIP, SOIC)
TOP VIEW DG507A (PDIP, CDIP, SOIC)
TOP VIEW DG508A (PDIP, CDIP, SOIC)
TOP VIEW DG509A (PDIP, CDIP, SOIC)
TOP VIEW
V+
NC
NC
S16
S15
S14
S13
S12
S11
S10
S9
GND
NC
A3
D
S8
S7
S6
S5
S3
S1
EN
A0
A1
A2
V-
S4
S2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
V+
DB
NC
S8B
S7B
S6B
S5B
S4B
S3B
S2B
S1B
GND
NC
NC
DA
S8A
S7A
S6A
S5A
S3A
S1A
EN
A0
A1
A2
V-
S4A
S2A
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
A0
EN
V-
S1
S2
S3
D
S4
A1
GND
V+
S5
S6
S7
S8
A2
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
A0
EN
V-
S1A
S2A
S3A
DA
S4A
A1
V+
S1B
S2B
S3B
S4B
DB
GND
Description
The DG506A, DG507A, DG508A and DG509A are CMOS
monolithic 16-channel/dual 8-channel and 8-channel/dual
4-channel analog multiplexers, which can also be used as
demultiplexers. An enable input is provided. When the
enable input is high, a channel is selected by the address
inputs, and when low, all channels are off.
A channel in the ON state conducts current equally well in
both directions. In the OFF state each channel blocks volt-
ages up to the supply rails. The address inputs and the
enable input are TTL and CMOS compatible over the full
specified operating temperature range.
The DG506A, DG507A, DG508A and DG509A are pinout
compatible with the industry standard devices.
Ordering Information
PART NUMBER TEMP. RANGE PACKAGE
DG506AAK -55oC to +125oC 28 Lead Ceramic DIP
DG506AAK/883B -55oC to +125oC 28 Lead Ceramic DIP
DG506ABK -25oC to +85oC 28 Lead Ceramic DIP
DG506ABY -25oC to +85oC 28 Lead Plastic DIP
DG506ACJ 0oC to +70oC 28 Lead Plastic DIP
DG506ACK 0oC to +70oC 28 Lead Ceramic DIP
DG506ACY 0oC to +70oC 28 Lead SOIC
DG507AAK -55oC to +125oC 28 Lead Ceramic DIP
DG507AAK/883B -55oC to +125oC 28 Lead Ceramic DIP
DG507ABK -25oC to +85oC 28 Lead Ceramic DIP
DG507ABY -25oC to +85oC 28 Lead Plastic DIP
DG507ACJ 0oC to +70oC 28 Lead Plastic DIP
DG507ACK 0oC to +70oC 28 Lead Ceramic DIP
DG507ACY 0oC to +70oC 28 Lead SOIC
DG508AAK -55oC to +125oC 16 Lead Ceramic DIP
DG508AAK/883B -55oC to +125oC 16 Lead Ceramic DIP
DG508ABK -25oC to +85oC 16 Lead Ceramic DIP
DG508ABY -25oC to +85oC 16 Lead Plastic DIP
DG508ACJ 0oC to +70oC 16 Lead Plastic DIP
DG508ACK 0oC to +70oC 16 Lead Ceramic DIP
DG508ACY 0oC to +70oC 16 Lead SOIC (W)
DG509AAK -55oC to +125oC 16 Lead Ceramic DIP
DG509AAK/883B -55oC to +125oC 16 Lead Ceramic DIP
DG509ABK -25oC to +85oC 16 Lead Ceramic DIP
DG509ABY -25oC to +85oC 16 Lead Plastic DIP
DG509ACJ 0oC to +70oC 16 Lead Plastic DIP
DG509ACK 0oC to +70oC 16 Lead Ceramic DIP
DG509ACY 0oC to +70oC 16 Lead SOIC (W)
PART NUMBER TEMP. RANGE PACKAGE
10-42
DG506A, DG507A, DG508A, DG509A
Schematic Diagram
Functional Block Diagrams
DG506A
4 Line Binary Address Inputs
(0 0 0 1) and EN = 5V
Above example shows channel 2 turned ON.
DG507A
3 Line Binary Address Inputs
(0 0 0) and EN = 5V
Above example shows channels 1A and 1B turned ON.
DG508A
3 Line Binary Address Inputs
(1 0 1) and EN = 1
Above example shows channel 6 turned ON.
DG509A
2 Line Binary Address Inputs
(0 0) and EN = 1
Above example shows channels 1A and 1B turned ON.
S1
S3
S2
S4
S5
S6
S7
S8
S9
S10
S11
S12
S13
S14
S15
A0
D
ADDRESS DECODER
1 OF 16 ENABLE
1 OF 4
A1A2A3EN
S16
S1A
S3A
S2A
S4A
S5A
S6A
S7A
S8A
S1B
S2B
S3B
S4B
S5B
S6B
S7B
A0
ADDRESS DECODER
1 OF 8 ENABLE
1 OF 2
A1A2EN (ENABLE INPUT)
S8B
DA
DB
S1
S3
S2
S4
S5
S6
S7
S8A0
D
ADDRESS DECODER
1 OF 8
A1A2EN (ENABLE INPUT)
S1A
S3A
S2A
S4A
S1B
S2B
S3B
S4B
DA
DB
LOGIC TRIP
POINT REF
LOGIC INTERFACE
AND LEVEL SHIFTER
+
-
DECODER
AX
V+
TYPICAL
SWITCH
SX
DX
V+
GND
LOGIC AX
INPUT OR EN
V-
10-43
Specifications DG506A, DG507A, DG508A, DG509A
Absolute Maximum Ratings Thermal Information
V+ to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25V
VIN to Ground (Note 1) . . . . . . . . . . . . . . . . . . . . . (V- -2V), (V+ +2V)
VS or VD to V+ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . +2, (V- -2V)
VS or VD to V- (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .-2, (V+ +2V)
Current, any Terminal Except S or D . . . . . . . . . . . . . . . . . . . .30mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . .20mA
Peak Current, S or D (Pulsed at 1ms, 10% Duty Cycle Max.) .40mA
Storage Temperature
C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +125oC
A & B Suffix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance θJA θJC
16 Lead Ceramic DIP Package. . . . . . . . 77oC/W 23oC/W
28 Lead Ceramic DIP Package. . . . . . . . 55oC/W 17oC/W
16 Lead Plastic DIP Package . . . . . . . . . 100oC/W -
28 Lead Plastic DIP Package . . . . . . . . . 60oC/W -
16 Lead SOIC (W) Package . . . . . . . . . . 100oC/W -
28 Lead SOIC Package. . . . . . . . . . . . . . 70oC/W -
Operating Temperature Range
C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC
B Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25oC to +85oC
A Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55oC to +125oC
Junction Temperature
Ceramic DIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TA = +25oC, V+ = +15V, V- = -15V, GND = 0V, VEN = 2.4V,
Unless Otherwise Specified
PARAMETERS TEST CONDITIONS
DG506AA, DG507AA,
DG508AA, DG509AA DG506AB/C, DG507AB/C,
DG508AB/C, DG509AB/C
UNITSMIN (NOTE 2)
TYP MAX MIN (NOTE 2)
TYP MAX
DYNAMIC CHARACTERISTICS
Switching Time of Multi-
plexer, tTRANSITION
See Figure 3 - 0.6 1 - 0.6 - µs
Break-Before-Make
Interval, tOPEN
See Figure 5 - 0.2 - - 0.2 - µs
Enable Turn-On Time,
tON(EN)
See Figure 4 - 1 1.5 - 1 - µs
Enable Turn-Off Time,
tOFF(EN)
See Figure 4 - 0.4 1.0 - 0.4 - µs
Off Isolation, OIRR VEN = 0V, RL = 1kΩ, CL = 15pF, VS =
7VRMS, f = 500kHz (Note 4) -68--68-dB
Source Off Capacitance,
CS(OFF)
VS = 0V, VEN = 0V, f = 140kHz
DG506A, DG507A - 6 - - 6 - pF
DG508A, DG509A - 5 - - 5 - pF
Drain Off Capacitance,
CD(OFF)
VD = 0V, VEN = 0V, f = 140kHz
DG506A - 45 - - 45 - pF
DG507A - 23 - - 23 - pF
DG508A - 25 - - 25 - pF
DG509A - 12 - - 12 - pF
Charge Injection, Q See Figure 6
DG506A, DG507A - 6 - - 6 - pC
DG508A, DG509A - 4 - - 4 - pC
INPUT
Address Input Current, In-
put Voltage High, IAH
VA = 2.4V -10 -0.002 - -10 -0.002 - µA
VA = 15V - 0.006 10 - 0.006 10 µA
Address Input Current
Input Voltage Low, IAL
VEN = 2.4V VA = 0V -10 -0.002 - -10 -0.002 - µA
VEN = 0V -10 -0.002 - -10 -0.0002 - µA
10-44
Specifications DG506A, DG507A, DG508A, DG509A
SWITCH
Analog Signal Range,
VANALOG
(Note 6) -15 - +15 -15 - +15 V
Drain Source On Resis-
tance, RDS(ON)Sequence Each
Switch On
VAL = 0.8V
VAH = 2.4V
IS = -200µA,
VD = +10V - 270 400 - 270 450 Ω
IS = -200µA,
VD = -10V - 230 400 - 230 450 Ω
Greatest Change in Drain
Source On Resistance Be-
tween Channels, ∆RDS(ON)
-10V ≤ VS≤ +10V - 6 - - 6 - %
Source Off Leakage
Current, IS(OFF)
VEN = 0V VS = +10V, VD = -10V -1 0.002 1 -5 0.002 5 nA
VS = -10V, VD = +10V -1 -0.005 1 -5 -0.005 5 nA
Drain Off Leakage Current,
ID(OFF)
VEN = 0V
DG506A VS = -10V, VD = +10V -10 0.02 10 -20 0.02 20 nA
VS = +10V, VD = -10V -10 -0.03 10 -20 -0.03 20 nA
DG507A VS = -10V, VD = +10V -5 0.007 5 -10 0.007 10 nA
VS = +10V, VD = -10V -5 -0.015 5 -10 -0.015 10 nA
DG508A VS = -10V, VD = +10V - 0.01 10 - 0.01 20 nA
VS = +10V, VD = -10V -10 -0.015 - -20 -0.015 - nA
DG509A VS = -10V, VD = +10V - 0.005 10 - 0.005 20 nA
VS = +10V, VD = -10V -10 -0.008 - -20 -0.008 - nA
Drain On Leakage Current,
ID(ON)
(Note 5)
Sequence Each
Switch On
VAL = 0.8V
VAH = 2.4V
DG506A VD = VS(ALL) = +10V -10 0.03 10 -20 0.03 20 nA
VD = VS(ALL) = -10V -10 -0.06 10 -20 -0.06 20 nA
DG507A VD = VS(ALL) = +10V -5 0.015 5 -10 0.015 10 nA
VD = VS(ALL) = -10V -5 -0.03 5 -10 -0.03 10 nA
DG508A VD = VS(ALL) = +10V - 0.015 10 - 0.015 20 nA
VD = VS(ALL) = -10V -10 -0.03 - -20 -0.03 - nA
DG509A VD = VS(ALL) = +10V - 0.007 10 - 0.007 20 nA
VD = VS(ALL) = -10V -10 -0.015 - -20 -0.015 - nA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ VEN = 5.0V, VA = 0V - 1.3 2.4 - 1.3 2.4 mA
Negative Supply Current, I- VEN = 5.0V, VA = 0V -1.5 -0.7 - -1.5 -0.7 - mA
Positive Supply Current, I+
Standby VEN = 0V, VA = 0V - 1.3 2.4 - 1.3 2.4 mA
Negative Supply Current, I-
Standby VEN = 0V, VA = 0V -1.5 -0.7 - -1.5 -0.7 - mA
Electrical Specifications TA = +25oC, V+ = +15V, V- = -15V, GND = 0V, VEN = 2.4V,
Unless Otherwise Specified (Continued)
PARAMETERS TEST CONDITIONS
DG506AA, DG507AA,
DG508AA, DG509AA DG506AB/C, DG507AB/C,
DG508AB/C, DG509AB/C
UNITSMIN (NOTE 2)
TYP MAX MIN (NOTE 2)
TYP MAX
∆RDS ON()
R
DS(ON)MAX RDS ON )MIN()
−
R
DS ON()AVG
=
10-45
Specifications DG506A, DG507A, DG508A, DG509A
Electrical Specifications TA = Over Operating Temperature Range, V+ = +15V, V- = -15V, GND = 0V, VEN = 2.4V,
Unless Otherwise Specified
PARAMETERS TEST CONDITIONS
DG506AA, DG507AA,
DG508AA, DG509AA
DG506AB/C,
DG507AB/C,
DG508AB/C,
DG509AB/C
UNITSMIN (NOTE 2)
TYP MAX MIN (NOTE 2)
TYP MAX
INPUT
Address Input Current, In-
put Voltage High, IAH
VA = 2.4V -30 - - -30 - - µA
VA = 15V - - 30 - - 30 µA
Address Input Current In-
put Voltage Low, IAL
VEN = 2.4V VA = 0V -30 - - -30 - - µA
VEN = 0V -30 - - -30 - - µA
SWITCHING CHARACTERISTICS
Analog Signal Range,
VANALOG
(Note 6) -15 - +15 -15 - +15 V
Drain Source On Resis-
tance, RDS(ON)Sequence Each
Switch On
VAL = 0.8V
VAH = 2.4V
IS = -200µA, VD = +10V - - 500 - - 550 Ω
IS = -200µA, VD = -10V - - 500 - - 550 Ω
Source Off Leakage
Current, IS(OFF)
VEN = 0V VS = +10V, VD = -10V - - 50 - - 50 nA
VS = -10V, VD = +10V -50 - - -50 - - nA
Drain Off Leakage Current,
ID(OFF)
VEN = 0V
DG506A VS = -10V, VD = +10V - - 300 - - 300 nA
VS = +10V, VD = -10V -300 - - -300 - - nA
DG507A VS = -10V, VD = +10V - - 200 - - 200 nA
VS = +10V, VD = -10V -200 - - -200 - - nA
DG508A VS = -10V, VD = +10V - - 200 - - 200 nA
VS = +10V, VD = -10V -200 - - -200 - - nA
DG509A VS = -10V, VD = +10V - - 100 - - 100 nA
VS = +10V, VD = -10V -100 - - -100 - - nA
Drain On Leakage Current,
ID(ON)
(Note 5)
Sequence Each
Switch On
VAL = 0.8V
VAH = 2.4V
DG506A VD = VS(ALL) = +10V - - 300 - - 300 nA
VD = VS(ALL) = -10V -300 - - -300 - - nA
DG507A VD = VS(ALL) = +10V - - 200 - - 200 nA
VD = VS(ALL) = -10V -200 - - -200 - - nA
DG508A VD = VS(ALL) = +10V - - 200 - - 200 nA
VD = VS(ALL) = -10V -200 - - -200 - - nA
DG509A VD = VS(ALL) = +10V - - 100 - - 100 nA
VD = VS(ALL) = -10V -100 - - -100 - - nA
NOTES:
1. Signals on VS, VD or VIN exceeding V+ or V- will be clamped by internal diodes. Limit diode forward current to maximum current ratings.
2. Typical values are for design aid only, not guaranteed and not subject to production testing.
3. The algebraic convention whereby the most negative value is a minimum, and the most positive value is a maximum, is used in this data sheet.
4. Off isolation = 20log |VS|/|VD|, where VS = input to Off switch, and VD = output due to VS.
5. ID(ON) is leakage from driver into “ON” switch.
6. Parameter not tested. Parameter guaranteed by design or characterization.
10-46
DG506A, DG507A, DG508A, DG509A
Typical Performance Curves
FIGURE 1. RDS(ON) vs ANALOG SIGNAL VOLTAGE vs
SUPPLY VOLTAGE FIGURE 2. TYPICAL RDS(ON) VARIATION WITH TEMPERATURE
NOTE: 1. Similar connections for DG508A
FIGURE 3A. tTRANSITION SWITCHING TIME TEST CIRCUIT
NOTE: 2. Similar connections for DG509A
FIGURE 3B. tTRANSITION SWITCHING TIME TEST CIRCUIT
FIGURE 3C. tTRANSITION SWITCHING TIME WAVEFORMS
ANALOG SIGNAL VOLTAGE (V)
550
-10 -5 0 5 10 15
RDS(ON) (Ω)
500
450
400
350
300
250
200
150
100
50
0
-15
V+ = +15V, V- = -15V
V+ = +10V, V- = -10V
V+ = +12V, V- = -12V
V+ = +7.5V, V- = -7.5V
TEMPERATURE (oC)
-25 0 45 70 100 125-55 20
RDS(ON) (Ω)
V+ = +15V V- = -15V
VEN = 2.4V
IO = -200µA+10V SIGNALS
+10V SIGNALS
400
300
200
100
0
EN
A2
S2 THRU S15
A1
A0
LOGIC
INPUT
50Ω
+2.4V
SWITCH
OUTPUT
35pF
1MΩ
+15V
-15V
+10V
±10V
GND V-
DG506A S1
S16
D
V+
VD
A3(NOTE 1)
EN
S1A THRU S8A,
A1
A0
LOGIC
INPUT
50Ω
+2.4V
SWITCH
OUTPUT
35pF
1MΩ
+15V
-15V
+10V
±10V
GND V-
DG507A S1B
S8B
DB
V+
DA
S2B, AND S7B
VD
A2
(NOTE 2)
3V
50%
0
VS1
0.8VS1
0
0.8VS8
VS8
SWITCH
OUTPUT
VD
TRANSITION
S1 ON
S8 ON
TRANSITION
LOGIC INPUT
tR < 20ns
tF < 20ns
10-47
DG506A, DG507A, DG508A, DG509A
NOTE: 1. Similar connections for DG508A
FIGURE 4A. ENABLE tON and tOFF SWITCHING TIME TEST CIRCUIT
NOTE: 2. Similar connections for DG509A
FIGURE 4B. ENABLE tON and tOFF SWITCHING TIME TEST CIRCUIT
FIGURE 4C. ENABLE tON and tOFF SWITCHING TIME WAVEFORMS
NOTE: 3. Similar connections for DG508A, DG509A.
FIGURE 5A. tOPEN (BREAK-BEFORE-MAKE) SWITCHING TIME
TEST CIRCUIT
FIGURE 5B. tOPEN (BREAK-BEFORE-MAKE) SWITCHING TIME
WAVEFORMS
Typical Performance Curves
(Continued)
EN
A2
S2 THRU S16
A1
A0
EN 50Ω
SWITCH
OUTPUT
35pF1kΩ
+15V
-15V
GND V-
DG506A S1
DB
V+
VO
-5V
A3(NOTE 1)
EN
A0
S1A THRU S8A,
A1
A2
EN 50Ω
SWITCH
OUTPUT
35pF1kΩ
+15V
-15V
GND V-
DG507A S1B
DB
V+
VO
-5V
DA,
S2B THRU S8B
(NOTE 2)
3V
50%
0V
SWITCH
OUTPUT
VO
tR < 20ns
tF < 20ns
0V
VO
tON (EN) tOFF (EN)
EN 50%
0.9VO
0.1VO
EN
A1
A2
A3
LOGIC
INPUT
50Ω
+2.4V
SWITCH
OUTPUT
35pF1kΩ
+15V
-15V
GND V-
DG506A
ALL S AND DA
DB
V+
VD
DG507A
A0
+5V
(NOTE 3)
3V
50%
0V
SWITCH
OUTPUT
VO
tR < 20ns
tF < 20ns
0V
LOGIC
tOPEN
INPUT
50%
10-48
DG506A, DG507A, DG508A, DG509A
NOTE: 1. Similar connections for DG508A
FIGURE 6A. CHARGE INJECTION TEST CIRCUIT
NOTE: 2. Similar connections for DG509A
FIGURE 6B. CHARGE INJECTION TEST CIRCUIT
FIGURE 6C. CHARGE INJECTION WAVEFORMS
Typical Performance Curves
(Continued)
EN
A2
S1
A1
A0
1000pF
+15V
-15V
GND V-
DG506A
D
V+
VO
A3
LOGIC
INPUT
(NOTE 1)
EN
A2S1A, S1B
A1
A0
1000pF
+15V
-15V
GND V-
DG507A
DA OR DB
V+
VO
LOGIC
INPUT
(NOTE 2)
3V
EN
0
VO∆VO
∆VO is the measured voltage error due to charge injection.
The error voltage in Coulombs is Q = CL x ∆VO.
10-49
DG506A, DG507A, DG508A, DG509A
Truth Tables
DG506A
A3A2A1A0EN ON SWITCH
XXXX0 None
00001 1
00011 2
00101 3
00111 4
01001 5
01011 6
01101 7
01111 8
10001 9
10011 10
10101 11
10111 12
11001 13
11011 14
11101 15
11111 16
Logic “0” = VAL,V
ENL ≤0.8V, Logic “1” = VAH,V
ENH ≥2.4V.
DG508A
A2A1A0EN ON SWITCH
X X X 0 None
0001 1
0011 2
0101 3
0111 4
1001 5
1011 6
1101 7
1111 8
A
0
, A1, A2, EN
Logic “1” = VAH ≥2.4V, Logic “0” = VAL ≤0.8V
DG507A
A2A1A0EN ON SWITCH
X X X 0 None
0001 1
0011 2
0101 3
0111 4
1001 5
1011 6
1101 7
1111 8
Logic “0” = VAL, VENL ≤0.8V, Logic “1” = VAH, VENH ≥2.4V.
DG509A
A1A0EN ON SWITCH
X X 0 None
0 0 1 1A, 1B
0 1 1 2A, 2B
1 0 1 3A, 3B
1 1 1 4A, 4B
A0, A1, EN
Logic “1” = VAH ≥2.4V, Logic “0” = VAL ≤0.8V
10-50
DG506A
Die Characteristics
DIE DIMENSIONS:
3810µm x 2770µm
METALLIZATION:
Type: Al
Thickness: 10kű1kÅ
GLASSIVATION:
Type: PSG/Nitride
Thickness: PSG: 7kű 1.4kÅ, Nitride: 8kű 1.2kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
DG506A
NC NC V+ D V-
S8
S7
S6
S5
S4
S3
S2
S1
GND NC A3A2A1A0EN
S16
S15
S14
S13
S12
S11
S10
S9
10-51
DG507A
Die Characteristics
DIE DIMENSIONS:
3810µm x 2770µm
METALLIZATION:
Type: Al
Thickness: 10kű1kÅ
GLASSIVATION:
Type: PSG/Nitride
Thickness: PSG: 7kű 1.4kÅ, Nitride: 8kű 1.2kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
DG507A
NC DBV+ DAV-
S8A
S7A
S6A
S5A
S4A
S3A
S2A
S1A
GND NC NC A2A1A0EN
S8B
S7B
S6B
S5B
S4B
S3B
S2B
S1B
10-52
DG508A
Die Characteristics
DIE DIMENSIONS:
3100µm x 2083µm
METALLIZATION:
Type: Al
Thickness: 10kű1kÅ
GLASSIVATION:
Type: PSG/Nitride
Thickness: PSG: 7kű 1.4kÅ, Nitride: 8kű 1.2kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
DG508A
EN A0A1A2
GND
V+
S5
S6
S7
S4DS
8
V-
S1
S2
S3
10-53
DG509A
Die Characteristics
DIE DIMENSIONS:
3100µm x 2083µm
METALLIZATION:
Type: Al
Thickness: 10kű1kÅ
GLASSIVATION:
Type: PSG/Nitride
Thickness: PSG: 7kű 1.4kÅ, Nitride: 8kű 1.2kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
DG509A
EN A0A1GND
V+
S1B
S2B
S3B
S4B
S4A DADB
V-
S1A
S2A
S3A
