APM4953K Dual P-Channel Enhancement Mode MOSFET Pin Description Features * D1 D1 D2 D2 -30V/-4.9A , RDS(ON)=53m(typ.) @ VGS=-10V RDS(ON)=80m(typ.) @ VGS=-4.5V * * * S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant) (1) S1 (3) S2 Applications * (2) G1 (4) G2 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D1 (7) D1 (8) D2 (5) D2 (6) P-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM4953 Assembly Material Handling Code Temperature Range Package Code APM4953 K : APM4953 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 1 www.anpec.com.tw APM4953K Absolute Maximum Ratings Symbol (TA = 25C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage 25 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature V -4.9 VGS=-10V A -20 -2 A 150 TSTG Storage Temperature Range PD* Power Dissipation for Single Operation C -55 to 150 TA=25C 2 TA=100C 0.8 Thermal Resistance-Junction to Ambient RJA* Unit W 62.5 C/W Note: *Surface Mounted on 1in pad area, t 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) Test Conditions APM4953K Min. Typ. Max. VGS=0V, IDS=250A -30 - - VDS=-24V, VGS=0V - - -1 - - -30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VSD a A Gate Threshold Voltage VDS=VGS, IDS=250A -1 -1.5 -2 V Gate Leakage Current VGS=25V, VDS=0V - - 100 nA VGS=-10V, IDS=-4.9A - 53 60 VGS=-4.5V, IDS=-3.6A - 80 95 ISD=-1.7A, VGS=0V - -0.8 -1.3 - 11.6 16 - 1.3 - - 2.5 - Drain-Source On-state Resistance Diode Forward Voltage Gate Charge Characteristics Qg TJ=85C V m V b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 VDS=-15V, VGS=-10V, IDS=-4.9A 2 nC www.anpec.com.tw APM4953K Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25C unless otherwise noted) Test Conditions APM4953K Unit Min. Typ. Max. - 8 - - 625 - - 100 - - 60 - - 6 12 - 12 23 - 25 46 - 6 12 - 14 - ns - 5 - nC b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-15V, RL=15, IDS=-1A, VGEN=-10V, RG=6 Turn-off Fall Time IDS=-4.9A, dlSD/dt=100A/s pF ns Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 3 www.anpec.com.tw APM4953K Typical Operating Characteristics Drain Current Power Dissipation 2.5 6.0 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 4.5 3.0 1.5 0.5 o TA=25 C,VG=-10V o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance 10 Normalized Transient Thermal Resistance Rd s(o n) Lim it 100 -ID - Drain Current (A) 0 300s 1ms 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 2 Mounted on 1in pad o RJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4953K Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 20 120 VGS= -5, -6, -7, -8, -9, -10V 18 RDS(ON) - On - Resistance (m) -4V 16 -ID - Drain Current (A) 110 14 12 10 8 -3V 6 4 -2V VGS= -4.5V 90 80 70 60 VGS= -10V 50 40 30 2 0 100 20 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 160 1.8 IDS = -250A ID=4.9A 1.6 Normalized Threshold Voltage RDS(ON) - On - Resistance (m) 140 120 100 80 60 40 20 1.4 1.2 1.0 0.8 0.6 0.4 1 2 3 4 5 6 7 8 9 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 5 www.anpec.com.tw APM4953K Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 2.00 VGS = -10V IDS = -4.9A 10 o Tj=150 C 1.50 -IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 53m 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 75 100 125 150 Tj - Junction Temperature (C) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge 10 900 Frequency=1MHz 9 -VGS - Gate-source Voltage (V) 800 C - Capacitance (pF) 700 Ciss 600 500 400 300 200 Coss 100 VD= -10V ID= -4.9A 8 7 6 5 4 3 2 1 Crss 0 0 5 10 15 20 25 0 0 30 4 6 8 10 12 QG - Gate Charge (nC) -VDS - Drain-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 2 6 www.anpec.com.tw APM4953K Package Information SOP-8 D E E1 SEE VIEW A h X 45 c A 0.25 b GAUGE PLANE SEATING PLANE A1 A2 e L VIEW A S Y M B O L SOP-8 MILLIMETERS MIN. INCHES MAX. A MIN. MAX. 1.75 0.069 0.004 0.25 0.010 A1 0.10 A2 1.25 b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 e 0.049 1.27 BSC 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0 8 0 8 Note: 1. Follow JEDEC MS-012 AA. 2. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension "E" does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 7 www.anpec.com.tw APM4953K Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A 330.0 2.00 P0 SOP-8 4.00.10 H T1 C d D W E1 F 12.4+2.00 13.0+0.50 0.05 50 MIN. 1.5 MIN. 20.2 MIN. 12.00.30 1.750.10 5.5 -0.00 -0.20 P1 P2 D0 D1 T A0 B0 K0 1.5+0.10 0.6+0.00 8.00.10 2.00.05 6.400.20 5.200.20 2.100.20 1.5 MIN. -0.00 -0.40 (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 2500 Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 8 www.anpec.com.tw APM4953K Taping Direction Information SOP-8 USER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone TL to TP Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Time Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 9 Description 245C, 5 sec 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles www.anpec.com.tw APM4953K Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 217C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Note: All temperatures refer to topside of the package. Measured on the body surface. Table 1. SnPb Eutectic Process - Package Peak Reflow Temperatures 3 Package Thickness Volume mm <350 <2.5 mm 2.5 mm 240 +0/-5C 225 +0/-5C Volume mm 350 3 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures Package Thickness Volume mm <350 3 Volume mm 350-2000 3 Volume mm >2000 3 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. B.3 - Jan., 2009 10 www.anpec.com.tw