Dual P-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
APM4953K
Features
Applications
• -30V/-4.9A ,
RDS(ON)=53mΩ(typ.) @ VGS=-10V
RDS(ON)=80mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
Ordering and Marking Information
P-Channel MOSFET
Top View of SOP−8
S1
G1
S2
G2
D1D1D2D2
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
D1
G1
S1
D1
(2)
(1)
(7) (8) D2
G2
S2
D2
(4)
(3)
(5) (6)
APM4953
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4953 K : APM4953
XXXXX XXXXX - Date Code
Assembly Material
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw2
APM4953K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter Rating Unit
VDSS Drain-Source Voltage -30
VGSS Gate-Source Voltage ±25 V
ID* Continuous Drain Current -4.9
IDM* Pulsed Drain Current VGS=-10V -20 A
IS* Diode Continuous Forward Current -2 A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 2
PD* Power Dissipation for Single Operation TA=100°C 0.8 W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
APM4953K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA -30 - - V
VDS=-24V, VGS=0V - - -1
IDSS Zero Gate Voltage Drain Current
TJ=85°C
- - -30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA -1 -1.5
-2 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100
nA
VGS=-10V, IDS=-4.9A - 53 60
RDS(ON) a
Drain-Source On-state Resistance VGS=-4.5V, IDS=-3.6A - 80 95 mΩ
VSDa Diode Forward Voltage ISD=-1.7A, VGS=0V - -0.8
-1.3
V
Gate Charge Characteristics b
Qg Total Gate Charge - 11.6
16
Qgs Gate-Source Charge - 1.3 -
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-4.9A - 2.5 -
nC
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw3
APM4953K
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM4953K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Dynamic Characteristics b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz
- 8 - Ω
Ciss Input Capacitance - 625
-
Coss Output Capacitance - 100
-
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz - 60 -
pF
td(ON) Turn-on Delay Time - 6 12
tr Turn-on Rise Time - 12 23
td(OFF) Turn-off Delay Time - 25 46
tf Turn-off Fall Time
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω - 6 12
ns
trr
Reverse Recovery Time - 14 - ns
Qrr
Reverse Recovery Charge IDS=-4.9A,
dlSD/dt=100A/µs - 5 - nC
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw4
APM4953K
1E-4 1E-3 0.01 0.1 110 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Operating Characteristics
-ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
-VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
TA=25oC
020 40 60 80 100 120 140 160
0.0
1.5
3.0
4.5
6.0
TA=25oC,VG=-10V
0.01 0.1 110 100
0.01
0.1
1
10
100
300µs
Rds(on) Limit
1s
TA=25oC
10ms
1ms
100ms
DC
Normalized Transient Thermal Resistance
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw5
APM4953K
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
-ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
Normalized Threshold Voltage
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Output Characteristics
Drain-Source On Resistance
-VGS - Gate - Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
Typical Operating Characteristics (Cont.)
0 1 2 3 4 5 6 7 8
0
2
4
6
8
10
12
14
16
18
20
-4V
-2V
-3V
VGS= -5, -6, -7, -8, -9, -10V
0246810 12 14 16 18 20
20
30
40
50
60
70
80
90
100
110
120
VGS= -4.5V
VGS= -10V
-50 -25 025 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 IDS = -250µA
1 2 3 4 5 6 7 8 9 10
20
40
60
80
100
120
140
160
ID=4.9A
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw6
APM4953K
-VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward
-IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
-VGS - Gate-source Voltage (V)
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
RON@Tj=25oC: 53mΩ
VGS = -10V
IDS = -4.9A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1
10
20
Tj=150oC
Tj=25oC
0 5 10 15 20 25 30
0
100
200
300
400
500
600
700
800
900
Frequency=1MHz
Crss
Coss
Ciss
0 2 4 6 8 10 12
0
1
2
3
4
5
6
7
8
9
10 VD= -10V
ID= -4.9A
Typical Operating Characteristics (Cont.)
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw7
APM4953K
Package Information
SOP-8
S
Y
M
B
O
LMIN. MAX.
1.75
0.10
0.17 0.25
0.25
A
A1
c
D
E
E1
e
h
L
MILLIMETERS
b0.31 0.51
SOP-8
0.25 0.50
0.40 1.27
MIN. MAX.
INCHES
0.069
0.004
0.012 0.020
0.007 0.010
0.010 0.020
0.016 0.050
0
0.010
1.27 BSC 0.050 BSC
A2 1.25 0.049
0
°
8
°
0
°
8
°
D
e
E
E1
SEE VIEW A
cb
h X 45
°
A
A1A2
L
VIEW A
0.25
SEATING PLANE
GAUGE PLANE
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
3.80
5.80
4.80
4.00
6.20
5.00 0.189 0.197
0.228 0.244
0.150 0.157
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw8
APM4953K
Application
A H T1 C d D W E1 F
330.0±
2.00 50 MIN.
12.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
12.0±0.30
1.75±0.10
5.5±0.05
P0 P1 P2 D0 D1 T A0 B0 K0
SOP-8
4.0±0.10
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
6.40±0.20
5.20±0.20
2.10±0.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
A
B
W
F
T
P0
OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Devices Per Unit
Package Type Unit Quantity
SOP-8 Tape & Reel 2500
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw9
APM4953K
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles
Reflow Condition (IR/Convection or VPR Reflow)
Reliability Test Program
t 25 C to Peak
tp
Ramp-up
tL
Ramp-down
ts
Preheat
Tsmax
Tsmin
TL
TP
25
Temperature
Time
Critical Zone
TL to TP
°
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Copyright ANPEC Electronics Corp.
Rev. B.3 - Jan., 2009 www.anpec.com.tw10
APM4953K
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
(TL to TP) 3°C/second max. 3°C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL) 183°C
60-150 seconds 217°C
60-150 seconds
Peak/Classification Temperature (Tp)
See table 1 See table 2
Time within 5°C of actual
Peak Temperature (tp) 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
Package Thickness Volume mm3
<350 Volume mm3
≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Classification Reflow Profiles
