ZXMP4A16GQ
Document Number DS37732 Rev. 1 - 2
1 of 7
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February 2015
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ZXMP4A16GQ
ADVANCE INFO R MA T I O N
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
-40V
60mΩ @ VGS= -10V
100mΩ @ VGS= -4.5V
Description and Applications
This new generation of Trench MOSFETs utilizes a unique structure
that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, and
power management applications.
DC-DC Converters
Disconnect Switches
Audio Output Stages
Motor Control
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 5)
Product
Case
Packaging
ZXMP4A16GQTA
SOT223
1,000/Tape & Reel
ZXMP4A16GQTC
SOT223
4,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pin Out - Top View
Top View
SOT223
Equivalent Circuit
D
S
G
ZXMP
4A16
YWW
ZXMP4A16 = Product Type Marking Code
YWW = Date Code Marking
Y = Year (ex: 4 = 2014)
WW = Week (01 - 53)
ZXMP4A16GQ
Document Number DS37732 Rev. 1 - 2
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ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current
VGS = 10V
(Note 7)
ID
-6.4
A
TA = +70°C (Note 7)
-4.6
(Note 6)
-1.7
Pulsed Drain Current
VGS= 10V
(Note 8)
IDM
-21
A
Continuous Source Current (Body diode)
(Note 7)
IS
-5.2
A
Pulsed Source Current (Body diode)
(Note 8)
ISM
-21
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 6)
PD
2.0
16
W
mW/°C
(Note 7)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 6)
RJA
62.5
°C/W
(Note 7)
32.2
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-40
V
ID = -250µA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS= -40V, VGS= 0V
Gate-Source Leakage
IGSS
100
nA
VGS= 20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
V
ID= -250µA, VDS= VGS
Static Drain-Source On-Resistance (Note 9)
RDS (ON)
0.060
Ω
VGS= -10V, ID= -3.8A
0.100
VGS= -4.5V, ID= -2.9A
Forward Transconductance (Notes 9 & 11)
gfs
8.85
S
VDS= -15V, ID= -3.8A
Diode Forward Voltage (Note 9)
VSD
-0.85
-1.2
V
TJ = 25°C , IS= -3.4A, VGS= 0V
Reverse Recovery Time (Note 11)
trr
27.2
ns
TJ = +25°C , IF= -3A, di/dt=
100A/µs
Reverse Recovery Charge (Note 11)
Qrr
25.4
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Ciss
1007
pF
VDS= -20V, VGS= 0V
f= 1MHz
Output Capacitance
Coss
130
pF
Reverse Transfer Capacitance
Crss
85
pF
Total Gate Charge (Note 10)
Qg

13.6

nC
VGS= -5V
VDS= -20V
ID= -3.8A
Total Gate Charge (Note 10)
Qg
26.1
nC
VGS= -10V
Gate-Source Charge (Note 10)
Qgs
2.8
nC
Gate-Drain Charge (Note 10)
Qgd
4.8
nC
Turn-On Delay Time (Note 10)
tD(on)
3.0
ns
VDD= -20V, VGS= -10V,
ID= -1A, RG 6.0Ω
Turn-On Rise Time (Note 10)
tr
3.5
ns
Turn-Off Delay Time (Note 10)
tD(off)
13.4
ns
Turn-Off Fall Time (Note 10)
tf
7.2
ns
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For a device surface mounted on FR4 PCB measured at t 10 seconds.
8. For a device surface mounted on 25mm x 25mm FR4 PCB, D= 0.05 pulse width limited by maximum junction temperature.
9. Measured under pulsed conditions. Width 300µs. Duty cycle 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXMP4A16GQ
Document Number DS37732 Rev. 1 - 2
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ZXMP4A16GQ
ADVANCE INFO R MA T I O N
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ZXMP4A16GQ
Document Number DS37732 Rev. 1 - 2
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ZXMP4A16GQ
Document Number DS37732 Rev. 1 - 2
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Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
X1
Y1
Y
XC
C1 Y2
ZXMP4A16GQ
Document Number DS37732 Rev. 1 - 2
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February 2015
© Diodes Incorporated
ZXMP4A16GQ
ADVANCE INFO R MA T I O N
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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