Data Sheet 1 2000-07-01
Double Differential Magneto Resistor FP 425 L 90
Version 2.0
Dimensions in mm
GPX06897
1
2
3
4
5
6
E
/ /
E
0.4
0.55
0.45
3.3
3.1
2.06
1.86
0.396
0.390
2)
3)
3)
A
0.2 A
0.789
0.783
C
0.04
Incl. lacquer-cover
C
B
B
1...6 pin connection
<-0.1
(0.33)
0.045
0.025
(0.13)
0.2 max.
0.2 max.
0.55
0.45
2.76
2.96
B
0.2
0.04 D
4.2
3.75
3.55
4.0
D B
1)
Punching-
points
5.55
5.45
6.0
6.2
(0.8)
0.65
0.55
1.1
1.2
1.1 1.2
2-3
3
R
2
1-2
R
1
6
R
5-6
5
R
4-5
4
Center-distance between the Diff.-Systems.
6 fingers on both sides free of lacquer
seperate at punching-points.
3)
2)
If delivery as tape,
Approx. weight 0.2 g
1)
Features
Double differential magneto resistor on one carrier
Accurate intercenter spacing
High operating temperature range
High output voltage
Compact construction
Available in strip form for automatic assembly
Optimized intercenter spacing on modules
m= 0.5 mm
Reduced temperature dependence of offset
voltage
Typical Applications
Incremental angular encoders
Detection of sense of rotation
Detection of speed
Detection of position
Data Sheet 2 2000-07-01
FP 425 L 90
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a silicon substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as TAB.
The basic resistance of each of the magneto resistors is 90 . The two series coupled
pairs of magneto resistor are actuated by an external magnetic field or can be biased by
a permanent magnet and actuated by a soft iron target.
Type Ordering Code
FP 425 L 90 Q65425-L90 (singular)
FP 425 L 90 Q65425-L0090E001 (taped)
Data Sheet 3 2000-07-01
FP 425 L 90
Absolute Maximum Ratings
Electrical Characteristics (TA = 25 °C)
Parameter Symbol Limit Values Unit
Operating temperature TA– 40 / + 175 °C
Storage temperature Tstg – 40 / + 185 °C
Power dissipation1) Ptot 800 mW
Supply voltage (B = 0.2 T, TA = 25 °C) VIN 8V
Thermal conductivity
attached to heatsink
in still air Gthcase
GthA
20
2mW/K
mW/K
Nominal supply voltage (B = 0.2 T)2) VINN 5V
Basic resistance
(I < 1 mA, B = 0 T) R01-3 160 – 280
Center symmetry3) M 3%
Relative resistance change
(R0 = R01-3,R04-6 at B = 0 T)
B = ± 0.3 T4)
B = ± 1 T
RB/R0
> 1.7
> 7
Temperature coefficient
B = 0 T
B = ± 0.3 T
B = ± 1 T
TCR– 0.16
– 0.38
– 0.54
%/K
%/K
%/K
1) T = Tcase
2) T = Tcase, T < 80 °C
3)
4) 1 T = 1 Tesla = 104 Gauss
MR01 2R02 3
R01 2
--------------------------------=× 100% for R01-2 > R02-3
MR04 5R05 6
R04 5
--------------------------------=× 100% for R04-5 > R05-6
Data Sheet 4 2000-07-01
FP 425 L 90
Max. power dissipation versus
temperature
Ptot = f(T), T = Tcase,TA
Typical MR resistance
versus temperature
R01-3, 4-6 = f(TA), B = Parameter
Maximum supply voltage
versus temperature
VIN = f(T), B = 0.2 T
Typical MR resistance
versus magnetic induction B
R01-3, 4-6 = f(B), TA = 25 °C