1Nov-24-1997
BSM 150 GAR 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type VCE ICPackage Ordering Code
BSM 150 GAR 120 DN2 1200V210AHALF BRIDGE GAR 2 C67076-A2013-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE = 20 kΩVCGR 1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
150
210 A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
300
420
Power dissipation per IGBT
TC = 25 °C Ptot 1250 W
Chip temperature Tj+ 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ≤ 0.1 K/W
Diode thermal resistance, chip case RthJCD≤ 0.25
Diode thermal resistance, chip-case,chopper RTHJCDC ≤ 0.18
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 -F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
2Nov-24-1997
BSM 150 GAR 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 6 mA VGE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
VGE = 15 V, IC = 150 A, Tj = 25 °C
VGE = 15 V, IC = 150 A, Tj = 125 °C
VCE(sat)
-
- 3.1
2.5 3.7
3
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
- 8
2 -
2.8 mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V IGES - - 400 nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 150 A gfs 62 --S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 11 -nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 1.6 -
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 0.6 -
3Nov-24-1997
BSM 150 GAR 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
td(on)
- 200 400
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
tr
- 100 200
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
td(off)
- 600 800
Fall time
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
tf
- 70 100
Free-Wheel Diode
Diode forward voltage
IF = 150 A, VGE = 0 V, Tj = 25 °C
IF = 150 A, VGE = 0 V, Tj = 125 °C
VF
-
- 1.8
2 -
2.5 V
Reverse recovery time
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs, Tj = 125 °C
trr
- 0.4 -
µs
Reverse recovery charge
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
- 18
5 -
-
µC
4Nov-24-1997
BSM 150 GAR 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Chopper Diode
Chopper diode forward voltage
IFC = 200 A, VGE = 0 V, Tj = 25 °C
IFC = 200 A, VGE = 0 V, Tj = 125 °C
VFC
-
- 1.8
2 -
2.5 V
Reverse recovery time, chopper
IFC = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C
trrC
- 0.5 -
µs
Reverse recovery charge, chopper
IFC = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs
Tj = 25 °C
Tj = 125 °C
QrrC
-
- 36
12 -
-
µC
GAL type
GAR type
PIN 6 and 7
GAL type
only
PIN 4 and 5
GAR type
only
IGBT-Module
IGBT-Modules %60*$/'1%60*$5'1
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
Update of Drawing S ep-21- 98
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM150GAR120DN2
typ.
LsCE 20 nH
TC=25°C RCC‘+EE‘ 0,7 mΩ
Modulinduktivität
stray inductance module
Modul Leitungswiderstand,
A
nschlüsse – Chip
module lead resistance,
terminals – chip
Anhang C-Serie
Appendix C-series
Gehäuse spezifische Werte
Housing specific values
Gehäusemaße C-Serie
Package outline C-series
Appendix C-series Appendix_C-Serie_BSM150GAR120DN2
2001-09-20
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