MCL4148
SMALL SIGNAL
SWITCHING DIODES
Features
Mechanical Data
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the DO-35 case with
the type designation 1N4148
· Case: Mini-MELF glass case(DO-35)
· Weight: Approx. 0.05 gram
Maximum Ratings And Electrical Characteristics
Electrical characteristics
(Ratings at 25 ambient temperature unless otherwise specified)
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Average rectified current, Half wave rectification with
Resistive load at T
A
=25 and F50Hz mA150
1)
Surge forward current at t<1S and T
J
=25
-65 to +175
Storage temperature range
Reverse Voltage Volts75
V
R
I
AV
I
FSM 500
T
STG
Junction temperature
T
J175
mA
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Peak Reverse Voltage Volts100
V
RM
Power dissipation at T
A
=25mW
500
1)
Ptot
Symbols Units
Leakage current  at V
R
=20V
at V
R
=75V
at V
R
=20V, T
J
=150
Junction Capacitance at V
R
=V
F
=0V
I
R
I
R
I
R
C
J
Min.
Thermal resistance, junction to Ambient
Typ. Max.
25
5
50
4
350
1)
K/W
Forward voltage Volts1
V
F
Rθ
JA
pF
Reverse Recovery time from I
F
=10mA to I
R
=1mA,
V
R
=6V, R
L
=100Ω4 ns
trr
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Voltage rise when switching ON tested with 50mA
pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz Volts2.5
V
fr
Rectification efficiency at f=100MHz, V
RF
=2V 0.45
η
Dimensions in inches and (millimeters)
MELF
0.079(2.00)
0.071(1.80)
0.008(0.20)
SOLDERABLE ENDS
0.043(1.10)
MICRO
nA
μA
μA
FIG.1-FORWARD CHARACTERISTICS
TJ=25
TJ=100
10 2V
IF
VF
mA
1
10-
1
10-
2
10
2
10
3
10
FIG.2-DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
r
f
IF
TJ= 25
f=1KHz
110-
1
10-
2
10
2
10
10
3
1
10
2
10
4
10
mA
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
1000 200
TA
Ptot
0
100
300
200
1000
900
800
700
600
500
400
mW
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
TJ= 25
f=1MHz
20 10V864
0.7
0.8
1.0
0.9
1.1
VR
Ctot(VR)
Ctot(OV)
RATINGS AND CHARACTERISTIC CURVES MCL4148
Ω
FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT
CIRCUIT
VO
5K
2nF
VRF=2V
D.U.T.
60
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
1000 200
nA
10
3
1
10
2
10
4
10
VR= 20V
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
tp
110-
1
10-
2
10S10-3
10-5 10-4
0.1
1
100
10
I
FRM
A
V=tp/T T=1/fp
tp I
FRM
T
n=0
0.1
0.5
0.2
RATINGS AND CHARACTERISTIC CURVES MCL4148
Ω
Ω