Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
FET1
FET2
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
±20
V
Continuous Drain Current (1)
TC=25oC (Silicon Limited)
ID
52
95
A
TC=25oC (Package Limited)
34
40
TA=25oC
13
21
Pulsed Drain Current
IDM
40
100
A
Power Dissipation
TC=25oC
PD
35.7
44.6
TA=25oC
2.2
2.5
Single Pulse Avalanche Energy (2)
EAS
60
60
Junction and Storage Temperature Range
TJ, Tstg
-55~150
Thermal Characteristics
Characteristics
Symbol
FET1
FET2
Unit
Thermal Resistance, Junction-to-Ambient (1)
RθJA
57
50
oC/W
Thermal Resistance, Junction-to-Case
RθJC
3.5
2.8
MDU5593S
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5593S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU5593S is suitable for DC/DC converter and
general purpose applications.
Features
FET1 FET2
VDS = 30V VDS = 30V
ID = 34A ID = 40A @VGS = 10V
RDS(ON)
< 8.0mΩ < 3.3mΩ @VGS = 10V
< 11.0mΩ < 5.0mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5
6
7
8
4
3
2
1
G1
D1
D1
D1
G2
S2
S2
S2
1
S1/D2
2
3
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDU5593SVRH
-55~150oC
Dual PDFN56
Tape & Reel
Halogen Free
FET1 Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.0
1.8
3.0
Drain Cut-Off Current
IDSS
VDS = 24V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 13A
-
5.1
8.0
mΩ
VGS = 4.5V, ID = 11A
-
7.2
11.0
Forward Transconductance
gfs
VDS = 5V, ID = 13A
-
35
-
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
VDS = 15.0V, ID = 10A,
VGS = 10V
-
18.0
-
nC
Total Gate Charge
Qg(4.5V)
-
9.5
-
Gate-Source Charge
Qgs
-
3.2
-
Gate-Drain Charge
Qgd
-
3.2
-
Input Capacitance
Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
-
1,142
-
pF
Output Capacitance
Coss
-
446
-
Reverse Transfer Capacitance
Crss
-
83
-
Turn-On Delay Time
td(on)
VDD=15V, ID=10A, Rg=3Ω
-
9.9
-
ns
Rise Time
tr
-
12.1
-
Turn-Off Delay Time
td(off)
-
28.5
-
Fall Time
tf
-
6.9
-
Gate Resistance
Rg
f=1 MHz
-
1.0
-
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 1A, VGS = 0V
-
0.7
1.0
V
Body Diode Reverse Recovery Time
trr
IF = 10A, dl/dt = 100A/μs
-
31.8
-
ns
Body Diode Reverse Recovery Charge
Qrr
-
29.4
-
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A.
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Area
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3 4 5 6 7 8 9 10
4
8
12
16
20
※ Notes :
ID = 13A
TJ = 25℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
10-1
100
101
TJ=25℃
※ Notes :
VGS = 0V
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
1 2 3 4 5
0
5
10
15
20
25
VGS, Gate-Source Voltage [V]
TJ=25℃
※ Notes :
VDS = 5V
ID, Drain Current [A]
-50 -25 025 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
※ Notes :
1. VGS = 10 V
2. ID = 13 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
10 20 30 40 50
4
5
6
7
8
9
VGS = 10V
VGS = 4.5V
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
0.0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
5.0V
3.5V
VGS = 10V 4.5V
8.0V 4.0V
3.0V
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
010 20 30
0
400
800
1200
1600 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [F]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50
60
Limited by Package
ID, Drain Current [A]
TC, Case Temperature [℃]
10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
101
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA
* Rθ JA
(t) + TA
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JA
, Normalized Thermal Response
t1, Rectangular Pulse Duration [sec]
0 5 10 15 20
0
2
4
6
8
10
※ Note : ID = 10A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101102
10-1
100
101
102
10 s
1 s
100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max Rated
TA=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
FET2 Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.3
1.8
3.0
Drain Cut-Off Current
IDSS
VDS = 24V, VGS = 0V
-
-
500
μA
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 27A
-
2.8
3.3
mΩ
VGS = 4.5V, ID = 21A
-
4.0
5.0
Forward Transconductance
gfs
VDS = 5V, ID = 21A
-
46
-
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
VDS = 15.0V, ID = 20A,
VGS = 10V
-
26.1
-
nC
Total Gate Charge
Qg(4.5V)
-
12.6
-
Gate-Source Charge
Qgs
-
4.5
-
Gate-Drain Charge
Qgd
-
4.2
-
Input Capacitance
Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
-
1785
-
pF
Output Capacitance
Coss
-
652
-
Reverse Transfer Capacitance
Crss
-
98
-
Turn-On Delay Time
td(on)
VDD=15V, ID=20A, Rg=6Ω
-
11.9
-
ns
Rise Time
tr
-
8.9
-
Turn-Off Delay Time
td(off)
-
45.5
-
Fall Time
tf
-
14.5
-
Gate Resistance
Rg
f=1 MHz
-
1.0
-
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 1.0A, VGS = 0V
-
0.4
0.7
V
Body Diode Reverse Recovery Time
trr
IF = 27A, dl/dt = 150A/μs
-
33.2
-
ns
Body Diode Reverse Recovery Charge
Qrr
-
28.5
-
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A.
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Area
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
1 2 3 4
0
5
10
15
20
25
VGS, Gate-Source Voltage [V]
TJ=25℃
※ Notes :
VDS = 5V
ID, Drain Current [A]
-50 -25 025 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
※ Notes :
1. VGS = 10 V
2. ID = 21 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
10 20 30 40 50
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS = 10V
VGS = 4.5V
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
2 3 4 5 6 7 8 9 10
0
2
4
6
8
10
12
14
16
18
20
※ Notes :
ID = 21A
TJ = 25℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
10-1
100
101
TJ=25℃
※ Notes :
VGS = 0V
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
3.5V
VGS = 10V
4.5V
4.0V
3.0V
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
010 20 30
0
1000
2000
3000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Ciss
Capacitance [F]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
20
40
60
80
100
Limited by Package
ID, Drain Current [A]
TC, Case Temperature [℃]
10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
101
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA
* Rθ JA
(t) + TA
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JA
, Normalized Thermal Response
t1, Rectangular Pulse Duration [sec]
010 20 30
0
2
4
6
8
10
※ Note : ID = 20A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-2 10-1 100101102
10-1
100
101
102
10 s
1 s
100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max Rated
TA=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
Package Dimension
Dimensions are in millimeters, unless otherwise specified
Dual PDFN56 (5x6mm)
Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.
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MDU5593S - Dual N-Channel Trench MOSFET 30V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.