MMBT3646 MMBT3646 Switching Transistor 3 2 SOT-23 Mark: 23 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 15 Units V VCES Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage IC Collector Current (DC) - Continuous 300 mA PD Total Device Dissipation - Derate above 25C @ TA=25C 625 5 mW mW/C TJ, TSTG Operating and Storage Junction Temperature Range 150 C 5 Electrical Characteristics TC=25C unless otherwise noted Symbol Off Characteristics Parameter Min. Typ. Max. Units V(BR)CES Collector-Emitter Breakdown Voltage (IC = 100Adc, VBE = 0) 40 V VCEO(SUS) Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0) 15 V V V(BR)CBO Collector-Base Breakdown Voltage (IC = 100Adc, IE = 0) 40 V(BR)EBO Emitter-Base Breakdown Voltage (IE = 100Adc, IC = 0) 5 ICES Collector Cut-off Current (VCE = 20Vdc, VBE = 0) (VCE = 20Vdc, VBE = 0, TA = 65C) V 0.5 3 A On Characteristics (1) hFE DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc) (IC = 100mAdc, VCE = 0.5Vdc) (IC = 300mAdc, VCE = 1Vdc) VCE(sat) Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) (IC = 100mAdc, IB = 10mAdc) (IC = 300mAdc, IB = 30mAdc) (IC = 30mA, IB = 3mA, TA =65C) VBE(sat) Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) (IC = 100mAdc, IB = 10mAdc) (IC = 300mAdc, IB = 30mAdc) (c)2001 Fairchild Semiconductor Corporation 30 25 15 0.73 120 0.2 0.28 0.5 0.3 V 0.95 1.2 1.7 V Rev. A, August 2001 Symbol Small-Signal Characteristics Parameter Min. Typ. Max. Units Cobo Output Capacitance (VCE = 5Vdc, IE = 0, f = 1MHz) 5 pF Cibo Input Capacitance (VEB = 0.5Vdc, IC = 0, f = 1MHz) 8 pF 18 ns 10 ns Switching Characteristics ton Turn-On Time td Delay Time tr Rise Time toff Turn-Off Time tf Fall Time ts Storge Time VCC = 10Vdc, IC = 300mAdc, IB1 = 30mAdc, VCE(off) = 3V VCC = 10Vdc, IC = 300mAdc, IB1 = IB2 = 30mAdc 15 ns 28 ns 15 ns 20 ns Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction to Ambient RJC Thermal Resistance, Junction to Case (c)2001 Fairchild Semiconductor Corporation Min. Typ. Max. 200 Units C 83.3 C Rev. A, August 2001 MMBT3646 Electrical Characteristics TC=25C unless otherwise noted) (Continued) MMBT3646 Package Demensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H4